Transparent conducting oxide development for electronics applications

We have employed both combinatorial composition spread and conventional single composition approaches to determine the relative roles of metals and oxygen stoichiometries on the opto-electronic properties of amorphous In-Zn-O (a-IZO) thin film transparent conductors. Two major results were found. Fi...

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Hauptverfasser: Perkins, J.D., Berry, J. J., van Hest, M.F.A.M., Cavendor, A.N., Leenheer, A.J., O'Hayre, R.P., Ginley, D.S.
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creator Perkins, J.D.
Berry, J. J.
van Hest, M.F.A.M.
Cavendor, A.N.
Leenheer, A.J.
O'Hayre, R.P.
Ginley, D.S.
description We have employed both combinatorial composition spread and conventional single composition approaches to determine the relative roles of metals and oxygen stoichiometries on the opto-electronic properties of amorphous In-Zn-O (a-IZO) thin film transparent conductors. Two major results were found. First, that the optimization of conductivity in a-IZO is a coupled process with the best metals composition depending upon the oxygen content of the sputter gas. Second, that the electron mobility as a function of carrier concentration is given by a common curve for all a-IZO films independent of the metals composition.
doi_str_mv 10.1109/ISAF.2008.4693955
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(NREL), Golden, CO (United States)</aucorp><format>book</format><genre>proceeding</genre><ristype>CONF</ristype><atitle>Transparent conducting oxide development for electronics applications</atitle><btitle>2008 17th IEEE International Symposium on the Applications of Ferroelectrics</btitle><stitle>ISAF</stitle><date>2008-02</date><risdate>2008</risdate><volume>1</volume><spage>1</spage><epage>2</epage><pages>1-2</pages><issn>1099-4734</issn><eissn>2375-0448</eissn><isbn>9781424427444</isbn><isbn>1424427444</isbn><eisbn>9781424427451</eisbn><eisbn>1424427452</eisbn><abstract>We have employed both combinatorial composition spread and conventional single composition approaches to determine the relative roles of metals and oxygen stoichiometries on the opto-electronic properties of amorphous In-Zn-O (a-IZO) thin film transparent conductors. Two major results were found. First, that the optimization of conductivity in a-IZO is a coupled process with the best metals composition depending upon the oxygen content of the sputter gas. Second, that the electron mobility as a function of carrier concentration is given by a common curve for all a-IZO films independent of the metals composition.</abstract><cop>United States</cop><pub>IEEE</pub><doi>10.1109/ISAF.2008.4693955</doi><tpages>2</tpages></addata></record>
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identifier ISSN: 1099-4734
ispartof 2008 17th IEEE International Symposium on the Applications of Ferroelectrics, 2008, Vol.1, p.1-2
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source IEEE Electronic Library (IEL) Conference Proceedings
subjects Amorphous materials
Conductive films
Conductivity
Electrical resistance measurement
Electromagnetic wave absorption
ELECTRON MOBILITY
Indium
MATERIALS SCIENCE
Optical reflection
OPTIMIZATION
OXIDES
OXYGEN
SOLAR ENERGY
Solar Energy - Photovoltaics
Sputtering
Substrates
THIN FILMS
Zinc oxide
title Transparent conducting oxide development for electronics applications
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