Parasitic resistance and leakage reduction by raised source / drain extention fabricated with cluster ion implantation and millisecond annealing

We designed and fabricated sub-30 nm gate length pMOSFETs developing the raised source/drain extension (RSDext) process. Our process features usages of cluster-ion (B 18 H 22 ) implantation and high-temperature millisecond annealing processes and a facet-structure-control of the RSDext of less than...

Ausführliche Beschreibung

Bibliographische Detailangaben

Hauptverfasser:	Yako, Koichi, Yamamoto, Toyoji, Uejima, Kazuya, Ikezawa, Takeo, Hane, Masami
Format:	Tagungsbericht
Sprache:	eng
Schlagworte:	Annealing Boron Electrical resistance measurement Ion implantation Large scale integration Metalworking machines MOSFETs National electric code Temperature Thermal resistance
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