Plasma doping control by mass metrology

We show that accurate mass metrology can determine how dopants are added or material is removed during the plasma doping process. In case of erosion, information of mass reduction rate and selectivity can be obtained. Although deposition and erosion can occur simultaneous with implantation, a method...

Ausführliche Beschreibung

Bibliographische Detailangaben

Hauptverfasser:	Everaert, J.L., Zschatzsch, G., Vecchio, G., Vandervorst, W., Cunnane, L.
Format:	Tagungsbericht
Sprache:	eng
Schlagworte:	Annealing Atmospheric measurements Metrology Plasma devices Plasma immersion ion implantation Plasma materials processing Plasma measurements Semiconductor device doping Sheet materials Weight control
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