ANN for noise estimation of microwave FETs from S-parameters
Measurements of microwave transistorspsila noise require complex and expensive equipment and can be time consuming. In this paper, we are proposing an application of artificial neural networks for fast estimation of noise parameters from the device scattering parameters. This method requires measure...
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| creator | Marinkovic, Z.D. Markovic, V.V. |
| description | Measurements of microwave transistorspsila noise require complex and expensive equipment and can be time consuming. In this paper, we are proposing an application of artificial neural networks for fast estimation of noise parameters from the device scattering parameters. This method requires measured values of the device noise parameters for the network training only. Once the network is trained noise parameters can be estimated from the scattering parameters without additional noise measurements. Devices working under different temperature conditions are considered. |
| doi_str_mv | 10.1109/NEUREL.2008.4685608 |
| format | Conference Proceeding |
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In this paper, we are proposing an application of artificial neural networks for fast estimation of noise parameters from the device scattering parameters. This method requires measured values of the device noise parameters for the network training only. Once the network is trained noise parameters can be estimated from the scattering parameters without additional noise measurements. Devices working under different temperature conditions are considered.</description><identifier>ISBN: 142442903X</identifier><identifier>ISBN: 9781424429035</identifier><identifier>EISBN: 1424429048</identifier><identifier>EISBN: 9781424429042</identifier><identifier>DOI: 10.1109/NEUREL.2008.4685608</identifier><identifier>LCCN: 2008935851</identifier><language>eng</language><publisher>IEEE</publisher><subject>Artificial neural networks ; Circuit noise ; Microwave devices ; Microwave FETs ; Microwave transistors ; Noise figure ; Noise measurement ; noise parameters ; Parameter estimation ; S-parameters ; Scattering parameters ; Semiconductor device noise</subject><ispartof>2008 9th Symposium on Neural Network Applications in Electrical Engineering, 2008, p.183-186</ispartof><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://ieeexplore.ieee.org/document/4685608$$EHTML$$P50$$Gieee$$H</linktohtml><link.rule.ids>310,311,781,785,790,791,2059,27930,54925</link.rule.ids><linktorsrc>$$Uhttps://ieeexplore.ieee.org/document/4685608$$EView_record_in_IEEE$$FView_record_in_$$GIEEE</linktorsrc></links><search><creatorcontrib>Marinkovic, Z.D.</creatorcontrib><creatorcontrib>Markovic, V.V.</creatorcontrib><title>ANN for noise estimation of microwave FETs from S-parameters</title><title>2008 9th Symposium on Neural Network Applications in Electrical Engineering</title><addtitle>NEUREL</addtitle><description>Measurements of microwave transistorspsila noise require complex and expensive equipment and can be time consuming. In this paper, we are proposing an application of artificial neural networks for fast estimation of noise parameters from the device scattering parameters. This method requires measured values of the device noise parameters for the network training only. Once the network is trained noise parameters can be estimated from the scattering parameters without additional noise measurements. Devices working under different temperature conditions are considered.</description><subject>Artificial neural networks</subject><subject>Circuit noise</subject><subject>Microwave devices</subject><subject>Microwave FETs</subject><subject>Microwave transistors</subject><subject>Noise figure</subject><subject>Noise measurement</subject><subject>noise parameters</subject><subject>Parameter estimation</subject><subject>S-parameters</subject><subject>Scattering parameters</subject><subject>Semiconductor device noise</subject><isbn>142442903X</isbn><isbn>9781424429035</isbn><isbn>1424429048</isbn><isbn>9781424429042</isbn><fulltext>true</fulltext><rsrctype>conference_proceeding</rsrctype><creationdate>2008</creationdate><recordtype>conference_proceeding</recordtype><sourceid>6IE</sourceid><sourceid>RIE</sourceid><recordid>eNpFj9tKAzEYhCNS0NY-QW_yAltz-HMCb0pZrbCsoBW8K-n2D0TcpiSL4tu7YsG5GQY-hhlCFpwtOWfutq1fn-tmKRizS9BWaWYvyJSDABCOgb38D_JtQqa_oJPKKn5F5qW8s1GgpLbimtyt2paGlOkxxYIUyxB7P8R0pCnQPnY5fflPpPf1ttCQU09fqpPPvscBc7khk-A_Cs7PPiPbEVxvqubp4XG9aqro2FAJKzWgdBZRMdgz03kN3gSJwnYW2AG088JIhdoLyQWTQu6DBqNNdzDo5Yws_mojIu5OeVyYv3fn5_IH0jNJaw</recordid><startdate>200809</startdate><enddate>200809</enddate><creator>Marinkovic, Z.D.</creator><creator>Markovic, V.V.</creator><general>IEEE</general><scope>6IE</scope><scope>6IL</scope><scope>CBEJK</scope><scope>RIE</scope><scope>RIL</scope></search><sort><creationdate>200809</creationdate><title>ANN for noise estimation of microwave FETs from S-parameters</title><author>Marinkovic, Z.D. ; Markovic, V.V.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-i90t-28364e398ee504b07ca64a7f3e28c840d469a2735e6a23120323bf64767cd7ea3</frbrgroupid><rsrctype>conference_proceedings</rsrctype><prefilter>conference_proceedings</prefilter><language>eng</language><creationdate>2008</creationdate><topic>Artificial neural networks</topic><topic>Circuit noise</topic><topic>Microwave devices</topic><topic>Microwave FETs</topic><topic>Microwave transistors</topic><topic>Noise figure</topic><topic>Noise measurement</topic><topic>noise parameters</topic><topic>Parameter estimation</topic><topic>S-parameters</topic><topic>Scattering parameters</topic><topic>Semiconductor device noise</topic><toplevel>online_resources</toplevel><creatorcontrib>Marinkovic, Z.D.</creatorcontrib><creatorcontrib>Markovic, V.V.</creatorcontrib><collection>IEEE Electronic Library (IEL) Conference Proceedings</collection><collection>IEEE Proceedings Order Plan All Online (POP All Online) 1998-present by volume</collection><collection>IEEE Xplore All Conference Proceedings</collection><collection>IEEE/IET Electronic Library (IEL)</collection><collection>IEEE Proceedings Order Plans (POP All) 1998-Present</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Marinkovic, Z.D.</au><au>Markovic, V.V.</au><format>book</format><genre>proceeding</genre><ristype>CONF</ristype><atitle>ANN for noise estimation of microwave FETs from S-parameters</atitle><btitle>2008 9th Symposium on Neural Network Applications in Electrical Engineering</btitle><stitle>NEUREL</stitle><date>2008-09</date><risdate>2008</risdate><spage>183</spage><epage>186</epage><pages>183-186</pages><isbn>142442903X</isbn><isbn>9781424429035</isbn><eisbn>1424429048</eisbn><eisbn>9781424429042</eisbn><abstract>Measurements of microwave transistorspsila noise require complex and expensive equipment and can be time consuming. In this paper, we are proposing an application of artificial neural networks for fast estimation of noise parameters from the device scattering parameters. This method requires measured values of the device noise parameters for the network training only. Once the network is trained noise parameters can be estimated from the scattering parameters without additional noise measurements. Devices working under different temperature conditions are considered.</abstract><pub>IEEE</pub><doi>10.1109/NEUREL.2008.4685608</doi><tpages>4</tpages></addata></record> |
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| ispartof | 2008 9th Symposium on Neural Network Applications in Electrical Engineering, 2008, p.183-186 |
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| language | eng |
| recordid | cdi_ieee_primary_4685608 |
| source | IEEE Electronic Library (IEL) Conference Proceedings |
| subjects | Artificial neural networks Circuit noise Microwave devices Microwave FETs Microwave transistors Noise figure Noise measurement noise parameters Parameter estimation S-parameters Scattering parameters Semiconductor device noise |
| title | ANN for noise estimation of microwave FETs from S-parameters |
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