A compact model for undoped symmetric double-gate MOSFETs with Schottky-barrier source/drain

A physics-based compact model for undoped symmetric double-gate MOSFETs with Schottky-barrier source and drain is formulated based on the quasi-2D surface-potential solution and Miller-Good tunneling method. Essential physics due to the screening of the gate field by free carriers, which is absent i...

Ausführliche Beschreibung

Bibliographische Detailangaben

Hauptverfasser:	Zhu, G.J., Zhou, X., Lee, T.S., Ang, L.K., See, G.H., Lin, S.H.
Format:	Tagungsbericht
Sprache:	eng
Schlagworte:	Charge carrier processes Circuit synthesis Geometry MOSFETs Numerical simulation Physics Silicon Solid modeling Tunneling Very large scale integration
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