Electron traps at HfO2/SiOx interfaces

Electron traps in HfO 2 have been investigated by measuring thermally stimulated current (TSC). Two different interface regions have been identified where captured electrons interact with energy band states. The two domains are separated by and close to the ldquointerlayerrdquo of SiO x commonly pre...

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Hauptverfasser: Raeissi, B., Chen, Y.Y., Piscator, J., Lai, Z.H., Engstrom, O.
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Chen, Y.Y.
Piscator, J.
Lai, Z.H.
Engstrom, O.
description Electron traps in HfO 2 have been investigated by measuring thermally stimulated current (TSC). Two different interface regions have been identified where captured electrons interact with energy band states. The two domains are separated by and close to the ldquointerlayerrdquo of SiO x commonly present in high-k/silicon stacks. On the inner side, between SiO x and silicon, we find an irregular silicon crystal which we interpret as a source for interface states. At the SiO x /HfO 2 interface, we find a high concentration of unstable traps with a strong influence on the electric field distribution in the gate stack.
doi_str_mv 10.1109/ESSDERC.2008.4681716
format Conference Proceeding
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Two different interface regions have been identified where captured electrons interact with energy band states. The two domains are separated by and close to the ldquointerlayerrdquo of SiO x commonly present in high-k/silicon stacks. On the inner side, between SiO x and silicon, we find an irregular silicon crystal which we interpret as a source for interface states. At the SiO x /HfO 2 interface, we find a high concentration of unstable traps with a strong influence on the electric field distribution in the gate stack.</description><subject>Amorphous materials</subject><subject>Charge carriers</subject><subject>Crystallization</subject><subject>Current measurement</subject><subject>Electron traps</subject><subject>Hafnium oxide</subject><subject>Interface states</subject><subject>Silicon</subject><subject>Thermal conductivity</subject><subject>Tunneling</subject><issn>1930-8876</issn><isbn>1424423635</isbn><isbn>9781424423637</isbn><isbn>1424423643</isbn><isbn>9781424423644</isbn><fulltext>true</fulltext><rsrctype>conference_proceeding</rsrctype><creationdate>2008</creationdate><recordtype>conference_proceeding</recordtype><sourceid>6IE</sourceid><sourceid>RIE</sourceid><recordid>eNpF0EtLAzEUBeCICrbVX6CLWbmbNsnN5LGUcbRCoeB0H5LMDR3pi2RE_fcWWnR1OZvvHC4hD4xOGaNm1rTtc_NeTzmleiqkZorJCzJmggvBQQq4_A9QXZERM0BLrZW8IeOcPyitAIQekcdmg2FI-10xJHfIhRuKeVzyWdsvv4t-N2CKLmC-JdfRbTLene-ErF6aVT0vF8vXt_ppUfZG-rLzxxqN4FhUHKVHGiLVaESM6LrjSGG8BjToOALFjvJIDQclJCjPnIQJaU9s_sLDp7eH1G9d-rF719uEGV0KaxvWbrPFlG1GCzEoypS0EZmzIjCwxqOzyKoQfIBOV_6o3p_UHhH_zPPX4BcR_F8v</recordid><startdate>200809</startdate><enddate>200809</enddate><creator>Raeissi, B.</creator><creator>Chen, Y.Y.</creator><creator>Piscator, J.</creator><creator>Lai, Z.H.</creator><creator>Engstrom, O.</creator><general>IEEE</general><scope>6IE</scope><scope>6IL</scope><scope>CBEJK</scope><scope>RIE</scope><scope>RIL</scope><scope>ADTPV</scope><scope>BNKNJ</scope><scope>F1S</scope></search><sort><creationdate>200809</creationdate><title>Electron traps at HfO2/SiOx interfaces</title><author>Raeissi, B. ; Chen, Y.Y. ; Piscator, J. ; Lai, Z.H. ; Engstrom, O.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-i96b-db1938e3a1f72e6be0cf08e94ffead81749b83e9ea2e30ed02f092374637b1a63</frbrgroupid><rsrctype>conference_proceedings</rsrctype><prefilter>conference_proceedings</prefilter><language>eng</language><creationdate>2008</creationdate><topic>Amorphous materials</topic><topic>Charge carriers</topic><topic>Crystallization</topic><topic>Current measurement</topic><topic>Electron traps</topic><topic>Hafnium oxide</topic><topic>Interface states</topic><topic>Silicon</topic><topic>Thermal conductivity</topic><topic>Tunneling</topic><toplevel>online_resources</toplevel><creatorcontrib>Raeissi, B.</creatorcontrib><creatorcontrib>Chen, Y.Y.</creatorcontrib><creatorcontrib>Piscator, J.</creatorcontrib><creatorcontrib>Lai, Z.H.</creatorcontrib><creatorcontrib>Engstrom, O.</creatorcontrib><collection>IEEE Electronic Library (IEL) Conference Proceedings</collection><collection>IEEE Proceedings Order Plan All Online (POP All Online) 1998-present by volume</collection><collection>IEEE Xplore All Conference Proceedings</collection><collection>IEEE Electronic Library (IEL)</collection><collection>IEEE Proceedings Order Plans (POP All) 1998-Present</collection><collection>SwePub</collection><collection>SwePub Conference</collection><collection>SWEPUB Chalmers tekniska högskola</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Raeissi, B.</au><au>Chen, Y.Y.</au><au>Piscator, J.</au><au>Lai, Z.H.</au><au>Engstrom, O.</au><format>book</format><genre>proceeding</genre><ristype>CONF</ristype><atitle>Electron traps at HfO2/SiOx interfaces</atitle><btitle>ESSDERC 2008 - 38th European Solid-State Device Research Conference</btitle><stitle>ESSDERC</stitle><date>2008-09</date><risdate>2008</risdate><spage>130</spage><epage>133</epage><pages>130-133</pages><issn>1930-8876</issn><isbn>1424423635</isbn><isbn>9781424423637</isbn><eisbn>1424423643</eisbn><eisbn>9781424423644</eisbn><abstract>Electron traps in HfO 2 have been investigated by measuring thermally stimulated current (TSC). Two different interface regions have been identified where captured electrons interact with energy band states. The two domains are separated by and close to the ldquointerlayerrdquo of SiO x commonly present in high-k/silicon stacks. On the inner side, between SiO x and silicon, we find an irregular silicon crystal which we interpret as a source for interface states. At the SiO x /HfO 2 interface, we find a high concentration of unstable traps with a strong influence on the electric field distribution in the gate stack.</abstract><pub>IEEE</pub><doi>10.1109/ESSDERC.2008.4681716</doi><tpages>4</tpages></addata></record>
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identifier ISSN: 1930-8876
ispartof ESSDERC 2008 - 38th European Solid-State Device Research Conference, 2008, p.130-133
issn 1930-8876
language eng
recordid cdi_ieee_primary_4681716
source IEEE Electronic Library (IEL) Conference Proceedings
subjects Amorphous materials
Charge carriers
Crystallization
Current measurement
Electron traps
Hafnium oxide
Interface states
Silicon
Thermal conductivity
Tunneling
title Electron traps at HfO2/SiOx interfaces
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