Electron traps at HfO2/SiOx interfaces
Electron traps in HfO 2 have been investigated by measuring thermally stimulated current (TSC). Two different interface regions have been identified where captured electrons interact with energy band states. The two domains are separated by and close to the ldquointerlayerrdquo of SiO x commonly pre...
Gespeichert in:
Hauptverfasser: | , , , , |
---|---|
Format: | Tagungsbericht |
Sprache: | eng |
Schlagworte: | |
Online-Zugang: | Volltext bestellen |
Tags: |
Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
|
container_end_page | 133 |
---|---|
container_issue | |
container_start_page | 130 |
container_title | |
container_volume | |
creator | Raeissi, B. Chen, Y.Y. Piscator, J. Lai, Z.H. Engstrom, O. |
description | Electron traps in HfO 2 have been investigated by measuring thermally stimulated current (TSC). Two different interface regions have been identified where captured electrons interact with energy band states. The two domains are separated by and close to the ldquointerlayerrdquo of SiO x commonly present in high-k/silicon stacks. On the inner side, between SiO x and silicon, we find an irregular silicon crystal which we interpret as a source for interface states. At the SiO x /HfO 2 interface, we find a high concentration of unstable traps with a strong influence on the electric field distribution in the gate stack. |
doi_str_mv | 10.1109/ESSDERC.2008.4681716 |
format | Conference Proceeding |
fullrecord | <record><control><sourceid>swepub_6IE</sourceid><recordid>TN_cdi_ieee_primary_4681716</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><ieee_id>4681716</ieee_id><sourcerecordid>oai_research_chalmers_se_3fc70176_fe1a_4c13_9bea_e15ccbc3d85b</sourcerecordid><originalsourceid>FETCH-LOGICAL-i96b-db1938e3a1f72e6be0cf08e94ffead81749b83e9ea2e30ed02f092374637b1a63</originalsourceid><addsrcrecordid>eNpF0EtLAzEUBeCICrbVX6CLWbmbNsnN5LGUcbRCoeB0H5LMDR3pi2RE_fcWWnR1OZvvHC4hD4xOGaNm1rTtc_NeTzmleiqkZorJCzJmggvBQQq4_A9QXZERM0BLrZW8IeOcPyitAIQekcdmg2FI-10xJHfIhRuKeVzyWdsvv4t-N2CKLmC-JdfRbTLene-ErF6aVT0vF8vXt_ppUfZG-rLzxxqN4FhUHKVHGiLVaESM6LrjSGG8BjToOALFjvJIDQclJCjPnIQJaU9s_sLDp7eH1G9d-rF719uEGV0KaxvWbrPFlG1GCzEoypS0EZmzIjCwxqOzyKoQfIBOV_6o3p_UHhH_zPPX4BcR_F8v</addsrcrecordid><sourcetype>Open Access Repository</sourcetype><iscdi>true</iscdi><recordtype>conference_proceeding</recordtype></control><display><type>conference_proceeding</type><title>Electron traps at HfO2/SiOx interfaces</title><source>IEEE Electronic Library (IEL) Conference Proceedings</source><creator>Raeissi, B. ; Chen, Y.Y. ; Piscator, J. ; Lai, Z.H. ; Engstrom, O.</creator><creatorcontrib>Raeissi, B. ; Chen, Y.Y. ; Piscator, J. ; Lai, Z.H. ; Engstrom, O.</creatorcontrib><description>Electron traps in HfO 2 have been investigated by measuring thermally stimulated current (TSC). Two different interface regions have been identified where captured electrons interact with energy band states. The two domains are separated by and close to the ldquointerlayerrdquo of SiO x commonly present in high-k/silicon stacks. On the inner side, between SiO x and silicon, we find an irregular silicon crystal which we interpret as a source for interface states. At the SiO x /HfO 2 interface, we find a high concentration of unstable traps with a strong influence on the electric field distribution in the gate stack.</description><identifier>ISSN: 1930-8876</identifier><identifier>ISBN: 1424423635</identifier><identifier>ISBN: 9781424423637</identifier><identifier>EISBN: 1424423643</identifier><identifier>EISBN: 9781424423644</identifier><identifier>DOI: 10.1109/ESSDERC.2008.4681716</identifier><language>eng</language><publisher>IEEE</publisher><subject>Amorphous materials ; Charge carriers ; Crystallization ; Current measurement ; Electron traps ; Hafnium oxide ; Interface states ; Silicon ; Thermal conductivity ; Tunneling</subject><ispartof>ESSDERC 2008 - 38th European Solid-State Device Research Conference, 2008, p.130-133</ispartof><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://ieeexplore.ieee.org/document/4681716$$EHTML$$P50$$Gieee$$H</linktohtml><link.rule.ids>230,309,310,780,784,789,790,885,2058,4050,4051,27925,54920</link.rule.ids><linktorsrc>$$Uhttps://ieeexplore.ieee.org/document/4681716$$EView_record_in_IEEE$$FView_record_in_$$GIEEE</linktorsrc><backlink>$$Uhttps://research.chalmers.se/publication/74312$$DView record from Swedish Publication Index$$Hfree_for_read</backlink></links><search><creatorcontrib>Raeissi, B.</creatorcontrib><creatorcontrib>Chen, Y.Y.</creatorcontrib><creatorcontrib>Piscator, J.</creatorcontrib><creatorcontrib>Lai, Z.H.</creatorcontrib><creatorcontrib>Engstrom, O.</creatorcontrib><title>Electron traps at HfO2/SiOx interfaces</title><title>ESSDERC 2008 - 38th European Solid-State Device Research Conference</title><addtitle>ESSDERC</addtitle><description>Electron traps in HfO 2 have been investigated by measuring thermally stimulated current (TSC). Two different interface regions have been identified where captured electrons interact with energy band states. The two domains are separated by and close to the ldquointerlayerrdquo of SiO x commonly present in high-k/silicon stacks. On the inner side, between SiO x and silicon, we find an irregular silicon crystal which we interpret as a source for interface states. At the SiO x /HfO 2 interface, we find a high concentration of unstable traps with a strong influence on the electric field distribution in the gate stack.</description><subject>Amorphous materials</subject><subject>Charge carriers</subject><subject>Crystallization</subject><subject>Current measurement</subject><subject>Electron traps</subject><subject>Hafnium oxide</subject><subject>Interface states</subject><subject>Silicon</subject><subject>Thermal conductivity</subject><subject>Tunneling</subject><issn>1930-8876</issn><isbn>1424423635</isbn><isbn>9781424423637</isbn><isbn>1424423643</isbn><isbn>9781424423644</isbn><fulltext>true</fulltext><rsrctype>conference_proceeding</rsrctype><creationdate>2008</creationdate><recordtype>conference_proceeding</recordtype><sourceid>6IE</sourceid><sourceid>RIE</sourceid><recordid>eNpF0EtLAzEUBeCICrbVX6CLWbmbNsnN5LGUcbRCoeB0H5LMDR3pi2RE_fcWWnR1OZvvHC4hD4xOGaNm1rTtc_NeTzmleiqkZorJCzJmggvBQQq4_A9QXZERM0BLrZW8IeOcPyitAIQekcdmg2FI-10xJHfIhRuKeVzyWdsvv4t-N2CKLmC-JdfRbTLene-ErF6aVT0vF8vXt_ppUfZG-rLzxxqN4FhUHKVHGiLVaESM6LrjSGG8BjToOALFjvJIDQclJCjPnIQJaU9s_sLDp7eH1G9d-rF719uEGV0KaxvWbrPFlG1GCzEoypS0EZmzIjCwxqOzyKoQfIBOV_6o3p_UHhH_zPPX4BcR_F8v</recordid><startdate>200809</startdate><enddate>200809</enddate><creator>Raeissi, B.</creator><creator>Chen, Y.Y.</creator><creator>Piscator, J.</creator><creator>Lai, Z.H.</creator><creator>Engstrom, O.</creator><general>IEEE</general><scope>6IE</scope><scope>6IL</scope><scope>CBEJK</scope><scope>RIE</scope><scope>RIL</scope><scope>ADTPV</scope><scope>BNKNJ</scope><scope>F1S</scope></search><sort><creationdate>200809</creationdate><title>Electron traps at HfO2/SiOx interfaces</title><author>Raeissi, B. ; Chen, Y.Y. ; Piscator, J. ; Lai, Z.H. ; Engstrom, O.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-i96b-db1938e3a1f72e6be0cf08e94ffead81749b83e9ea2e30ed02f092374637b1a63</frbrgroupid><rsrctype>conference_proceedings</rsrctype><prefilter>conference_proceedings</prefilter><language>eng</language><creationdate>2008</creationdate><topic>Amorphous materials</topic><topic>Charge carriers</topic><topic>Crystallization</topic><topic>Current measurement</topic><topic>Electron traps</topic><topic>Hafnium oxide</topic><topic>Interface states</topic><topic>Silicon</topic><topic>Thermal conductivity</topic><topic>Tunneling</topic><toplevel>online_resources</toplevel><creatorcontrib>Raeissi, B.</creatorcontrib><creatorcontrib>Chen, Y.Y.</creatorcontrib><creatorcontrib>Piscator, J.</creatorcontrib><creatorcontrib>Lai, Z.H.</creatorcontrib><creatorcontrib>Engstrom, O.</creatorcontrib><collection>IEEE Electronic Library (IEL) Conference Proceedings</collection><collection>IEEE Proceedings Order Plan All Online (POP All Online) 1998-present by volume</collection><collection>IEEE Xplore All Conference Proceedings</collection><collection>IEEE Electronic Library (IEL)</collection><collection>IEEE Proceedings Order Plans (POP All) 1998-Present</collection><collection>SwePub</collection><collection>SwePub Conference</collection><collection>SWEPUB Chalmers tekniska högskola</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Raeissi, B.</au><au>Chen, Y.Y.</au><au>Piscator, J.</au><au>Lai, Z.H.</au><au>Engstrom, O.</au><format>book</format><genre>proceeding</genre><ristype>CONF</ristype><atitle>Electron traps at HfO2/SiOx interfaces</atitle><btitle>ESSDERC 2008 - 38th European Solid-State Device Research Conference</btitle><stitle>ESSDERC</stitle><date>2008-09</date><risdate>2008</risdate><spage>130</spage><epage>133</epage><pages>130-133</pages><issn>1930-8876</issn><isbn>1424423635</isbn><isbn>9781424423637</isbn><eisbn>1424423643</eisbn><eisbn>9781424423644</eisbn><abstract>Electron traps in HfO 2 have been investigated by measuring thermally stimulated current (TSC). Two different interface regions have been identified where captured electrons interact with energy band states. The two domains are separated by and close to the ldquointerlayerrdquo of SiO x commonly present in high-k/silicon stacks. On the inner side, between SiO x and silicon, we find an irregular silicon crystal which we interpret as a source for interface states. At the SiO x /HfO 2 interface, we find a high concentration of unstable traps with a strong influence on the electric field distribution in the gate stack.</abstract><pub>IEEE</pub><doi>10.1109/ESSDERC.2008.4681716</doi><tpages>4</tpages></addata></record> |
fulltext | fulltext_linktorsrc |
identifier | ISSN: 1930-8876 |
ispartof | ESSDERC 2008 - 38th European Solid-State Device Research Conference, 2008, p.130-133 |
issn | 1930-8876 |
language | eng |
recordid | cdi_ieee_primary_4681716 |
source | IEEE Electronic Library (IEL) Conference Proceedings |
subjects | Amorphous materials Charge carriers Crystallization Current measurement Electron traps Hafnium oxide Interface states Silicon Thermal conductivity Tunneling |
title | Electron traps at HfO2/SiOx interfaces |
url | https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-01-02T15%3A07%3A59IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-swepub_6IE&rft_val_fmt=info:ofi/fmt:kev:mtx:book&rft.genre=proceeding&rft.atitle=Electron%20traps%20at%20HfO2/SiOx%20interfaces&rft.btitle=ESSDERC%202008%20-%2038th%20European%20Solid-State%20Device%20Research%20Conference&rft.au=Raeissi,%20B.&rft.date=2008-09&rft.spage=130&rft.epage=133&rft.pages=130-133&rft.issn=1930-8876&rft.isbn=1424423635&rft.isbn_list=9781424423637&rft_id=info:doi/10.1109/ESSDERC.2008.4681716&rft_dat=%3Cswepub_6IE%3Eoai_research_chalmers_se_3fc70176_fe1a_4c13_9bea_e15ccbc3d85b%3C/swepub_6IE%3E%3Curl%3E%3C/url%3E&rft.eisbn=1424423643&rft.eisbn_list=9781424423644&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_id=info:pmid/&rft_ieee_id=4681716&rfr_iscdi=true |