Fabrication of poly 3C-SiC thin film diodes for extreme environment applications
Polycrystalline (poly) 3C-SiC thin films were deposited onto oxidized Si wafers by APCVD using HMDS as a precursor. In this work, the optimized growth temperature and HMDS flow rate were 1,100degC and 8 sccm, respectively. A Schottky diode with a Au/poly 3C-SiC/Si(n-type) structure was fabricated an...
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| creator | Gwiy-Sang Chung Jeong-Hak Ahn Ki-Bong Han |
| description | Polycrystalline (poly) 3C-SiC thin films were deposited onto oxidized Si wafers by APCVD using HMDS as a precursor. In this work, the optimized growth temperature and HMDS flow rate were 1,100degC and 8 sccm, respectively. A Schottky diode with a Au/poly 3C-SiC/Si(n-type) structure was fabricated and its threshold voltage (V d ), breakdown voltage, thickness of depletion layer, and doping concentration (N D ) values were measured as 0.84 V, over 140 V, 61 nm, and 2.7 times 10 19 cm 3 , respectively. To produce good ohmic contact, Al/3C-SiC were annealed at 300, 400, and 500degC for 30 min under a vacuum of 5.0 times 10 -6 Torr. The obtained p-n junction diode fabricated by poly 3C-SiC had similar characteristics to a single 3C-SiC p-n junction diode. |
| doi_str_mv | 10.1109/ISIE.2008.4676968 |
| format | Conference Proceeding |
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In this work, the optimized growth temperature and HMDS flow rate were 1,100degC and 8 sccm, respectively. A Schottky diode with a Au/poly 3C-SiC/Si(n-type) structure was fabricated and its threshold voltage (V d ), breakdown voltage, thickness of depletion layer, and doping concentration (N D ) values were measured as 0.84 V, over 140 V, 61 nm, and 2.7 times 10 19 cm 3 , respectively. To produce good ohmic contact, Al/3C-SiC were annealed at 300, 400, and 500degC for 30 min under a vacuum of 5.0 times 10 -6 Torr. The obtained p-n junction diode fabricated by poly 3C-SiC had similar characteristics to a single 3C-SiC p-n junction diode.</description><identifier>ISSN: 2163-5137</identifier><identifier>ISBN: 1424416655</identifier><identifier>ISBN: 9781424416653</identifier><identifier>EISBN: 1424416663</identifier><identifier>EISBN: 9781424416660</identifier><identifier>DOI: 10.1109/ISIE.2008.4676968</identifier><identifier>LCCN: 2007936380</identifier><language>eng</language><publisher>IEEE</publisher><subject>Doping ; Fabrication ; Gold ; P-n junctions ; Schottky diodes ; Semiconductor thin films ; Sputtering ; Temperature ; Threshold voltage ; Transistors</subject><ispartof>2008 IEEE International Symposium on Industrial Electronics, 2008, p.2576-2579</ispartof><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://ieeexplore.ieee.org/document/4676968$$EHTML$$P50$$Gieee$$H</linktohtml><link.rule.ids>309,310,780,784,789,790,2058,27925,54920</link.rule.ids><linktorsrc>$$Uhttps://ieeexplore.ieee.org/document/4676968$$EView_record_in_IEEE$$FView_record_in_$$GIEEE</linktorsrc></links><search><creatorcontrib>Gwiy-Sang Chung</creatorcontrib><creatorcontrib>Jeong-Hak Ahn</creatorcontrib><creatorcontrib>Ki-Bong Han</creatorcontrib><title>Fabrication of poly 3C-SiC thin film diodes for extreme environment applications</title><title>2008 IEEE International Symposium on Industrial Electronics</title><addtitle>ISIE</addtitle><description>Polycrystalline (poly) 3C-SiC thin films were deposited onto oxidized Si wafers by APCVD using HMDS as a precursor. In this work, the optimized growth temperature and HMDS flow rate were 1,100degC and 8 sccm, respectively. A Schottky diode with a Au/poly 3C-SiC/Si(n-type) structure was fabricated and its threshold voltage (V d ), breakdown voltage, thickness of depletion layer, and doping concentration (N D ) values were measured as 0.84 V, over 140 V, 61 nm, and 2.7 times 10 19 cm 3 , respectively. To produce good ohmic contact, Al/3C-SiC were annealed at 300, 400, and 500degC for 30 min under a vacuum of 5.0 times 10 -6 Torr. The obtained p-n junction diode fabricated by poly 3C-SiC had similar characteristics to a single 3C-SiC p-n junction diode.</description><subject>Doping</subject><subject>Fabrication</subject><subject>Gold</subject><subject>P-n junctions</subject><subject>Schottky diodes</subject><subject>Semiconductor thin films</subject><subject>Sputtering</subject><subject>Temperature</subject><subject>Threshold voltage</subject><subject>Transistors</subject><issn>2163-5137</issn><isbn>1424416655</isbn><isbn>9781424416653</isbn><isbn>1424416663</isbn><isbn>9781424416660</isbn><fulltext>true</fulltext><rsrctype>conference_proceeding</rsrctype><creationdate>2008</creationdate><recordtype>conference_proceeding</recordtype><sourceid>6IE</sourceid><sourceid>RIE</sourceid><recordid>eNpFUM1Kw0AYXNGCbe0DiJd9gcT9_zlKaGugoNDey27zLS4k2bAJYt_egAVPw8DMMDMIPVNSUkrsa32styUjxJRCaWWVuUMrKpgQVCnF7_-JlA9oyajihaRcL9BqNmnLFTfkEW3GMXpCidJilizR5875HC9uiqnHKeAhtVfMq-IYKzx9xR6H2Ha4iamBEYeUMfxMGTrA0H_HnPoO-gm7YWhvGeMTWgTXjrC54RqddttT9V4cPvZ19XYooiVT4cDoQJx3wORchynJfePFxVCjnDNEkGCsAGntvEMHDeAarZgXkgdNfeBr9PIXGwHgPOTYuXw9357hvw6pU5Q</recordid><startdate>200806</startdate><enddate>200806</enddate><creator>Gwiy-Sang Chung</creator><creator>Jeong-Hak Ahn</creator><creator>Ki-Bong Han</creator><general>IEEE</general><scope>6IE</scope><scope>6IL</scope><scope>CBEJK</scope><scope>RIE</scope><scope>RIL</scope></search><sort><creationdate>200806</creationdate><title>Fabrication of poly 3C-SiC thin film diodes for extreme environment applications</title><author>Gwiy-Sang Chung ; Jeong-Hak Ahn ; Ki-Bong Han</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-i90t-ae87f0abae25b012653bdb4c8186aa8040f894e5991637f7eead762b453f71bf3</frbrgroupid><rsrctype>conference_proceedings</rsrctype><prefilter>conference_proceedings</prefilter><language>eng</language><creationdate>2008</creationdate><topic>Doping</topic><topic>Fabrication</topic><topic>Gold</topic><topic>P-n junctions</topic><topic>Schottky diodes</topic><topic>Semiconductor thin films</topic><topic>Sputtering</topic><topic>Temperature</topic><topic>Threshold voltage</topic><topic>Transistors</topic><toplevel>online_resources</toplevel><creatorcontrib>Gwiy-Sang Chung</creatorcontrib><creatorcontrib>Jeong-Hak Ahn</creatorcontrib><creatorcontrib>Ki-Bong Han</creatorcontrib><collection>IEEE Electronic Library (IEL) Conference Proceedings</collection><collection>IEEE Proceedings Order Plan All Online (POP All Online) 1998-present by volume</collection><collection>IEEE Xplore All Conference Proceedings</collection><collection>IEEE Electronic Library (IEL)</collection><collection>IEEE Proceedings Order Plans (POP All) 1998-Present</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Gwiy-Sang Chung</au><au>Jeong-Hak Ahn</au><au>Ki-Bong Han</au><format>book</format><genre>proceeding</genre><ristype>CONF</ristype><atitle>Fabrication of poly 3C-SiC thin film diodes for extreme environment applications</atitle><btitle>2008 IEEE International Symposium on Industrial Electronics</btitle><stitle>ISIE</stitle><date>2008-06</date><risdate>2008</risdate><spage>2576</spage><epage>2579</epage><pages>2576-2579</pages><issn>2163-5137</issn><isbn>1424416655</isbn><isbn>9781424416653</isbn><eisbn>1424416663</eisbn><eisbn>9781424416660</eisbn><abstract>Polycrystalline (poly) 3C-SiC thin films were deposited onto oxidized Si wafers by APCVD using HMDS as a precursor. In this work, the optimized growth temperature and HMDS flow rate were 1,100degC and 8 sccm, respectively. A Schottky diode with a Au/poly 3C-SiC/Si(n-type) structure was fabricated and its threshold voltage (V d ), breakdown voltage, thickness of depletion layer, and doping concentration (N D ) values were measured as 0.84 V, over 140 V, 61 nm, and 2.7 times 10 19 cm 3 , respectively. To produce good ohmic contact, Al/3C-SiC were annealed at 300, 400, and 500degC for 30 min under a vacuum of 5.0 times 10 -6 Torr. The obtained p-n junction diode fabricated by poly 3C-SiC had similar characteristics to a single 3C-SiC p-n junction diode.</abstract><pub>IEEE</pub><doi>10.1109/ISIE.2008.4676968</doi><tpages>4</tpages></addata></record> |
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| identifier | ISSN: 2163-5137 |
| ispartof | 2008 IEEE International Symposium on Industrial Electronics, 2008, p.2576-2579 |
| issn | 2163-5137 |
| language | eng |
| recordid | cdi_ieee_primary_4676968 |
| source | IEEE Electronic Library (IEL) Conference Proceedings |
| subjects | Doping Fabrication Gold P-n junctions Schottky diodes Semiconductor thin films Sputtering Temperature Threshold voltage Transistors |
| title | Fabrication of poly 3C-SiC thin film diodes for extreme environment applications |
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