6.5 Watt, 35 GHz Balanced Power Amplifier MMIC using 6-Inch GaAs pHEMT Commercial Technology

A 6.5 watt power amplifier MMIC has been developed for the 35 GHz band. The amplifier exhibits high performance at low processing cost through the use of a commercially available 6-inch, 0.15-mum pHEMT process with 100 mum thick substrate. The balanced four stage amplifier MMIC has 23 dB of gain, 6....

Ausführliche Beschreibung

Gespeichert in:
Bibliographische Detailangaben
Hauptverfasser: Mahon, S.J., Young, A.C., Fattorini, A.P., Harvey, J.T.
Format: Tagungsbericht
Sprache:eng
Schlagworte:
Online-Zugang:Volltext bestellen
Tags: Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
container_end_page 4
container_issue
container_start_page 1
container_title
container_volume
creator Mahon, S.J.
Young, A.C.
Fattorini, A.P.
Harvey, J.T.
description A 6.5 watt power amplifier MMIC has been developed for the 35 GHz band. The amplifier exhibits high performance at low processing cost through the use of a commercially available 6-inch, 0.15-mum pHEMT process with 100 mum thick substrate. The balanced four stage amplifier MMIC has 23 dB of gain, 6.5 watts saturated output power (38.1 dBm) with high absorption load for driving into a mismatch, and power added efficiency of 24%. In terms of output power, this is to the authors' knowledge the best reported for fully matched GaAs pHEMT MMICs on 100-mum substrates at millimetre-wave frequencies.
doi_str_mv 10.1109/CSICS.2008.47
format Conference Proceeding
fullrecord <record><control><sourceid>ieee_6IE</sourceid><recordid>TN_cdi_ieee_primary_4674502</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><ieee_id>4674502</ieee_id><sourcerecordid>4674502</sourcerecordid><originalsourceid>FETCH-LOGICAL-i90t-d3a8d89a88150bc47183266dd92ea4938a817624971bf4f007fbfe837cd316593</originalsourceid><addsrcrecordid>eNotT0lLw0AYHZeCTe3Rk5f5ASbO8s12rKG2gQaFBrwIZZpM2pEsJYlI_fUG7Ok9eAvvIfRASUQpMc_xNom3ESNER6Cu0NwoTYEBUAOEXqMp4wpCDcBvUHARuBG3aEqFIKEe3RMUjHFliGGC36Gg778I4aOgpuhTRgJ_2GF4wlzg1foXv9jKNrkr8Hv74zq8qE-VL_3I0jSJ8XfvmwOWYdLkR7yyix6f1ss0w3Fb167Lva1w5vJj01bt4XyPJqWteje_4Axlr8ssXoebt1USLzahN2QIC251oY3Vmgqyz0FRzZmURWGYs2C4tuNSycAoui-hHJ-U-9JprvKCUykMn6HH_1rvnNudOl_b7rwDqUAQxv8AHpBUaw</addsrcrecordid><sourcetype>Publisher</sourcetype><iscdi>true</iscdi><recordtype>conference_proceeding</recordtype></control><display><type>conference_proceeding</type><title>6.5 Watt, 35 GHz Balanced Power Amplifier MMIC using 6-Inch GaAs pHEMT Commercial Technology</title><source>IEEE Electronic Library (IEL) Conference Proceedings</source><creator>Mahon, S.J. ; Young, A.C. ; Fattorini, A.P. ; Harvey, J.T.</creator><creatorcontrib>Mahon, S.J. ; Young, A.C. ; Fattorini, A.P. ; Harvey, J.T.</creatorcontrib><description>A 6.5 watt power amplifier MMIC has been developed for the 35 GHz band. The amplifier exhibits high performance at low processing cost through the use of a commercially available 6-inch, 0.15-mum pHEMT process with 100 mum thick substrate. The balanced four stage amplifier MMIC has 23 dB of gain, 6.5 watts saturated output power (38.1 dBm) with high absorption load for driving into a mismatch, and power added efficiency of 24%. In terms of output power, this is to the authors' knowledge the best reported for fully matched GaAs pHEMT MMICs on 100-mum substrates at millimetre-wave frequencies.</description><identifier>ISSN: 1550-8781</identifier><identifier>ISBN: 1424419395</identifier><identifier>ISBN: 9781424419395</identifier><identifier>EISSN: 2374-8443</identifier><identifier>EISBN: 9781424419401</identifier><identifier>EISBN: 1424419409</identifier><identifier>DOI: 10.1109/CSICS.2008.47</identifier><identifier>LCCN: 2007909253</identifier><language>eng</language><publisher>IEEE</publisher><subject>Absorption ; Costs ; Frequency ; Gain ; Gallium arsenide ; High power amplifiers ; MMICs ; PHEMTs ; Power amplifiers ; Power generation</subject><ispartof>2008 IEEE Compound Semiconductor Integrated Circuits Symposium, 2008, p.1-4</ispartof><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://ieeexplore.ieee.org/document/4674502$$EHTML$$P50$$Gieee$$H</linktohtml><link.rule.ids>309,310,776,780,785,786,2052,27902,54895</link.rule.ids><linktorsrc>$$Uhttps://ieeexplore.ieee.org/document/4674502$$EView_record_in_IEEE$$FView_record_in_$$GIEEE</linktorsrc></links><search><creatorcontrib>Mahon, S.J.</creatorcontrib><creatorcontrib>Young, A.C.</creatorcontrib><creatorcontrib>Fattorini, A.P.</creatorcontrib><creatorcontrib>Harvey, J.T.</creatorcontrib><title>6.5 Watt, 35 GHz Balanced Power Amplifier MMIC using 6-Inch GaAs pHEMT Commercial Technology</title><title>2008 IEEE Compound Semiconductor Integrated Circuits Symposium</title><addtitle>CSICS</addtitle><description>A 6.5 watt power amplifier MMIC has been developed for the 35 GHz band. The amplifier exhibits high performance at low processing cost through the use of a commercially available 6-inch, 0.15-mum pHEMT process with 100 mum thick substrate. The balanced four stage amplifier MMIC has 23 dB of gain, 6.5 watts saturated output power (38.1 dBm) with high absorption load for driving into a mismatch, and power added efficiency of 24%. In terms of output power, this is to the authors' knowledge the best reported for fully matched GaAs pHEMT MMICs on 100-mum substrates at millimetre-wave frequencies.</description><subject>Absorption</subject><subject>Costs</subject><subject>Frequency</subject><subject>Gain</subject><subject>Gallium arsenide</subject><subject>High power amplifiers</subject><subject>MMICs</subject><subject>PHEMTs</subject><subject>Power amplifiers</subject><subject>Power generation</subject><issn>1550-8781</issn><issn>2374-8443</issn><isbn>1424419395</isbn><isbn>9781424419395</isbn><isbn>9781424419401</isbn><isbn>1424419409</isbn><fulltext>true</fulltext><rsrctype>conference_proceeding</rsrctype><creationdate>2008</creationdate><recordtype>conference_proceeding</recordtype><sourceid>6IE</sourceid><sourceid>RIE</sourceid><recordid>eNotT0lLw0AYHZeCTe3Rk5f5ASbO8s12rKG2gQaFBrwIZZpM2pEsJYlI_fUG7Ok9eAvvIfRASUQpMc_xNom3ESNER6Cu0NwoTYEBUAOEXqMp4wpCDcBvUHARuBG3aEqFIKEe3RMUjHFliGGC36Gg778I4aOgpuhTRgJ_2GF4wlzg1foXv9jKNrkr8Hv74zq8qE-VL_3I0jSJ8XfvmwOWYdLkR7yyix6f1ss0w3Fb167Lva1w5vJj01bt4XyPJqWteje_4Axlr8ssXoebt1USLzahN2QIC251oY3Vmgqyz0FRzZmURWGYs2C4tuNSycAoui-hHJ-U-9JprvKCUykMn6HH_1rvnNudOl_b7rwDqUAQxv8AHpBUaw</recordid><startdate>200810</startdate><enddate>200810</enddate><creator>Mahon, S.J.</creator><creator>Young, A.C.</creator><creator>Fattorini, A.P.</creator><creator>Harvey, J.T.</creator><general>IEEE</general><scope>6IE</scope><scope>6IH</scope><scope>CBEJK</scope><scope>RIE</scope><scope>RIO</scope></search><sort><creationdate>200810</creationdate><title>6.5 Watt, 35 GHz Balanced Power Amplifier MMIC using 6-Inch GaAs pHEMT Commercial Technology</title><author>Mahon, S.J. ; Young, A.C. ; Fattorini, A.P. ; Harvey, J.T.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-i90t-d3a8d89a88150bc47183266dd92ea4938a817624971bf4f007fbfe837cd316593</frbrgroupid><rsrctype>conference_proceedings</rsrctype><prefilter>conference_proceedings</prefilter><language>eng</language><creationdate>2008</creationdate><topic>Absorption</topic><topic>Costs</topic><topic>Frequency</topic><topic>Gain</topic><topic>Gallium arsenide</topic><topic>High power amplifiers</topic><topic>MMICs</topic><topic>PHEMTs</topic><topic>Power amplifiers</topic><topic>Power generation</topic><toplevel>online_resources</toplevel><creatorcontrib>Mahon, S.J.</creatorcontrib><creatorcontrib>Young, A.C.</creatorcontrib><creatorcontrib>Fattorini, A.P.</creatorcontrib><creatorcontrib>Harvey, J.T.</creatorcontrib><collection>IEEE Electronic Library (IEL) Conference Proceedings</collection><collection>IEEE Proceedings Order Plan (POP) 1998-present by volume</collection><collection>IEEE Xplore All Conference Proceedings</collection><collection>IEEE Electronic Library (IEL)</collection><collection>IEEE Proceedings Order Plans (POP) 1998-present</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Mahon, S.J.</au><au>Young, A.C.</au><au>Fattorini, A.P.</au><au>Harvey, J.T.</au><format>book</format><genre>proceeding</genre><ristype>CONF</ristype><atitle>6.5 Watt, 35 GHz Balanced Power Amplifier MMIC using 6-Inch GaAs pHEMT Commercial Technology</atitle><btitle>2008 IEEE Compound Semiconductor Integrated Circuits Symposium</btitle><stitle>CSICS</stitle><date>2008-10</date><risdate>2008</risdate><spage>1</spage><epage>4</epage><pages>1-4</pages><issn>1550-8781</issn><eissn>2374-8443</eissn><isbn>1424419395</isbn><isbn>9781424419395</isbn><eisbn>9781424419401</eisbn><eisbn>1424419409</eisbn><abstract>A 6.5 watt power amplifier MMIC has been developed for the 35 GHz band. The amplifier exhibits high performance at low processing cost through the use of a commercially available 6-inch, 0.15-mum pHEMT process with 100 mum thick substrate. The balanced four stage amplifier MMIC has 23 dB of gain, 6.5 watts saturated output power (38.1 dBm) with high absorption load for driving into a mismatch, and power added efficiency of 24%. In terms of output power, this is to the authors' knowledge the best reported for fully matched GaAs pHEMT MMICs on 100-mum substrates at millimetre-wave frequencies.</abstract><pub>IEEE</pub><doi>10.1109/CSICS.2008.47</doi><tpages>4</tpages></addata></record>
fulltext fulltext_linktorsrc
identifier ISSN: 1550-8781
ispartof 2008 IEEE Compound Semiconductor Integrated Circuits Symposium, 2008, p.1-4
issn 1550-8781
2374-8443
language eng
recordid cdi_ieee_primary_4674502
source IEEE Electronic Library (IEL) Conference Proceedings
subjects Absorption
Costs
Frequency
Gain
Gallium arsenide
High power amplifiers
MMICs
PHEMTs
Power amplifiers
Power generation
title 6.5 Watt, 35 GHz Balanced Power Amplifier MMIC using 6-Inch GaAs pHEMT Commercial Technology
url https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-02-12T20%3A57%3A30IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-ieee_6IE&rft_val_fmt=info:ofi/fmt:kev:mtx:book&rft.genre=proceeding&rft.atitle=6.5%20Watt,%2035%20GHz%20Balanced%20Power%20Amplifier%20MMIC%20using%206-Inch%20GaAs%20pHEMT%20Commercial%20Technology&rft.btitle=2008%20IEEE%20Compound%20Semiconductor%20Integrated%20Circuits%20Symposium&rft.au=Mahon,%20S.J.&rft.date=2008-10&rft.spage=1&rft.epage=4&rft.pages=1-4&rft.issn=1550-8781&rft.eissn=2374-8443&rft.isbn=1424419395&rft.isbn_list=9781424419395&rft_id=info:doi/10.1109/CSICS.2008.47&rft_dat=%3Cieee_6IE%3E4674502%3C/ieee_6IE%3E%3Curl%3E%3C/url%3E&rft.eisbn=9781424419401&rft.eisbn_list=1424419409&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_id=info:pmid/&rft_ieee_id=4674502&rfr_iscdi=true