A new cell structure for very thin high-efficiency silicon solar cells
The cell has a corrugated structure, which is formed by aligned V grooves on both the front and back surfaces. The substrate thickness is reduced to 50 mu m while retaining high mechanical strength. This permits ease of handling during the fabrication process and subsequent procedures. This thin sub...
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| Veröffentlicht in: | IEEE transactions on electron devices 1990-02, Vol.37 (2), p.344-347 |
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| container_end_page | 347 |
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| container_issue | 2 |
| container_start_page | 344 |
| container_title | IEEE transactions on electron devices |
| container_volume | 37 |
| creator | Uematsu, T. Ida, M. Hane, K. Kokunai, S. Saitoh, T. |
| description | The cell has a corrugated structure, which is formed by aligned V grooves on both the front and back surfaces. The substrate thickness is reduced to 50 mu m while retaining high mechanical strength. This permits ease of handling during the fabrication process and subsequent procedures. This thin substrate promises a very high open-circuit voltage, and the structure is also beneficial to high optical performance. The surface reflectance is reduced in the same manner as that of V-grooved cells, but the optical path is lengthened by a minimum of four times the substrate thickness. Performance of experimental cells is also discussed.< > |
| doi_str_mv | 10.1109/16.46363 |
| format | Article |
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Performance of experimental cells is also discussed.< ></description><subject>Applied sciences</subject><subject>Charge carrier lifetime</subject><subject>Corrugated surfaces</subject><subject>Energy</subject><subject>Etching</subject><subject>Exact sciences and technology</subject><subject>Laboratories</subject><subject>Natural energy</subject><subject>Optical device fabrication</subject><subject>Photovoltaic cells</subject><subject>Reflectivity</subject><subject>Silicon</subject><subject>Solar energy</subject><subject>Solar thermal conversion</subject><subject>Stress</subject><subject>Voltage</subject><issn>0018-9383</issn><issn>1557-9646</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>1990</creationdate><recordtype>article</recordtype><recordid>eNqNkE1LAzEQhoMoWKvg1VsOIl62ZjYfmxxLsSoUvOg5ZNPERra7NdlV-u_ddkuvehpm5pmHl0HoGsgEgKgHEBMmqKAnaAScF5kSTJyiESEgM0UlPUcXKX32rWAsH6H5FNfuB1tXVTi1sbNtFx32TcTfLm5xuwo1XoWPVea8Dza42m5xClWwTY1TU5m4P02X6MybKrmrQx2j9_nj2-w5W7w-vcymi8xSwdsMSmU947YoTd5nKdUSBCiVe9oPhCt8yYByD0vJGVEyL4y0hHnCuWXgrKVjdDd4N7H56lxq9TqkXQJTu6ZLOpesoMDl3yCXREjJ_wEWSgnFevB-AG1sUorO600MaxO3GojevV6D0PvX9-jtwWmSNZWPprYhHfnexpjYGW8GLDjnjttB8QvK1Ilv</recordid><startdate>19900201</startdate><enddate>19900201</enddate><creator>Uematsu, T.</creator><creator>Ida, M.</creator><creator>Hane, K.</creator><creator>Kokunai, S.</creator><creator>Saitoh, T.</creator><general>IEEE</general><general>Institute of Electrical and Electronics Engineers</general><scope>IQODW</scope><scope>AAYXX</scope><scope>CITATION</scope><scope>8FD</scope><scope>H8D</scope><scope>L7M</scope><scope>7SP</scope></search><sort><creationdate>19900201</creationdate><title>A new cell structure for very thin high-efficiency silicon solar cells</title><author>Uematsu, T. ; Ida, M. ; Hane, K. ; Kokunai, S. ; Saitoh, T.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c365t-1b9cf45c7ba2383b9d161992f3ba26e7fb4135f1d85409827a8c04f055c41ecc3</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>1990</creationdate><topic>Applied sciences</topic><topic>Charge carrier lifetime</topic><topic>Corrugated surfaces</topic><topic>Energy</topic><topic>Etching</topic><topic>Exact sciences and technology</topic><topic>Laboratories</topic><topic>Natural energy</topic><topic>Optical device fabrication</topic><topic>Photovoltaic cells</topic><topic>Reflectivity</topic><topic>Silicon</topic><topic>Solar energy</topic><topic>Solar thermal conversion</topic><topic>Stress</topic><topic>Voltage</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Uematsu, T.</creatorcontrib><creatorcontrib>Ida, M.</creatorcontrib><creatorcontrib>Hane, K.</creatorcontrib><creatorcontrib>Kokunai, S.</creatorcontrib><creatorcontrib>Saitoh, T.</creatorcontrib><collection>Pascal-Francis</collection><collection>CrossRef</collection><collection>Technology Research Database</collection><collection>Aerospace Database</collection><collection>Advanced Technologies Database with Aerospace</collection><collection>Electronics & Communications Abstracts</collection><jtitle>IEEE transactions on electron devices</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Uematsu, T.</au><au>Ida, M.</au><au>Hane, K.</au><au>Kokunai, S.</au><au>Saitoh, T.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>A new cell structure for very thin high-efficiency silicon solar cells</atitle><jtitle>IEEE transactions on electron devices</jtitle><stitle>TED</stitle><date>1990-02-01</date><risdate>1990</risdate><volume>37</volume><issue>2</issue><spage>344</spage><epage>347</epage><pages>344-347</pages><issn>0018-9383</issn><eissn>1557-9646</eissn><coden>IETDAI</coden><abstract>The cell has a corrugated structure, which is formed by aligned V grooves on both the front and back surfaces. 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| identifier | ISSN: 0018-9383 |
| ispartof | IEEE transactions on electron devices, 1990-02, Vol.37 (2), p.344-347 |
| issn | 0018-9383 1557-9646 |
| language | eng |
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| source | IEEE Electronic Library (IEL) |
| subjects | Applied sciences Charge carrier lifetime Corrugated surfaces Energy Etching Exact sciences and technology Laboratories Natural energy Optical device fabrication Photovoltaic cells Reflectivity Silicon Solar energy Solar thermal conversion Stress Voltage |
| title | A new cell structure for very thin high-efficiency silicon solar cells |
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