Fabrication and performance of GaN-based two dimensional photonic crystal surface emitting lasers

We demonstrated GaN-based two-dimensional photonic crystal surface emitting lasers with a low threshold pumping energy density of about 2.7 mJ/cm 2 and a large spontaneous coupling factor of 5times10 -3 , and lasing actions from three different band-edges.

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Hauptverfasser: Tien-Chang Lu, Tsung-Ting Kao, Shih-Wei Chen, Tzu-Wei Liu, Peichen Yu, Hao-Chung Kuo, Shing-Chung Wang, Shanhui Fan
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creator Tien-Chang Lu
Tsung-Ting Kao
Shih-Wei Chen
Tzu-Wei Liu
Peichen Yu
Hao-Chung Kuo
Shing-Chung Wang
Shanhui Fan
description We demonstrated GaN-based two-dimensional photonic crystal surface emitting lasers with a low threshold pumping energy density of about 2.7 mJ/cm 2 and a large spontaneous coupling factor of 5times10 -3 , and lasing actions from three different band-edges.
doi_str_mv 10.1109/ISLC.2008.4636072
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ispartof 2008 IEEE 21st International Semiconductor Laser Conference, 2008, p.187-188
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source IEEE Electronic Library (IEL) Conference Proceedings
subjects Gallium nitride
Laser excitation
Laser modes
Photonic crystals
Pump lasers
Surface emitting lasers
Vertical cavity surface emitting lasers
title Fabrication and performance of GaN-based two dimensional photonic crystal surface emitting lasers
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