Low-phase-noise SiGe HBT VCOs using trifilar-transformer feedback

The SiGe heterojunction bipolar transistor (HBT) voltage controlled oscillators (VCOs) using trifilar-transformer feedback at emitters, bases and collectors are demonstrated. The integrated trifilar transformer can allow dual voltage swings across the collectors and emitters of a cross-coupled diffe...

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Bibliographische Detailangaben

Hauptverfasser:	Chinchun Meng, Jin-Siang Syu, Sheng-Che Tseng, Yu-Wen Chang, Guo-Wei Huang
Format:	Tagungsbericht
Sprache:	eng
Schlagworte:	CMOS integrated circuits Heterojunction bipolar transistors Inductors Oscillators Phase noise SiGe heterojunction bipolar transistor (HBT) Silicon germanium trifilar transformer voltage controlled oscillator (VCO) Voltage-controlled oscillators
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