Scattering of the MRI field at 1.5T by a Vagus Nerve Stimulation implant

Scattering of the MRI field at 1.5T by a Vagus Nerve Stimulation implant

We have investigated the scattering of the magnetic resonance imaging (MRI) RF electromagnetic field by implants for vagus nerve stimulation (VNS) therapy using the finite element method to perform full 3-D realistic simulations. For an implanted VNS lead, we calculated the RF scattered field and th...

Ausführliche Beschreibung

Gespeichert in:
Bibliographische Detailangaben
Hauptverfasser: Mohsin, S.A., Saeed, U., Nyenhuis, J., Sheikh, N.M.
Format: Tagungsbericht
Sprache:eng
Schlagworte:
Electrodes
Finite element methods
Heating
Lead
Magnetic resonance imaging
Temperature distribution
Wire
Online-Zugang:Volltext bestellen
Tags: Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
container_end_page 4
container_issue
container_start_page 1
container_title
container_volume
creator Mohsin, S.A.
Saeed, U.
Nyenhuis, J.
Sheikh, N.M.
description We have investigated the scattering of the magnetic resonance imaging (MRI) RF electromagnetic field by implants for vagus nerve stimulation (VNS) therapy using the finite element method to perform full 3-D realistic simulations. For an implanted VNS lead, we calculated the RF scattered field and the heat equation was solved using an FEM tool to find the temperature rise. Current distributions in the twin-strand lead, specific absorption rate (SAR) and temperature rise distributions are presented.
doi_str_mv 10.1109/APS.2008.4619677
format Conference Proceeding
fullrecord <record><control><sourceid>ieee_6IE</sourceid><recordid>TN_cdi_ieee_primary_4619677</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><ieee_id>4619677</ieee_id><sourcerecordid>4619677</sourcerecordid><originalsourceid>FETCH-LOGICAL-i90t-bf5aa44002696d08866769c0d04f5516a62600722bea517faa08ecf55d1655503</originalsourceid><addsrcrecordid>eNo10EtrwkAUBeDpQ2i07gvdzB9Ieu9k5k5mKdJWwT6o0q1ck4mdEh8kY8F_X6F2dRYfnANHiDuEDBHcw-h9nimAItOEjqy9EENnC9RKawVa4aVI0GmbonZ4Jfr_gOb6BEapNHdkeiJxkJKG3Nkb0e-6bwCVWzSJmMxLjtG3YbuWu1rGLy9fPqayDr6pJEeJmVnI1VGy_OT1oZOvvv3xch7D5tBwDLutDJt9w9t4K3o1N50fnnMgFk-Pi_Eknb09T8ejWRocxHRVG2atT_PkqIKiILLkSqhA18YgMSkCsEqtPBu0NTMUvjxRhWSMgXwg7v9qg_d-uW_Dhtvj8nxO_gtLBU7w</addsrcrecordid><sourcetype>Publisher</sourcetype><iscdi>true</iscdi><recordtype>conference_proceeding</recordtype></control><display><type>conference_proceeding</type><title>Scattering of the MRI field at 1.5T by a Vagus Nerve Stimulation implant</title><source>IEEE Electronic Library (IEL) Conference Proceedings</source><creator>Mohsin, S.A. ; Saeed, U. ; Nyenhuis, J. ; Sheikh, N.M.</creator><creatorcontrib>Mohsin, S.A. ; Saeed, U. ; Nyenhuis, J. ; Sheikh, N.M.</creatorcontrib><description>We have investigated the scattering of the magnetic resonance imaging (MRI) RF electromagnetic field by implants for vagus nerve stimulation (VNS) therapy using the finite element method to perform full 3-D realistic simulations. For an implanted VNS lead, we calculated the RF scattered field and the heat equation was solved using an FEM tool to find the temperature rise. Current distributions in the twin-strand lead, specific absorption rate (SAR) and temperature rise distributions are presented.</description><identifier>ISSN: 1522-3965</identifier><identifier>ISBN: 1424420415</identifier><identifier>ISBN: 9781424420414</identifier><identifier>EISSN: 1947-1491</identifier><identifier>EISBN: 9781424420421</identifier><identifier>EISBN: 1424420423</identifier><identifier>DOI: 10.1109/APS.2008.4619677</identifier><identifier>LCCN: 90-640397</identifier><language>eng</language><publisher>IEEE</publisher><subject>Electrodes ; Finite element methods ; Heating ; Lead ; Magnetic resonance imaging ; Temperature distribution ; Wire</subject><ispartof>2008 IEEE Antennas and Propagation Society International Symposium, 2008, p.1-4</ispartof><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://ieeexplore.ieee.org/document/4619677$$EHTML$$P50$$Gieee$$H</linktohtml><link.rule.ids>309,310,780,784,789,790,2058,27925,54920</link.rule.ids><linktorsrc>$$Uhttps://ieeexplore.ieee.org/document/4619677$$EView_record_in_IEEE$$FView_record_in_$$GIEEE</linktorsrc></links><search><creatorcontrib>Mohsin, S.A.</creatorcontrib><creatorcontrib>Saeed, U.</creatorcontrib><creatorcontrib>Nyenhuis, J.</creatorcontrib><creatorcontrib>Sheikh, N.M.</creatorcontrib><title>Scattering of the MRI field at 1.5T by a Vagus Nerve Stimulation implant</title><title>2008 IEEE Antennas and Propagation Society International Symposium</title><addtitle>APS</addtitle><description>We have investigated the scattering of the magnetic resonance imaging (MRI) RF electromagnetic field by implants for vagus nerve stimulation (VNS) therapy using the finite element method to perform full 3-D realistic simulations. For an implanted VNS lead, we calculated the RF scattered field and the heat equation was solved using an FEM tool to find the temperature rise. Current distributions in the twin-strand lead, specific absorption rate (SAR) and temperature rise distributions are presented.</description><subject>Electrodes</subject><subject>Finite element methods</subject><subject>Heating</subject><subject>Lead</subject><subject>Magnetic resonance imaging</subject><subject>Temperature distribution</subject><subject>Wire</subject><issn>1522-3965</issn><issn>1947-1491</issn><isbn>1424420415</isbn><isbn>9781424420414</isbn><isbn>9781424420421</isbn><isbn>1424420423</isbn><fulltext>true</fulltext><rsrctype>conference_proceeding</rsrctype><creationdate>2008</creationdate><recordtype>conference_proceeding</recordtype><sourceid>6IE</sourceid><sourceid>RIE</sourceid><recordid>eNo10EtrwkAUBeDpQ2i07gvdzB9Ieu9k5k5mKdJWwT6o0q1ck4mdEh8kY8F_X6F2dRYfnANHiDuEDBHcw-h9nimAItOEjqy9EENnC9RKawVa4aVI0GmbonZ4Jfr_gOb6BEapNHdkeiJxkJKG3Nkb0e-6bwCVWzSJmMxLjtG3YbuWu1rGLy9fPqayDr6pJEeJmVnI1VGy_OT1oZOvvv3xch7D5tBwDLutDJt9w9t4K3o1N50fnnMgFk-Pi_Eknb09T8ejWRocxHRVG2atT_PkqIKiILLkSqhA18YgMSkCsEqtPBu0NTMUvjxRhWSMgXwg7v9qg_d-uW_Dhtvj8nxO_gtLBU7w</recordid><startdate>200807</startdate><enddate>200807</enddate><creator>Mohsin, S.A.</creator><creator>Saeed, U.</creator><creator>Nyenhuis, J.</creator><creator>Sheikh, N.M.</creator><general>IEEE</general><scope>6IE</scope><scope>6IH</scope><scope>CBEJK</scope><scope>RIE</scope><scope>RIO</scope></search><sort><creationdate>200807</creationdate><title>Scattering of the MRI field at 1.5T by a Vagus Nerve Stimulation implant</title><author>Mohsin, S.A. ; Saeed, U. ; Nyenhuis, J. ; Sheikh, N.M.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-i90t-bf5aa44002696d08866769c0d04f5516a62600722bea517faa08ecf55d1655503</frbrgroupid><rsrctype>conference_proceedings</rsrctype><prefilter>conference_proceedings</prefilter><language>eng</language><creationdate>2008</creationdate><topic>Electrodes</topic><topic>Finite element methods</topic><topic>Heating</topic><topic>Lead</topic><topic>Magnetic resonance imaging</topic><topic>Temperature distribution</topic><topic>Wire</topic><toplevel>online_resources</toplevel><creatorcontrib>Mohsin, S.A.</creatorcontrib><creatorcontrib>Saeed, U.</creatorcontrib><creatorcontrib>Nyenhuis, J.</creatorcontrib><creatorcontrib>Sheikh, N.M.</creatorcontrib><collection>IEEE Electronic Library (IEL) Conference Proceedings</collection><collection>IEEE Proceedings Order Plan (POP) 1998-present by volume</collection><collection>IEEE Xplore All Conference Proceedings</collection><collection>IEEE Electronic Library (IEL)</collection><collection>IEEE Proceedings Order Plans (POP) 1998-present</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Mohsin, S.A.</au><au>Saeed, U.</au><au>Nyenhuis, J.</au><au>Sheikh, N.M.</au><format>book</format><genre>proceeding</genre><ristype>CONF</ristype><atitle>Scattering of the MRI field at 1.5T by a Vagus Nerve Stimulation implant</atitle><btitle>2008 IEEE Antennas and Propagation Society International Symposium</btitle><stitle>APS</stitle><date>2008-07</date><risdate>2008</risdate><spage>1</spage><epage>4</epage><pages>1-4</pages><issn>1522-3965</issn><eissn>1947-1491</eissn><isbn>1424420415</isbn><isbn>9781424420414</isbn><eisbn>9781424420421</eisbn><eisbn>1424420423</eisbn><abstract>We have investigated the scattering of the magnetic resonance imaging (MRI) RF electromagnetic field by implants for vagus nerve stimulation (VNS) therapy using the finite element method to perform full 3-D realistic simulations. For an implanted VNS lead, we calculated the RF scattered field and the heat equation was solved using an FEM tool to find the temperature rise. Current distributions in the twin-strand lead, specific absorption rate (SAR) and temperature rise distributions are presented.</abstract><pub>IEEE</pub><doi>10.1109/APS.2008.4619677</doi><tpages>4</tpages></addata></record>
fulltext fulltext_linktorsrc
identifier ISSN: 1522-3965
ispartof 2008 IEEE Antennas and Propagation Society International Symposium, 2008, p.1-4
issn 1522-3965
1947-1491
language eng
recordid cdi_ieee_primary_4619677
source IEEE Electronic Library (IEL) Conference Proceedings
subjects Electrodes
Finite element methods
Heating
Lead
Magnetic resonance imaging
Temperature distribution
Wire
title Scattering of the MRI field at 1.5T by a Vagus Nerve Stimulation implant
url https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-01-01T14%3A24%3A49IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-ieee_6IE&rft_val_fmt=info:ofi/fmt:kev:mtx:book&rft.genre=proceeding&rft.atitle=Scattering%20of%20the%20MRI%20field%20at%201.5T%20by%20a%20Vagus%20Nerve%20Stimulation%20implant&rft.btitle=2008%20IEEE%20Antennas%20and%20Propagation%20Society%20International%20Symposium&rft.au=Mohsin,%20S.A.&rft.date=2008-07&rft.spage=1&rft.epage=4&rft.pages=1-4&rft.issn=1522-3965&rft.eissn=1947-1491&rft.isbn=1424420415&rft.isbn_list=9781424420414&rft_id=info:doi/10.1109/APS.2008.4619677&rft_dat=%3Cieee_6IE%3E4619677%3C/ieee_6IE%3E%3Curl%3E%3C/url%3E&rft.eisbn=9781424420421&rft.eisbn_list=1424420423&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_id=info:pmid/&rft_ieee_id=4619677&rfr_iscdi=true