Ultraviolet Electroluminescence From n-ZnO-SiO -ZnO Nanocomposite/p-GaN Heterojunction Light-Emitting Diodes at Forward and Reverse Bias

Ultraviolet (UV) light-emitting diodes composed of n-ZnO:Al-SiO 2 -ZnO nanocomposite/p-GaN:Mg heterojunction were fabricated on the (0002) Al 2 O 3 substrate. A SiO 2 layer embedded with ZnO nanodots was prepared on the p-type GaN using spin-on coating of SiO 2 nanoparticles together with atomic lay...

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Veröffentlicht in:IEEE photonics technology letters 2008-11, Vol.20 (21), p.1772-1774
Hauptverfasser: Wu, M.K., Shih, Y.T., Li, W.C., Chen, H.C., Chen, M.J., Kuan, H., Yang, J.R., Shiojiri, M.
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container_end_page 1774
container_issue 21
container_start_page 1772
container_title IEEE photonics technology letters
container_volume 20
creator Wu, M.K.
Shih, Y.T.
Li, W.C.
Chen, H.C.
Chen, M.J.
Kuan, H.
Yang, J.R.
Shiojiri, M.
description Ultraviolet (UV) light-emitting diodes composed of n-ZnO:Al-SiO 2 -ZnO nanocomposite/p-GaN:Mg heterojunction were fabricated on the (0002) Al 2 O 3 substrate. A SiO 2 layer embedded with ZnO nanodots was prepared on the p-type GaN using spin-on coating of SiO 2 nanoparticles together with atomic layer deposition (ALD). An n-type Al-doped ZnO layer was deposited also by ALD. The SiO 2 -ZnO nanocomposite layer accomplishes a role of the current blocking layer and also causes, by its low refractive index, the increase in the light extraction efficiency from n-ZnO. Significant UV electroluminescence from n-ZnO was achieved at a low forward-bias current of 1.8 mA. Strong UV emission arising from impact ionization in GaN, ZnO, and GaN:Mg states was also observed at reverse breakdown bias.
doi_str_mv 10.1109/LPT.2008.2004687
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A SiO 2 layer embedded with ZnO nanodots was prepared on the p-type GaN using spin-on coating of SiO 2 nanoparticles together with atomic layer deposition (ALD). An n-type Al-doped ZnO layer was deposited also by ALD. The SiO 2 -ZnO nanocomposite layer accomplishes a role of the current blocking layer and also causes, by its low refractive index, the increase in the light extraction efficiency from n-ZnO. Significant UV electroluminescence from n-ZnO was achieved at a low forward-bias current of 1.8 mA. Strong UV emission arising from impact ionization in GaN, ZnO, and GaN:Mg states was also observed at reverse breakdown bias.</abstract><cop>New York</cop><pub>IEEE</pub><doi>10.1109/LPT.2008.2004687</doi><tpages>3</tpages></addata></record>
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subjects Atomic layer deposition
Atomic layer deposition (ALD)
Coatings
Electroluminescence
Gallium nitride
Heterojunctions
Impact ionization
Light emitting diodes
Nanoparticles
Refractive index
ultraviolet (UV) light-emitting diode (LED)
Zinc oxide
zinc oxide (ZnO)
title Ultraviolet Electroluminescence From n-ZnO-SiO -ZnO Nanocomposite/p-GaN Heterojunction Light-Emitting Diodes at Forward and Reverse Bias
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