A High-Performance Polysilicon Thin-Film Transistor Built on a Trenched Body

In this paper, a high-performance polysilicon thin-film transistor (poly-Si TFT) with a trenched body is proposed, fabricated, and studied. This new trenched TFT can be easily produced by filling and etch-back technology without destroying the channel film quality. The addition of the body trench is...

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Veröffentlicht in:	IEEE transactions on electron devices 2008-09, Vol.55 (9), p.2417-2422
Hauptverfasser:	LIN, Jyi-Tsong, HUANG, Kuo-Dong
Format:	Artikel
Sprache:	eng
Schlagworte:	Applied sciences Back-interface conduction Channels Current carriers Distance measurement Electric fields Electronics Exact sciences and technology Fabrication grain-boundary traps lateral electric field Leakage current Logic gates OFF-state leakage Semiconductor devices Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices thin film transistor (TFT) Thin film transistors Threshold voltage Transistors trenched body Trenches Voltage
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Beschreibung
Zusammenfassung:	In this paper, a high-performance polysilicon thin-film transistor (poly-Si TFT) with a trenched body is proposed, fabricated, and studied. This new trenched TFT can be easily produced by filling and etch-back technology without destroying the channel film quality. The addition of the body trench is found to reduce the off-state leakage current by 70% on average, because the trench induces a carrier scattering effect in the poly-Si grain-boundary traps, thereby affecting the leakage path. Although the off-state current is substantially reduced, the on-state current is comparable with that of a conventional TFT. Our multiple-trenched-body TFT is also shown to improve the breakdown voltage by 11%.
ISSN:	0018-9383 1557-9646
DOI:	10.1109/TED.2008.927667