Design of a High Sensitivity Capacitive Force Sensor

This paper presents the design and development of a MEMS based, capacitive sensor for micro-force measurement. The sensor has an overall dimension of 3600 μm × 1000 μm × 10 μm and was fabricated using the Micragem fabrication process. A displacement reduction mechanism is incorporated in this sensor...

Ausführliche Beschreibung

Gespeichert in:

Bibliographische Detailangaben
Hauptverfasser:	Chu, H.K., Mills, J.K., Cleghorn, W.L.
Format:	Tagungsbericht
Sprache:	eng
Schlagworte:	Capacitance Capacitive Displacement Reduction Mechanism Distance measurement Force Force measurement Force Sensor Force sensors MEMS Micragem Sensitivity Sensors
Online-Zugang:	Volltext bestellen
Tags:	Tag hinzufügen Keine Tags, Fügen Sie den ersten Tag hinzu!

container_end_page	33
container_issue
container_start_page	29
container_title
container_volume
creator	Chu, H.K. Mills, J.K. Cleghorn, W.L.
description	This paper presents the design and development of a MEMS based, capacitive sensor for micro-force measurement. The sensor has an overall dimension of 3600 μm × 1000 μm × 10 μm and was fabricated using the Micragem fabrication process. A displacement reduction mechanism is incorporated in this sensor design to increase the sensitivity of the sensor. Analysis from Finite Element software, COMSOL, confirms that a 10:1 displacement reduction ratio is achievable with this mechanism. Simulation results show that the sensor is capable of measuring a maximum force input of 11 milli-Newton, resulting from a 20-μm displacement on the sensing structure. A 6-DOF manipulator and an evaluation board were used to experimentally verify the performance the sensor. Experimental results show that a capacitance change of approximately 175 to 200 fF can be observed from a 20-μm displacement.
doi_str_mv	10.1109/NANO.2007.4601134
format	Conference Proceeding
fullrecord	<record><control><sourceid>ieee_6IE</sourceid><recordid>TN_cdi_ieee_primary_4601134</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><ieee_id>4601134</ieee_id><sourcerecordid>4601134</sourcerecordid><originalsourceid>FETCH-LOGICAL-i175t-9a923b8d393b8c3b833c754a524d6f56ed664928a9d68383989f57f7d77cc94e3</originalsourceid><addsrcrecordid>eNpVkE9LAzEUxOOfgmvtBxAv-QK7Jnlvk7xjWVsrlPagnkvMZmtEu2WzCP32rloEDzPD8IM5DGPXUhRSCrpdTVfrQglhCtRCSsATNiFjJSpEoYWVpyyThJgTWHH2jxk8_2NEI5YNM5pAgrlglym9CaGEMjJjeBdS3O5423DHF3H7yh_DLsU-fsb-wCu3d_67BD5vOx9-YNtdsVHj3lOYHHPMnuezp2qRL9f3D9V0mUdpyj4nRwpebA00uB8E4E2JrlRY66bUodYaSVlHtbZggSw1pWlMbYz3hAHG7OZ3N4YQNvsufrjusDmeAV9vFUpH</addsrcrecordid><sourcetype>Publisher</sourcetype><iscdi>true</iscdi><recordtype>conference_proceeding</recordtype></control><display><type>conference_proceeding</type><title>Design of a High Sensitivity Capacitive Force Sensor</title><source>IEEE Electronic Library (IEL) Conference Proceedings</source><creator>Chu, H.K. ; Mills, J.K. ; Cleghorn, W.L.</creator><creatorcontrib>Chu, H.K. ; Mills, J.K. ; Cleghorn, W.L.</creatorcontrib><description>This paper presents the design and development of a MEMS based, capacitive sensor for micro-force measurement. The sensor has an overall dimension of 3600 μm × 1000 μm × 10 μm and was fabricated using the Micragem fabrication process. A displacement reduction mechanism is incorporated in this sensor design to increase the sensitivity of the sensor. Analysis from Finite Element software, COMSOL, confirms that a 10:1 displacement reduction ratio is achievable with this mechanism. Simulation results show that the sensor is capable of measuring a maximum force input of 11 milli-Newton, resulting from a 20-μm displacement on the sensing structure. A 6-DOF manipulator and an evaluation board were used to experimentally verify the performance the sensor. Experimental results show that a capacitance change of approximately 175 to 200 fF can be observed from a 20-μm displacement.</description><identifier>ISSN: 1944-9399</identifier><identifier>ISBN: 9781424406074</identifier><identifier>ISBN: 1424406072</identifier><identifier>EISSN: 1944-9380</identifier><identifier>EISBN: 9781424406081</identifier><identifier>EISBN: 1424406080</identifier><identifier>DOI: 10.1109/NANO.2007.4601134</identifier><identifier>LCCN: 200693137</identifier><language>eng</language><publisher>IEEE</publisher><subject>Capacitance ; Capacitive ; Displacement Reduction Mechanism ; Distance measurement ; Force ; Force measurement ; Force Sensor ; Force sensors ; MEMS ; Micragem ; Sensitivity ; Sensors</subject><ispartof>2007 7th IEEE Conference on Nanotechnology (IEEE NANO), 2007, p.29-33</ispartof><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://ieeexplore.ieee.org/document/4601134$$EHTML$$P50$$Gieee$$H</linktohtml><link.rule.ids>309,310,777,781,786,787,2052,27906,54901</link.rule.ids><linktorsrc>$$Uhttps://ieeexplore.ieee.org/document/4601134$$EView_record_in_IEEE$$FView_record_in_$$GIEEE</linktorsrc></links><search><creatorcontrib>Chu, H.K.</creatorcontrib><creatorcontrib>Mills, J.K.</creatorcontrib><creatorcontrib>Cleghorn, W.L.</creatorcontrib><title>Design of a High Sensitivity Capacitive Force Sensor</title><title>2007 7th IEEE Conference on Nanotechnology (IEEE NANO)</title><addtitle>NANO</addtitle><description>This paper presents the design and development of a MEMS based, capacitive sensor for micro-force measurement. The sensor has an overall dimension of 3600 μm × 1000 μm × 10 μm and was fabricated using the Micragem fabrication process. A displacement reduction mechanism is incorporated in this sensor design to increase the sensitivity of the sensor. Analysis from Finite Element software, COMSOL, confirms that a 10:1 displacement reduction ratio is achievable with this mechanism. Simulation results show that the sensor is capable of measuring a maximum force input of 11 milli-Newton, resulting from a 20-μm displacement on the sensing structure. A 6-DOF manipulator and an evaluation board were used to experimentally verify the performance the sensor. Experimental results show that a capacitance change of approximately 175 to 200 fF can be observed from a 20-μm displacement.</description><subject>Capacitance</subject><subject>Capacitive</subject><subject>Displacement Reduction Mechanism</subject><subject>Distance measurement</subject><subject>Force</subject><subject>Force measurement</subject><subject>Force Sensor</subject><subject>Force sensors</subject><subject>MEMS</subject><subject>Micragem</subject><subject>Sensitivity</subject><subject>Sensors</subject><issn>1944-9399</issn><issn>1944-9380</issn><isbn>9781424406074</isbn><isbn>1424406072</isbn><isbn>9781424406081</isbn><isbn>1424406080</isbn><fulltext>true</fulltext><rsrctype>conference_proceeding</rsrctype><creationdate>2007</creationdate><recordtype>conference_proceeding</recordtype><sourceid>6IE</sourceid><sourceid>RIE</sourceid><recordid>eNpVkE9LAzEUxOOfgmvtBxAv-QK7Jnlvk7xjWVsrlPagnkvMZmtEu2WzCP32rloEDzPD8IM5DGPXUhRSCrpdTVfrQglhCtRCSsATNiFjJSpEoYWVpyyThJgTWHH2jxk8_2NEI5YNM5pAgrlglym9CaGEMjJjeBdS3O5423DHF3H7yh_DLsU-fsb-wCu3d_67BD5vOx9-YNtdsVHj3lOYHHPMnuezp2qRL9f3D9V0mUdpyj4nRwpebA00uB8E4E2JrlRY66bUodYaSVlHtbZggSw1pWlMbYz3hAHG7OZ3N4YQNvsufrjusDmeAV9vFUpH</recordid><startdate>200708</startdate><enddate>200708</enddate><creator>Chu, H.K.</creator><creator>Mills, J.K.</creator><creator>Cleghorn, W.L.</creator><general>IEEE</general><scope>6IE</scope><scope>6IH</scope><scope>CBEJK</scope><scope>RIE</scope><scope>RIO</scope></search><sort><creationdate>200708</creationdate><title>Design of a High Sensitivity Capacitive Force Sensor</title><author>Chu, H.K. ; Mills, J.K. ; Cleghorn, W.L.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-i175t-9a923b8d393b8c3b833c754a524d6f56ed664928a9d68383989f57f7d77cc94e3</frbrgroupid><rsrctype>conference_proceedings</rsrctype><prefilter>conference_proceedings</prefilter><language>eng</language><creationdate>2007</creationdate><topic>Capacitance</topic><topic>Capacitive</topic><topic>Displacement Reduction Mechanism</topic><topic>Distance measurement</topic><topic>Force</topic><topic>Force measurement</topic><topic>Force Sensor</topic><topic>Force sensors</topic><topic>MEMS</topic><topic>Micragem</topic><topic>Sensitivity</topic><topic>Sensors</topic><toplevel>online_resources</toplevel><creatorcontrib>Chu, H.K.</creatorcontrib><creatorcontrib>Mills, J.K.</creatorcontrib><creatorcontrib>Cleghorn, W.L.</creatorcontrib><collection>IEEE Electronic Library (IEL) Conference Proceedings</collection><collection>IEEE Proceedings Order Plan (POP) 1998-present by volume</collection><collection>IEEE Xplore All Conference Proceedings</collection><collection>IEEE Electronic Library (IEL)</collection><collection>IEEE Proceedings Order Plans (POP) 1998-present</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Chu, H.K.</au><au>Mills, J.K.</au><au>Cleghorn, W.L.</au><format>book</format><genre>proceeding</genre><ristype>CONF</ristype><atitle>Design of a High Sensitivity Capacitive Force Sensor</atitle><btitle>2007 7th IEEE Conference on Nanotechnology (IEEE NANO)</btitle><stitle>NANO</stitle><date>2007-08</date><risdate>2007</risdate><spage>29</spage><epage>33</epage><pages>29-33</pages><issn>1944-9399</issn><eissn>1944-9380</eissn><isbn>9781424406074</isbn><isbn>1424406072</isbn><eisbn>9781424406081</eisbn><eisbn>1424406080</eisbn><abstract>This paper presents the design and development of a MEMS based, capacitive sensor for micro-force measurement. The sensor has an overall dimension of 3600 μm × 1000 μm × 10 μm and was fabricated using the Micragem fabrication process. A displacement reduction mechanism is incorporated in this sensor design to increase the sensitivity of the sensor. Analysis from Finite Element software, COMSOL, confirms that a 10:1 displacement reduction ratio is achievable with this mechanism. Simulation results show that the sensor is capable of measuring a maximum force input of 11 milli-Newton, resulting from a 20-μm displacement on the sensing structure. A 6-DOF manipulator and an evaluation board were used to experimentally verify the performance the sensor. Experimental results show that a capacitance change of approximately 175 to 200 fF can be observed from a 20-μm displacement.</abstract><pub>IEEE</pub><doi>10.1109/NANO.2007.4601134</doi><tpages>5</tpages></addata></record>
fulltext	fulltext_linktorsrc
identifier	ISSN: 1944-9399
ispartof	2007 7th IEEE Conference on Nanotechnology (IEEE NANO), 2007, p.29-33
issn	1944-9399 1944-9380
language	eng
recordid	cdi_ieee_primary_4601134
source	IEEE Electronic Library (IEL) Conference Proceedings
subjects	Capacitance Capacitive Displacement Reduction Mechanism Distance measurement Force Force measurement Force Sensor Force sensors MEMS Micragem Sensitivity Sensors
title	Design of a High Sensitivity Capacitive Force Sensor
url	https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-01-17T18%3A17%3A24IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-ieee_6IE&rft_val_fmt=info:ofi/fmt:kev:mtx:book&rft.genre=proceeding&rft.atitle=Design%20of%20a%20High%20Sensitivity%20Capacitive%20Force%20Sensor&rft.btitle=2007%207th%20IEEE%20Conference%20on%20Nanotechnology%20(IEEE%20NANO)&rft.au=Chu,%20H.K.&rft.date=2007-08&rft.spage=29&rft.epage=33&rft.pages=29-33&rft.issn=1944-9399&rft.eissn=1944-9380&rft.isbn=9781424406074&rft.isbn_list=1424406072&rft_id=info:doi/10.1109/NANO.2007.4601134&rft_dat=%3Cieee_6IE%3E4601134%3C/ieee_6IE%3E%3Curl%3E%3C/url%3E&rft.eisbn=9781424406081&rft.eisbn_list=1424406080&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_id=info:pmid/&rft_ieee_id=4601134&rfr_iscdi=true