Drain Current Model Including Velocity Saturation for Symmetric Double-Gate MOSFETs

A drain current model is developed for a symmetrically driven undoped (or lightly doped) symmetric double-gate MOSFET (SDGFET) under the drift-diffusion transport mechanism, with velocity saturation effects being included as an integral part of the model derivation. Velocity saturation effects are m...

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Veröffentlicht in:	IEEE transactions on electron devices 2008-08, Vol.55 (8), p.2173-2180
Hauptverfasser:	Hariharan, V., Vasi, J., Rao, V.R.
Format:	Artikel
Sprache:	eng
Schlagworte:	Applied sciences Computer simulation Current Derivation Devices double-gate MOSFET (DGFET) Drains Electronics Exact sciences and technology mobility modeling MOSFETs Saturation Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices Symmetry Transistors Transport velocity saturation
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