Impact of Gate-Induced Strain on MuGFET Reliability
Hot carrier injection (HCI) reliability and negative bias temperature instability (NBTI) of multiple-gate field-effect transistors (MuGFETs) with highly tensile metal gate electrodes were investigated. The results were compared with those from control devices with poly-Si gate electrodes. It was fou...
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| Veröffentlicht in: | IEEE electron device letters 2008-08, Vol.29 (8), p.916-919 |
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| container_title | IEEE electron device letters |
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| creator | Nathanael, R. Weize Xiong Rinn Cleavelin, C. Tsu-Jae King Liu |
| description | Hot carrier injection (HCI) reliability and negative bias temperature instability (NBTI) of multiple-gate field-effect transistors (MuGFETs) with highly tensile metal gate electrodes were investigated. The results were compared with those from control devices with poly-Si gate electrodes. It was found that gate strain boosts performance without any detrimental effect on HCI or NBTI reliability, indicating MuGFET compatibility with strained silicon technology. The impact of fin width ( W fin ) scaling was also investigated. HCI reliability improves with W fin scaling, whereas NBTI reliability degrades with W fin scaling. The same W fin scaling trends were observed in both strained and unstrained devices. |
| doi_str_mv | 10.1109/LED.2008.2000944 |
| format | Article |
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The results were compared with those from control devices with poly-Si gate electrodes. It was found that gate strain boosts performance without any detrimental effect on HCI or NBTI reliability, indicating MuGFET compatibility with strained silicon technology. The impact of fin width ( W fin ) scaling was also investigated. HCI reliability improves with W fin scaling, whereas NBTI reliability degrades with W fin scaling. The same W fin scaling trends were observed in both strained and unstrained devices.</description><identifier>ISSN: 0741-3106</identifier><identifier>EISSN: 1558-0563</identifier><identifier>DOI: 10.1109/LED.2008.2000944</identifier><identifier>CODEN: EDLEDZ</identifier><language>eng</language><publisher>New York, NY: IEEE</publisher><subject>Applied sciences ; Capacitive sensors ; Carrier injection ; Degradation ; Devices ; Electrodes ; Electronics ; Exact sciences and technology ; FETs ; Gates ; Hot carrier injection ; Hot carrier injection (HCI) ; Human computer interaction ; Instability ; multiple-gate field-effect transistor (MuGFET) ; Negative bias temperature instability ; negative bias temperature instability (NBTI) ; Niobium base alloys ; Niobium compounds ; reliability ; Semiconductor electronics. Microelectronics. Optoelectronics. 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The results were compared with those from control devices with poly-Si gate electrodes. It was found that gate strain boosts performance without any detrimental effect on HCI or NBTI reliability, indicating MuGFET compatibility with strained silicon technology. The impact of fin width ( W fin ) scaling was also investigated. HCI reliability improves with W fin scaling, whereas NBTI reliability degrades with W fin scaling. The same W fin scaling trends were observed in both strained and unstrained devices.</description><subject>Applied sciences</subject><subject>Capacitive sensors</subject><subject>Carrier injection</subject><subject>Degradation</subject><subject>Devices</subject><subject>Electrodes</subject><subject>Electronics</subject><subject>Exact sciences and technology</subject><subject>FETs</subject><subject>Gates</subject><subject>Hot carrier injection</subject><subject>Hot carrier injection (HCI)</subject><subject>Human computer interaction</subject><subject>Instability</subject><subject>multiple-gate field-effect transistor (MuGFET)</subject><subject>Negative bias temperature instability</subject><subject>negative bias temperature instability (NBTI)</subject><subject>Niobium base alloys</subject><subject>Niobium compounds</subject><subject>reliability</subject><subject>Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices</subject><subject>Silicon</subject><subject>Strain</subject><subject>strained silicon</subject><subject>Titanium compounds</subject><subject>Transistors</subject><issn>0741-3106</issn><issn>1558-0563</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2008</creationdate><recordtype>article</recordtype><sourceid>RIE</sourceid><recordid>eNp9kMtLw0AQxhdRsFbvgpcgqKfozD6ym6PUWgsVwcd52e4DImlSs8nB_94NLR48eJk5zO-bme8j5BzhFhHKu9X84ZYCqLFAyfkBmaAQKgdRsEMyAckxZwjFMTmJ8RMAOZd8QthyszW2z9qQLUzv82XjButd9tZ3pmqytsmeh8Xj_D179XVl1lVd9d-n5CiYOvqzfZ-Sj0TMnvLVy2I5u1_llinW59IGtw7pFXTSBFvK4CkGRM-9A8OBqqKgHBxXzkNwhSyUpdSVayMUMuXZlNzs9m679mvwsdebKlpf16bx7RC1kgKKZJ4l8vpfknEBSpZFAi__gJ_t0DXJhS6RUsmFggTBDrJdG2Png9521cZ03xpBj2HrFLYew9b7sJPkar_XRGvq0JnGVvFXR0EwVHS8f7HjKu_975gLichL9gPLGYRs</recordid><startdate>20080801</startdate><enddate>20080801</enddate><creator>Nathanael, R.</creator><creator>Weize Xiong</creator><creator>Rinn Cleavelin, C.</creator><creator>Tsu-Jae King Liu</creator><general>IEEE</general><general>Institute of Electrical and Electronics Engineers</general><general>The Institute of Electrical and Electronics Engineers, Inc. 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Solid state devices</topic><topic>Silicon</topic><topic>Strain</topic><topic>strained silicon</topic><topic>Titanium compounds</topic><topic>Transistors</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Nathanael, R.</creatorcontrib><creatorcontrib>Weize Xiong</creatorcontrib><creatorcontrib>Rinn Cleavelin, C.</creatorcontrib><creatorcontrib>Tsu-Jae King Liu</creatorcontrib><collection>IEEE All-Society Periodicals Package (ASPP) 2005-present</collection><collection>IEEE All-Society Periodicals Package (ASPP) 1998-Present</collection><collection>IEEE Electronic Library (IEL)</collection><collection>Pascal-Francis</collection><collection>CrossRef</collection><collection>Electronics & Communications Abstracts</collection><collection>Technology Research Database</collection><collection>Advanced Technologies Database with Aerospace</collection><collection>ANTE: Abstracts in New Technology & Engineering</collection><collection>Engineering Research Database</collection><jtitle>IEEE electron device letters</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Nathanael, R.</au><au>Weize Xiong</au><au>Rinn Cleavelin, C.</au><au>Tsu-Jae King Liu</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Impact of Gate-Induced Strain on MuGFET Reliability</atitle><jtitle>IEEE electron device letters</jtitle><stitle>LED</stitle><date>2008-08-01</date><risdate>2008</risdate><volume>29</volume><issue>8</issue><spage>916</spage><epage>919</epage><pages>916-919</pages><issn>0741-3106</issn><eissn>1558-0563</eissn><coden>EDLEDZ</coden><abstract>Hot carrier injection (HCI) reliability and negative bias temperature instability (NBTI) of multiple-gate field-effect transistors (MuGFETs) with highly tensile metal gate electrodes were investigated. 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| subjects | Applied sciences Capacitive sensors Carrier injection Degradation Devices Electrodes Electronics Exact sciences and technology FETs Gates Hot carrier injection Hot carrier injection (HCI) Human computer interaction Instability multiple-gate field-effect transistor (MuGFET) Negative bias temperature instability negative bias temperature instability (NBTI) Niobium base alloys Niobium compounds reliability Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices Silicon Strain strained silicon Titanium compounds Transistors |
| title | Impact of Gate-Induced Strain on MuGFET Reliability |
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