Analysis of Si substrate damage induced by inductively coupled plasma reactor with various superposed bias frequencies

Plasma-exposed Si surface related to Si recess in source/drain region was investigated in detail for various superposed bias configurations with frequencies of 13.56 MHz and 400 kHz. Two different bias powers were utilized by an inductively coupled plasma reactor (ICP). The surface layer (SL) and th...

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Bibliographische Detailangaben

Hauptverfasser:	Nakakubo, Y., Matsuda, A., Kamei, M., Ohta, H., Eriguchi, K., Ono, K.
Format:	Tagungsbericht
Sprache:	eng
Schlagworte:	bias frequency Capacitance measurement capacitance-voltage Capacitance-voltage characteristics carrier recombination center Ellipsometry Frequency Inductors Plasma density Plasma materials processing Plasma measurements Plasma sources plasma-induced damage self-bias voltage Spectroscopy
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