Manufacturability and sustainability analysis of nano-scale manufacturing

In this project, atomic layer deposition (ALD) of Al 2 O 3 high-k dielectric films on silicon wafers is studied as a model process of nanotechnology. The ALD process uses trimethyl aluminum as the metal source and water as the oxidant.

Bibliographische Detailangaben

Hauptverfasser:	Yuan, C.Y., Dornfeld, D.
Format:	Tagungsbericht
Sprache:	eng
Schlagworte:	Aluminum oxide Atomic layer deposition High-K gate dielectrics Manufacturing Mechanical engineering Merging Performance analysis Thickness control USA Councils Water
Online-Zugang:	Volltext bestellen
Tags:	Tag hinzufügen Keine Tags, Fügen Sie den ersten Tag hinzu!