Manufacturability and sustainability analysis of nano-scale manufacturing

Manufacturability and sustainability analysis of nano-scale manufacturing

In this project, atomic layer deposition (ALD) of Al 2 O 3 high-k dielectric films on silicon wafers is studied as a model process of nanotechnology. The ALD process uses trimethyl aluminum as the metal source and water as the oxidant.

Gespeichert in:
Bibliographische Detailangaben
Hauptverfasser: Yuan, C.Y., Dornfeld, D.
Format: Tagungsbericht
Sprache:eng
Schlagworte:
Aluminum oxide
Atomic layer deposition
High-K gate dielectrics
Manufacturing
Mechanical engineering
Merging
Performance analysis
Thickness control
USA Councils
Water
Online-Zugang:Volltext bestellen
Tags: Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
Beschreibung
Zusammenfassung:In this project, atomic layer deposition (ALD) of Al 2 O 3 high-k dielectric films on silicon wafers is studied as a model process of nanotechnology. The ALD process uses trimethyl aluminum as the metal source and water as the oxidant.
ISSN:1095-2020
2378-7260
DOI:10.1109/ISEE.2008.4562860