Stress-induced defect generation in HfO2/SiO2 stacks observed by using charge pumping and low frequency noise measurements
The technique of combining the low frequency drain current noise and the frequency-dependent charge pumping techniques has been employed to extract the trap densities in both the interfacial SiO 2 layer and high-k layer in the n-type MOSFETs with HfO 2 /SiO 2 stacks. It is found that positive bias s...
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| creator | Xiong, H.D. Dawei Heh Shuo Yang Xiaoxiao Zhu Gurfinkel, M. Bersuker, G. Ioannou, D.E. Richter, C.A. Cheung, K.P. Suehle, J.S. |
| description | The technique of combining the low frequency drain current noise and the frequency-dependent charge pumping techniques has been employed to extract the trap densities in both the interfacial SiO 2 layer and high-k layer in the n-type MOSFETs with HfO 2 /SiO 2 stacks. It is found that positive bias stress creates more traps in the gate dielectric stack near the gate electrode while negative stress increases the density of traps generated in the proximity of the Si substrate. The results show that under electrical stress new traps are predominantly created close to the anode side and the degree of asymmetry is surprisingly large. |
| doi_str_mv | 10.1109/RELPHY.2008.4558905 |
| format | Conference Proceeding |
| fullrecord | <record><control><sourceid>ieee_6IE</sourceid><recordid>TN_cdi_ieee_primary_4558905</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><ieee_id>4558905</ieee_id><sourcerecordid>4558905</sourcerecordid><originalsourceid>FETCH-LOGICAL-i175t-d74acf6da35a2ec32452c1504a8c8718e8dba656bda8addb5c3d84a6b4ad22213</originalsourceid><addsrcrecordid>eNotkMtOAjEYheuFRECegE1fYKDXmc7SEBQTEozowhX5p_0Hq0zBdkaDT69GVicn35ezOISMOZtwzsrp43z5sHiZCMbMRGltSqbPyKgsDFdCKcE0y89Jn5fSZNyU_IIMTkCV7PIXaMWzgom8R_pGZLlikssrMkjpjTHBpMn75HvdRkwp88F1Fh11WKNt6RYDRmj9PlAf6KJeienarwRNLdj3RPdVwvj5q1dH2iUfttS-QtwiPXTN4a9CcHS3_6J1xI8Ogz3SsPcJaYOQuogNhjZdk14Nu4SjUw7J8-38abbIlqu7-9nNMvO80G3mCgW2zh1IDQKtFEoLyzVTYKwpuEHjKsh1Xjkw4FylrXRGQV4pcEIILodk_L_rEXFziL6BeNyc_pQ_9nhmPw</addsrcrecordid><sourcetype>Publisher</sourcetype><iscdi>true</iscdi><recordtype>conference_proceeding</recordtype></control><display><type>conference_proceeding</type><title>Stress-induced defect generation in HfO2/SiO2 stacks observed by using charge pumping and low frequency noise measurements</title><source>IEEE Electronic Library (IEL) Conference Proceedings</source><creator>Xiong, H.D. ; Dawei Heh ; Shuo Yang ; Xiaoxiao Zhu ; Gurfinkel, M. ; Bersuker, G. ; Ioannou, D.E. ; Richter, C.A. ; Cheung, K.P. ; Suehle, J.S.</creator><creatorcontrib>Xiong, H.D. ; Dawei Heh ; Shuo Yang ; Xiaoxiao Zhu ; Gurfinkel, M. ; Bersuker, G. ; Ioannou, D.E. ; Richter, C.A. ; Cheung, K.P. ; Suehle, J.S.</creatorcontrib><description>The technique of combining the low frequency drain current noise and the frequency-dependent charge pumping techniques has been employed to extract the trap densities in both the interfacial SiO 2 layer and high-k layer in the n-type MOSFETs with HfO 2 /SiO 2 stacks. It is found that positive bias stress creates more traps in the gate dielectric stack near the gate electrode while negative stress increases the density of traps generated in the proximity of the Si substrate. The results show that under electrical stress new traps are predominantly created close to the anode side and the degree of asymmetry is surprisingly large.</description><identifier>ISSN: 1541-7026</identifier><identifier>ISBN: 1424420490</identifier><identifier>ISBN: 9781424420490</identifier><identifier>EISSN: 1938-1891</identifier><identifier>EISBN: 9781424420506</identifier><identifier>EISBN: 1424420504</identifier><identifier>DOI: 10.1109/RELPHY.2008.4558905</identifier><identifier>LCCN: 82-640313</identifier><language>eng</language><publisher>IEEE</publisher><subject>1/ƒ noise ; Charge pumping ; Charge pumps ; defect generation ; Dielectric substrates ; Electrodes ; Frequency ; Hafnium oxide ; HfO 2 ; High K dielectric materials ; High-K gate dielectrics ; Low-frequency noise ; MOSFETs ; oxide trap ; Stress</subject><ispartof>2008 IEEE International Reliability Physics Symposium, 2008, p.319-323</ispartof><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://ieeexplore.ieee.org/document/4558905$$EHTML$$P50$$Gieee$$H</linktohtml><link.rule.ids>309,310,776,780,785,786,2052,27902,54895</link.rule.ids><linktorsrc>$$Uhttps://ieeexplore.ieee.org/document/4558905$$EView_record_in_IEEE$$FView_record_in_$$GIEEE</linktorsrc></links><search><creatorcontrib>Xiong, H.D.</creatorcontrib><creatorcontrib>Dawei Heh</creatorcontrib><creatorcontrib>Shuo Yang</creatorcontrib><creatorcontrib>Xiaoxiao Zhu</creatorcontrib><creatorcontrib>Gurfinkel, M.</creatorcontrib><creatorcontrib>Bersuker, G.</creatorcontrib><creatorcontrib>Ioannou, D.E.</creatorcontrib><creatorcontrib>Richter, C.A.</creatorcontrib><creatorcontrib>Cheung, K.P.</creatorcontrib><creatorcontrib>Suehle, J.S.</creatorcontrib><title>Stress-induced defect generation in HfO2/SiO2 stacks observed by using charge pumping and low frequency noise measurements</title><title>2008 IEEE International Reliability Physics Symposium</title><addtitle>RELPHY</addtitle><description>The technique of combining the low frequency drain current noise and the frequency-dependent charge pumping techniques has been employed to extract the trap densities in both the interfacial SiO 2 layer and high-k layer in the n-type MOSFETs with HfO 2 /SiO 2 stacks. It is found that positive bias stress creates more traps in the gate dielectric stack near the gate electrode while negative stress increases the density of traps generated in the proximity of the Si substrate. The results show that under electrical stress new traps are predominantly created close to the anode side and the degree of asymmetry is surprisingly large.</description><subject>1/ƒ noise</subject><subject>Charge pumping</subject><subject>Charge pumps</subject><subject>defect generation</subject><subject>Dielectric substrates</subject><subject>Electrodes</subject><subject>Frequency</subject><subject>Hafnium oxide</subject><subject>HfO 2</subject><subject>High K dielectric materials</subject><subject>High-K gate dielectrics</subject><subject>Low-frequency noise</subject><subject>MOSFETs</subject><subject>oxide trap</subject><subject>Stress</subject><issn>1541-7026</issn><issn>1938-1891</issn><isbn>1424420490</isbn><isbn>9781424420490</isbn><isbn>9781424420506</isbn><isbn>1424420504</isbn><fulltext>true</fulltext><rsrctype>conference_proceeding</rsrctype><creationdate>2008</creationdate><recordtype>conference_proceeding</recordtype><sourceid>6IE</sourceid><sourceid>RIE</sourceid><recordid>eNotkMtOAjEYheuFRECegE1fYKDXmc7SEBQTEozowhX5p_0Hq0zBdkaDT69GVicn35ezOISMOZtwzsrp43z5sHiZCMbMRGltSqbPyKgsDFdCKcE0y89Jn5fSZNyU_IIMTkCV7PIXaMWzgom8R_pGZLlikssrMkjpjTHBpMn75HvdRkwp88F1Fh11WKNt6RYDRmj9PlAf6KJeienarwRNLdj3RPdVwvj5q1dH2iUfttS-QtwiPXTN4a9CcHS3_6J1xI8Ogz3SsPcJaYOQuogNhjZdk14Nu4SjUw7J8-38abbIlqu7-9nNMvO80G3mCgW2zh1IDQKtFEoLyzVTYKwpuEHjKsh1Xjkw4FylrXRGQV4pcEIILodk_L_rEXFziL6BeNyc_pQ_9nhmPw</recordid><startdate>200804</startdate><enddate>200804</enddate><creator>Xiong, H.D.</creator><creator>Dawei Heh</creator><creator>Shuo Yang</creator><creator>Xiaoxiao Zhu</creator><creator>Gurfinkel, M.</creator><creator>Bersuker, G.</creator><creator>Ioannou, D.E.</creator><creator>Richter, C.A.</creator><creator>Cheung, K.P.</creator><creator>Suehle, J.S.</creator><general>IEEE</general><scope>6IE</scope><scope>6IH</scope><scope>CBEJK</scope><scope>RIE</scope><scope>RIO</scope></search><sort><creationdate>200804</creationdate><title>Stress-induced defect generation in HfO2/SiO2 stacks observed by using charge pumping and low frequency noise measurements</title><author>Xiong, H.D. ; Dawei Heh ; Shuo Yang ; Xiaoxiao Zhu ; Gurfinkel, M. ; Bersuker, G. ; Ioannou, D.E. ; Richter, C.A. ; Cheung, K.P. ; Suehle, J.S.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-i175t-d74acf6da35a2ec32452c1504a8c8718e8dba656bda8addb5c3d84a6b4ad22213</frbrgroupid><rsrctype>conference_proceedings</rsrctype><prefilter>conference_proceedings</prefilter><language>eng</language><creationdate>2008</creationdate><topic>1/ƒ noise</topic><topic>Charge pumping</topic><topic>Charge pumps</topic><topic>defect generation</topic><topic>Dielectric substrates</topic><topic>Electrodes</topic><topic>Frequency</topic><topic>Hafnium oxide</topic><topic>HfO 2</topic><topic>High K dielectric materials</topic><topic>High-K gate dielectrics</topic><topic>Low-frequency noise</topic><topic>MOSFETs</topic><topic>oxide trap</topic><topic>Stress</topic><toplevel>online_resources</toplevel><creatorcontrib>Xiong, H.D.</creatorcontrib><creatorcontrib>Dawei Heh</creatorcontrib><creatorcontrib>Shuo Yang</creatorcontrib><creatorcontrib>Xiaoxiao Zhu</creatorcontrib><creatorcontrib>Gurfinkel, M.</creatorcontrib><creatorcontrib>Bersuker, G.</creatorcontrib><creatorcontrib>Ioannou, D.E.</creatorcontrib><creatorcontrib>Richter, C.A.</creatorcontrib><creatorcontrib>Cheung, K.P.</creatorcontrib><creatorcontrib>Suehle, J.S.</creatorcontrib><collection>IEEE Electronic Library (IEL) Conference Proceedings</collection><collection>IEEE Proceedings Order Plan (POP) 1998-present by volume</collection><collection>IEEE Xplore All Conference Proceedings</collection><collection>IEEE Electronic Library (IEL)</collection><collection>IEEE Proceedings Order Plans (POP) 1998-present</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Xiong, H.D.</au><au>Dawei Heh</au><au>Shuo Yang</au><au>Xiaoxiao Zhu</au><au>Gurfinkel, M.</au><au>Bersuker, G.</au><au>Ioannou, D.E.</au><au>Richter, C.A.</au><au>Cheung, K.P.</au><au>Suehle, J.S.</au><format>book</format><genre>proceeding</genre><ristype>CONF</ristype><atitle>Stress-induced defect generation in HfO2/SiO2 stacks observed by using charge pumping and low frequency noise measurements</atitle><btitle>2008 IEEE International Reliability Physics Symposium</btitle><stitle>RELPHY</stitle><date>2008-04</date><risdate>2008</risdate><spage>319</spage><epage>323</epage><pages>319-323</pages><issn>1541-7026</issn><eissn>1938-1891</eissn><isbn>1424420490</isbn><isbn>9781424420490</isbn><eisbn>9781424420506</eisbn><eisbn>1424420504</eisbn><abstract>The technique of combining the low frequency drain current noise and the frequency-dependent charge pumping techniques has been employed to extract the trap densities in both the interfacial SiO 2 layer and high-k layer in the n-type MOSFETs with HfO 2 /SiO 2 stacks. It is found that positive bias stress creates more traps in the gate dielectric stack near the gate electrode while negative stress increases the density of traps generated in the proximity of the Si substrate. The results show that under electrical stress new traps are predominantly created close to the anode side and the degree of asymmetry is surprisingly large.</abstract><pub>IEEE</pub><doi>10.1109/RELPHY.2008.4558905</doi><tpages>5</tpages></addata></record> |
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| identifier | ISSN: 1541-7026 |
| ispartof | 2008 IEEE International Reliability Physics Symposium, 2008, p.319-323 |
| issn | 1541-7026 1938-1891 |
| language | eng |
| recordid | cdi_ieee_primary_4558905 |
| source | IEEE Electronic Library (IEL) Conference Proceedings |
| subjects | 1/ƒ noise Charge pumping Charge pumps defect generation Dielectric substrates Electrodes Frequency Hafnium oxide HfO 2 High K dielectric materials High-K gate dielectrics Low-frequency noise MOSFETs oxide trap Stress |
| title | Stress-induced defect generation in HfO2/SiO2 stacks observed by using charge pumping and low frequency noise measurements |
| url | https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-02-21T18%3A55%3A41IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-ieee_6IE&rft_val_fmt=info:ofi/fmt:kev:mtx:book&rft.genre=proceeding&rft.atitle=Stress-induced%20defect%20generation%20in%20HfO2/SiO2%20stacks%20observed%20by%20using%20charge%20pumping%20and%20low%20frequency%20noise%20measurements&rft.btitle=2008%20IEEE%20International%20Reliability%20Physics%20Symposium&rft.au=Xiong,%20H.D.&rft.date=2008-04&rft.spage=319&rft.epage=323&rft.pages=319-323&rft.issn=1541-7026&rft.eissn=1938-1891&rft.isbn=1424420490&rft.isbn_list=9781424420490&rft_id=info:doi/10.1109/RELPHY.2008.4558905&rft_dat=%3Cieee_6IE%3E4558905%3C/ieee_6IE%3E%3Curl%3E%3C/url%3E&rft.eisbn=9781424420506&rft.eisbn_list=1424420504&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_id=info:pmid/&rft_ieee_id=4558905&rfr_iscdi=true |