A comparative study of reliability and performance of strain engineering using CESL stressor and mechanical strain

Effects of a stressor nitride layer on device performance and reliability are investigated. To decouple intrinsic mechanical stress and process-related effects, device characteristics under mechanical bending stress and stressor layers were compared. The compressive stressor device exhibits improved...

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Hauptverfasser:	Kyong Taek Lee, Chang Yong Kang, Ook Sang Yoo, Chadwin, D., Bersuker, G., Ho Kyung Park, Jun Myung Lee, Hyung Sang Hwang, Byoung Hun Lee, Hi-Deok Lee, Yoon-Ha Jeong
Format:	Tagungsbericht
Sprache:	eng
Schlagworte:	Annealing Capacitive sensors Compressive stress Dielectric substrates Hydrogen MOS devices MOSFETs Passivation Reliability engineering Tensile stress
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creator	Kyong Taek Lee Chang Yong Kang Ook Sang Yoo Chadwin, D. Bersuker, G. Ho Kyung Park Jun Myung Lee Hyung Sang Hwang Byoung Hun Lee Hi-Deok Lee Yoon-Ha Jeong
description	Effects of a stressor nitride layer on device performance and reliability are investigated. To decouple intrinsic mechanical stress and process-related effects, device characteristics under mechanical bending stress and stressor layers were compared. The compressive stressor device exhibits improved initial interface quality, although slightly degraded reliability characteristics, due to increased hydrogen passivation of the dielectric/substrate interface. Thereby, the hydrogen passivation in the interface is found to be a primary cause of the difference in reliability characteristics.
doi_str_mv	10.1109/RELPHY.2008.4558902
format	Conference Proceeding
fullrecord	<record><control><sourceid>ieee_6IE</sourceid><recordid>TN_cdi_ieee_primary_4558902</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><ieee_id>4558902</ieee_id><sourcerecordid>4558902</sourcerecordid><originalsourceid>FETCH-LOGICAL-i175t-d5a244aeb01a744f0ca16e5033ee7aa596ed5f83e9584f1f43f1d54049325c733</originalsourceid><addsrcrecordid>eNotkMtuwjAURN0HUoHyBWz8A6HXsZ3YS4RoqRSpVR-LrtAluaau8kB2Wom_L7TZzCyOZqQZxuYCFkKAvXtZF8-bj0UKYBZKa2MhvWAzmxuhUqVS0JBdsrGw0iTCWHHFJgNQFq5PQCuR5JBmIzY2aZIpkELesEmMXwApSJONWVjysmsOGLD3P8Rj_10deed4oNrjzte-P3JsK36g4LrQYFvSGcc-oG85tXvfEgXf7vl3POtq_VqcKcXYhb9kQ-Untr7EekjdspHDOtJs8Cl7v1-_rTZJ8fTwuFoWiRe57pNK42kL0g4E5ko5KFFkpEFKohxR24wq7Ywkq41ywinpRKXVabtMdZlLOWXz_15PRNtD8A2G43b4Uf4CmFBiiA</addsrcrecordid><sourcetype>Publisher</sourcetype><iscdi>true</iscdi><recordtype>conference_proceeding</recordtype></control><display><type>conference_proceeding</type><title>A comparative study of reliability and performance of strain engineering using CESL stressor and mechanical strain</title><source>IEEE Electronic Library (IEL) Conference Proceedings</source><creator>Kyong Taek Lee ; Chang Yong Kang ; Ook Sang Yoo ; Chadwin, D. ; Bersuker, G. ; Ho Kyung Park ; Jun Myung Lee ; Hyung Sang Hwang ; Byoung Hun Lee ; Hi-Deok Lee ; Yoon-Ha Jeong</creator><creatorcontrib>Kyong Taek Lee ; Chang Yong Kang ; Ook Sang Yoo ; Chadwin, D. ; Bersuker, G. ; Ho Kyung Park ; Jun Myung Lee ; Hyung Sang Hwang ; Byoung Hun Lee ; Hi-Deok Lee ; Yoon-Ha Jeong</creatorcontrib><description>Effects of a stressor nitride layer on device performance and reliability are investigated. To decouple intrinsic mechanical stress and process-related effects, device characteristics under mechanical bending stress and stressor layers were compared. The compressive stressor device exhibits improved initial interface quality, although slightly degraded reliability characteristics, due to increased hydrogen passivation of the dielectric/substrate interface. Thereby, the hydrogen passivation in the interface is found to be a primary cause of the difference in reliability characteristics.</description><identifier>ISSN: 1541-7026</identifier><identifier>ISBN: 1424420490</identifier><identifier>ISBN: 9781424420490</identifier><identifier>EISSN: 1938-1891</identifier><identifier>EISBN: 9781424420506</identifier><identifier>EISBN: 1424420504</identifier><identifier>DOI: 10.1109/RELPHY.2008.4558902</identifier><identifier>LCCN: 82-640313</identifier><language>eng</language><publisher>IEEE</publisher><subject>Annealing ; Capacitive sensors ; Compressive stress ; Dielectric substrates ; Hydrogen ; MOS devices ; MOSFETs ; Passivation ; Reliability engineering ; Tensile stress</subject><ispartof>2008 IEEE International Reliability Physics Symposium, 2008, p.306-309</ispartof><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://ieeexplore.ieee.org/document/4558902$$EHTML$$P50$$Gieee$$H</linktohtml><link.rule.ids>309,310,776,780,785,786,2052,27902,54895</link.rule.ids><linktorsrc>$$Uhttps://ieeexplore.ieee.org/document/4558902$$EView_record_in_IEEE$$FView_record_in_$$GIEEE</linktorsrc></links><search><creatorcontrib>Kyong Taek Lee</creatorcontrib><creatorcontrib>Chang Yong Kang</creatorcontrib><creatorcontrib>Ook Sang Yoo</creatorcontrib><creatorcontrib>Chadwin, D.</creatorcontrib><creatorcontrib>Bersuker, G.</creatorcontrib><creatorcontrib>Ho Kyung Park</creatorcontrib><creatorcontrib>Jun Myung Lee</creatorcontrib><creatorcontrib>Hyung Sang Hwang</creatorcontrib><creatorcontrib>Byoung Hun Lee</creatorcontrib><creatorcontrib>Hi-Deok Lee</creatorcontrib><creatorcontrib>Yoon-Ha Jeong</creatorcontrib><title>A comparative study of reliability and performance of strain engineering using CESL stressor and mechanical strain</title><title>2008 IEEE International Reliability Physics Symposium</title><addtitle>RELPHY</addtitle><description>Effects of a stressor nitride layer on device performance and reliability are investigated. To decouple intrinsic mechanical stress and process-related effects, device characteristics under mechanical bending stress and stressor layers were compared. The compressive stressor device exhibits improved initial interface quality, although slightly degraded reliability characteristics, due to increased hydrogen passivation of the dielectric/substrate interface. Thereby, the hydrogen passivation in the interface is found to be a primary cause of the difference in reliability characteristics.</description><subject>Annealing</subject><subject>Capacitive sensors</subject><subject>Compressive stress</subject><subject>Dielectric substrates</subject><subject>Hydrogen</subject><subject>MOS devices</subject><subject>MOSFETs</subject><subject>Passivation</subject><subject>Reliability engineering</subject><subject>Tensile stress</subject><issn>1541-7026</issn><issn>1938-1891</issn><isbn>1424420490</isbn><isbn>9781424420490</isbn><isbn>9781424420506</isbn><isbn>1424420504</isbn><fulltext>true</fulltext><rsrctype>conference_proceeding</rsrctype><creationdate>2008</creationdate><recordtype>conference_proceeding</recordtype><sourceid>6IE</sourceid><sourceid>RIE</sourceid><recordid>eNotkMtuwjAURN0HUoHyBWz8A6HXsZ3YS4RoqRSpVR-LrtAluaau8kB2Wom_L7TZzCyOZqQZxuYCFkKAvXtZF8-bj0UKYBZKa2MhvWAzmxuhUqVS0JBdsrGw0iTCWHHFJgNQFq5PQCuR5JBmIzY2aZIpkELesEmMXwApSJONWVjysmsOGLD3P8Rj_10deed4oNrjzte-P3JsK36g4LrQYFvSGcc-oG85tXvfEgXf7vl3POtq_VqcKcXYhb9kQ-Untr7EekjdspHDOtJs8Cl7v1-_rTZJ8fTwuFoWiRe57pNK42kL0g4E5ko5KFFkpEFKohxR24wq7Ywkq41ywinpRKXVabtMdZlLOWXz_15PRNtD8A2G43b4Uf4CmFBiiA</recordid><startdate>200804</startdate><enddate>200804</enddate><creator>Kyong Taek Lee</creator><creator>Chang Yong Kang</creator><creator>Ook Sang Yoo</creator><creator>Chadwin, D.</creator><creator>Bersuker, G.</creator><creator>Ho Kyung Park</creator><creator>Jun Myung Lee</creator><creator>Hyung Sang Hwang</creator><creator>Byoung Hun Lee</creator><creator>Hi-Deok Lee</creator><creator>Yoon-Ha Jeong</creator><general>IEEE</general><scope>6IE</scope><scope>6IH</scope><scope>CBEJK</scope><scope>RIE</scope><scope>RIO</scope></search><sort><creationdate>200804</creationdate><title>A comparative study of reliability and performance of strain engineering using CESL stressor and mechanical strain</title><author>Kyong Taek Lee ; Chang Yong Kang ; Ook Sang Yoo ; Chadwin, D. ; Bersuker, G. ; Ho Kyung Park ; Jun Myung Lee ; Hyung Sang Hwang ; Byoung Hun Lee ; Hi-Deok Lee ; Yoon-Ha Jeong</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-i175t-d5a244aeb01a744f0ca16e5033ee7aa596ed5f83e9584f1f43f1d54049325c733</frbrgroupid><rsrctype>conference_proceedings</rsrctype><prefilter>conference_proceedings</prefilter><language>eng</language><creationdate>2008</creationdate><topic>Annealing</topic><topic>Capacitive sensors</topic><topic>Compressive stress</topic><topic>Dielectric substrates</topic><topic>Hydrogen</topic><topic>MOS devices</topic><topic>MOSFETs</topic><topic>Passivation</topic><topic>Reliability engineering</topic><topic>Tensile stress</topic><toplevel>online_resources</toplevel><creatorcontrib>Kyong Taek Lee</creatorcontrib><creatorcontrib>Chang Yong Kang</creatorcontrib><creatorcontrib>Ook Sang Yoo</creatorcontrib><creatorcontrib>Chadwin, D.</creatorcontrib><creatorcontrib>Bersuker, G.</creatorcontrib><creatorcontrib>Ho Kyung Park</creatorcontrib><creatorcontrib>Jun Myung Lee</creatorcontrib><creatorcontrib>Hyung Sang Hwang</creatorcontrib><creatorcontrib>Byoung Hun Lee</creatorcontrib><creatorcontrib>Hi-Deok Lee</creatorcontrib><creatorcontrib>Yoon-Ha Jeong</creatorcontrib><collection>IEEE Electronic Library (IEL) Conference Proceedings</collection><collection>IEEE Proceedings Order Plan (POP) 1998-present by volume</collection><collection>IEEE Xplore All Conference Proceedings</collection><collection>IEEE Electronic Library (IEL)</collection><collection>IEEE Proceedings Order Plans (POP) 1998-present</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Kyong Taek Lee</au><au>Chang Yong Kang</au><au>Ook Sang Yoo</au><au>Chadwin, D.</au><au>Bersuker, G.</au><au>Ho Kyung Park</au><au>Jun Myung Lee</au><au>Hyung Sang Hwang</au><au>Byoung Hun Lee</au><au>Hi-Deok Lee</au><au>Yoon-Ha Jeong</au><format>book</format><genre>proceeding</genre><ristype>CONF</ristype><atitle>A comparative study of reliability and performance of strain engineering using CESL stressor and mechanical strain</atitle><btitle>2008 IEEE International Reliability Physics Symposium</btitle><stitle>RELPHY</stitle><date>2008-04</date><risdate>2008</risdate><spage>306</spage><epage>309</epage><pages>306-309</pages><issn>1541-7026</issn><eissn>1938-1891</eissn><isbn>1424420490</isbn><isbn>9781424420490</isbn><eisbn>9781424420506</eisbn><eisbn>1424420504</eisbn><abstract>Effects of a stressor nitride layer on device performance and reliability are investigated. To decouple intrinsic mechanical stress and process-related effects, device characteristics under mechanical bending stress and stressor layers were compared. The compressive stressor device exhibits improved initial interface quality, although slightly degraded reliability characteristics, due to increased hydrogen passivation of the dielectric/substrate interface. Thereby, the hydrogen passivation in the interface is found to be a primary cause of the difference in reliability characteristics.</abstract><pub>IEEE</pub><doi>10.1109/RELPHY.2008.4558902</doi><tpages>4</tpages></addata></record>
fulltext	fulltext_linktorsrc
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ispartof	2008 IEEE International Reliability Physics Symposium, 2008, p.306-309
issn	1541-7026 1938-1891
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source	IEEE Electronic Library (IEL) Conference Proceedings
subjects	Annealing Capacitive sensors Compressive stress Dielectric substrates Hydrogen MOS devices MOSFETs Passivation Reliability engineering Tensile stress
title	A comparative study of reliability and performance of strain engineering using CESL stressor and mechanical strain
url	https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-02-04T20%3A04%3A46IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-ieee_6IE&rft_val_fmt=info:ofi/fmt:kev:mtx:book&rft.genre=proceeding&rft.atitle=A%20comparative%20study%20of%20reliability%20and%20performance%20of%20strain%20engineering%20using%20CESL%20stressor%20and%20mechanical%20strain&rft.btitle=2008%20IEEE%20International%20Reliability%20Physics%20Symposium&rft.au=Kyong%20Taek%20Lee&rft.date=2008-04&rft.spage=306&rft.epage=309&rft.pages=306-309&rft.issn=1541-7026&rft.eissn=1938-1891&rft.isbn=1424420490&rft.isbn_list=9781424420490&rft_id=info:doi/10.1109/RELPHY.2008.4558902&rft_dat=%3Cieee_6IE%3E4558902%3C/ieee_6IE%3E%3Curl%3E%3C/url%3E&rft.eisbn=9781424420506&rft.eisbn_list=1424420504&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_id=info:pmid/&rft_ieee_id=4558902&rfr_iscdi=true