Key factors to sustain the extension of a MHM-based integration scheme to medium and high porosity PECVD low-k materials
Interconnect solutions for advanced technology nodes using PECVD techniques for low-k deposition require the use of porogen-based process with post deposition UV cure. By using two different UV cure lamps (A, B) in combination with different porogen loads, three different micro-porous low-k films ar...
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creator | Travaly, Y. van Aelst, J. Truffert, V. Verdonck, P. Dupont, T. Camerotto, E. Richard, O. Bender, H. Kroes, C. de Roest, D. Vereecke, G. Claes, M. Le, Q. T. Kesters, E. van Cauwenberghe, M. Beynet, J. Kaneko, S. Struyf, H. Baklanov, M. Matsushita, K. Kobayashi, N. Sprey, H. Beyer, G. |
description | Interconnect solutions for advanced technology nodes using PECVD techniques for low-k deposition require the use of porogen-based process with post deposition UV cure. By using two different UV cure lamps (A, B) in combination with different porogen loads, three different micro-porous low-k films are developed: Aurora® ELK HM (k~2.5; porosity (P) ~25%), Aurora® ELK A (k~2.3; P~34%) and Aurora® ELK B (k~2.2; P~37%). Integrating these materials is complex and challenging. We discuss key factors that are instrumental to the extension of a metal hard mask (MHM)-based integration scheme to these 3 low-k films. Our findings: (I) for sub-100nm dimensions, patterning and low-k interactions affect the dynamic of organic residue formation and thereby impact electrical yield; (II) choosing the right ash, etch and clean sequence is mandatory to control plasma damage, profile, residues and corrosion on top of the MHM; (III) Cu reduction plasmas must be adjusted when porosity is increased to mitigate field damage. |
doi_str_mv | 10.1109/IITC.2008.4546923 |
format | Conference Proceeding |
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T. ; Kesters, E. ; van Cauwenberghe, M. ; Beynet, J. ; Kaneko, S. ; Struyf, H. ; Baklanov, M. ; Matsushita, K. ; Kobayashi, N. ; Sprey, H. ; Beyer, G.</creator><creatorcontrib>Travaly, Y. ; van Aelst, J. ; Truffert, V. ; Verdonck, P. ; Dupont, T. ; Camerotto, E. ; Richard, O. ; Bender, H. ; Kroes, C. ; de Roest, D. ; Vereecke, G. ; Claes, M. ; Le, Q. T. ; Kesters, E. ; van Cauwenberghe, M. ; Beynet, J. ; Kaneko, S. ; Struyf, H. ; Baklanov, M. ; Matsushita, K. ; Kobayashi, N. ; Sprey, H. ; Beyer, G.</creatorcontrib><description>Interconnect solutions for advanced technology nodes using PECVD techniques for low-k deposition require the use of porogen-based process with post deposition UV cure. By using two different UV cure lamps (A, B) in combination with different porogen loads, three different micro-porous low-k films are developed: Aurora® ELK HM (k~2.5; porosity (P) ~25%), Aurora® ELK A (k~2.3; P~34%) and Aurora® ELK B (k~2.2; P~37%). Integrating these materials is complex and challenging. We discuss key factors that are instrumental to the extension of a metal hard mask (MHM)-based integration scheme to these 3 low-k films. Our findings: (I) for sub-100nm dimensions, patterning and low-k interactions affect the dynamic of organic residue formation and thereby impact electrical yield; (II) choosing the right ash, etch and clean sequence is mandatory to control plasma damage, profile, residues and corrosion on top of the MHM; (III) Cu reduction plasmas must be adjusted when porosity is increased to mitigate field damage.</description><identifier>ISSN: 2380-632X</identifier><identifier>ISBN: 1424419115</identifier><identifier>ISBN: 9781424419111</identifier><identifier>EISSN: 2380-6338</identifier><identifier>EISBN: 9781424419128</identifier><identifier>EISBN: 1424419123</identifier><identifier>DOI: 10.1109/IITC.2008.4546923</identifier><identifier>LCCN: 2007908979</identifier><language>eng</language><publisher>IEEE</publisher><subject>Ash ; Corrosion ; Dielectrics ; Instruments ; Lamps ; Plasma applications ; Plasma chemistry ; Polymer films ; Resists ; Wet etching</subject><ispartof>2008 International Interconnect Technology Conference, 2008, p.52-54</ispartof><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://ieeexplore.ieee.org/document/4546923$$EHTML$$P50$$Gieee$$H</linktohtml><link.rule.ids>309,310,777,781,786,787,2052,27906,54901</link.rule.ids><linktorsrc>$$Uhttps://ieeexplore.ieee.org/document/4546923$$EView_record_in_IEEE$$FView_record_in_$$GIEEE</linktorsrc></links><search><creatorcontrib>Travaly, Y.</creatorcontrib><creatorcontrib>van Aelst, J.</creatorcontrib><creatorcontrib>Truffert, V.</creatorcontrib><creatorcontrib>Verdonck, P.</creatorcontrib><creatorcontrib>Dupont, T.</creatorcontrib><creatorcontrib>Camerotto, E.</creatorcontrib><creatorcontrib>Richard, O.</creatorcontrib><creatorcontrib>Bender, H.</creatorcontrib><creatorcontrib>Kroes, C.</creatorcontrib><creatorcontrib>de Roest, D.</creatorcontrib><creatorcontrib>Vereecke, G.</creatorcontrib><creatorcontrib>Claes, M.</creatorcontrib><creatorcontrib>Le, Q. T.</creatorcontrib><creatorcontrib>Kesters, E.</creatorcontrib><creatorcontrib>van Cauwenberghe, M.</creatorcontrib><creatorcontrib>Beynet, J.</creatorcontrib><creatorcontrib>Kaneko, S.</creatorcontrib><creatorcontrib>Struyf, H.</creatorcontrib><creatorcontrib>Baklanov, M.</creatorcontrib><creatorcontrib>Matsushita, K.</creatorcontrib><creatorcontrib>Kobayashi, N.</creatorcontrib><creatorcontrib>Sprey, H.</creatorcontrib><creatorcontrib>Beyer, G.</creatorcontrib><title>Key factors to sustain the extension of a MHM-based integration scheme to medium and high porosity PECVD low-k materials</title><title>2008 International Interconnect Technology Conference</title><addtitle>IITC</addtitle><description>Interconnect solutions for advanced technology nodes using PECVD techniques for low-k deposition require the use of porogen-based process with post deposition UV cure. By using two different UV cure lamps (A, B) in combination with different porogen loads, three different micro-porous low-k films are developed: Aurora® ELK HM (k~2.5; porosity (P) ~25%), Aurora® ELK A (k~2.3; P~34%) and Aurora® ELK B (k~2.2; P~37%). Integrating these materials is complex and challenging. We discuss key factors that are instrumental to the extension of a metal hard mask (MHM)-based integration scheme to these 3 low-k films. Our findings: (I) for sub-100nm dimensions, patterning and low-k interactions affect the dynamic of organic residue formation and thereby impact electrical yield; (II) choosing the right ash, etch and clean sequence is mandatory to control plasma damage, profile, residues and corrosion on top of the MHM; (III) Cu reduction plasmas must be adjusted when porosity is increased to mitigate field damage.</description><subject>Ash</subject><subject>Corrosion</subject><subject>Dielectrics</subject><subject>Instruments</subject><subject>Lamps</subject><subject>Plasma applications</subject><subject>Plasma chemistry</subject><subject>Polymer films</subject><subject>Resists</subject><subject>Wet etching</subject><issn>2380-632X</issn><issn>2380-6338</issn><isbn>1424419115</isbn><isbn>9781424419111</isbn><isbn>9781424419128</isbn><isbn>1424419123</isbn><fulltext>true</fulltext><rsrctype>conference_proceeding</rsrctype><creationdate>2008</creationdate><recordtype>conference_proceeding</recordtype><sourceid>6IE</sourceid><sourceid>RIE</sourceid><recordid>eNo9kM1OAjEUhesPiYA8gHFzX2CwnbYz7dIgChGiCzTuSJneYarMDJmWCG_vENGz-RZfzlkcQm4YHTJG9d10uhgNY0rVUEiR6JifkYFOFROxEEyzWJ2TbswVjRLO1QXp_QkmL_9F_NEhvXYj1VTpVF-RgfeftI2QPE54l-yf8QC5yULdeAg1-J0PxlUQCgTcB6y8qyuoczAwn8yjlfFowVUB140JR-WzAks8Vku0bleCqSwUbl3Atm5q78IBXsej9wfY1N_RF5QmYOPMxl-TTt4CByf2ydvjeDGaRLOXp-nofhY5lsoQaW6NNRlyLYTMmJKWZi0yxhKRsJyiVpKbzOiVVkprK42kq9xylQqBPKG8T25_dx0iLreNK01zWJ4e5T-7pWPq</recordid><startdate>200806</startdate><enddate>200806</enddate><creator>Travaly, Y.</creator><creator>van Aelst, J.</creator><creator>Truffert, V.</creator><creator>Verdonck, P.</creator><creator>Dupont, T.</creator><creator>Camerotto, E.</creator><creator>Richard, O.</creator><creator>Bender, H.</creator><creator>Kroes, C.</creator><creator>de Roest, D.</creator><creator>Vereecke, G.</creator><creator>Claes, M.</creator><creator>Le, Q. 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T. ; Kesters, E. ; van Cauwenberghe, M. ; Beynet, J. ; Kaneko, S. ; Struyf, H. ; Baklanov, M. ; Matsushita, K. ; Kobayashi, N. ; Sprey, H. ; Beyer, G.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-i175t-93dadace39445c185d0cc18c116461f0e9853aca9b98899d5a50bfd38744e3603</frbrgroupid><rsrctype>conference_proceedings</rsrctype><prefilter>conference_proceedings</prefilter><language>eng</language><creationdate>2008</creationdate><topic>Ash</topic><topic>Corrosion</topic><topic>Dielectrics</topic><topic>Instruments</topic><topic>Lamps</topic><topic>Plasma applications</topic><topic>Plasma chemistry</topic><topic>Polymer films</topic><topic>Resists</topic><topic>Wet etching</topic><toplevel>online_resources</toplevel><creatorcontrib>Travaly, Y.</creatorcontrib><creatorcontrib>van Aelst, J.</creatorcontrib><creatorcontrib>Truffert, V.</creatorcontrib><creatorcontrib>Verdonck, P.</creatorcontrib><creatorcontrib>Dupont, T.</creatorcontrib><creatorcontrib>Camerotto, E.</creatorcontrib><creatorcontrib>Richard, O.</creatorcontrib><creatorcontrib>Bender, H.</creatorcontrib><creatorcontrib>Kroes, C.</creatorcontrib><creatorcontrib>de Roest, D.</creatorcontrib><creatorcontrib>Vereecke, G.</creatorcontrib><creatorcontrib>Claes, M.</creatorcontrib><creatorcontrib>Le, Q. T.</creatorcontrib><creatorcontrib>Kesters, E.</creatorcontrib><creatorcontrib>van Cauwenberghe, M.</creatorcontrib><creatorcontrib>Beynet, J.</creatorcontrib><creatorcontrib>Kaneko, S.</creatorcontrib><creatorcontrib>Struyf, H.</creatorcontrib><creatorcontrib>Baklanov, M.</creatorcontrib><creatorcontrib>Matsushita, K.</creatorcontrib><creatorcontrib>Kobayashi, N.</creatorcontrib><creatorcontrib>Sprey, H.</creatorcontrib><creatorcontrib>Beyer, G.</creatorcontrib><collection>IEEE Electronic Library (IEL) Conference Proceedings</collection><collection>IEEE Proceedings Order Plan All Online (POP All Online) 1998-present by volume</collection><collection>IEEE Xplore All Conference Proceedings</collection><collection>IEEE Electronic Library (IEL)</collection><collection>IEEE Proceedings Order Plans (POP All) 1998-Present</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Travaly, Y.</au><au>van Aelst, J.</au><au>Truffert, V.</au><au>Verdonck, P.</au><au>Dupont, T.</au><au>Camerotto, E.</au><au>Richard, O.</au><au>Bender, H.</au><au>Kroes, C.</au><au>de Roest, D.</au><au>Vereecke, G.</au><au>Claes, M.</au><au>Le, Q. T.</au><au>Kesters, E.</au><au>van Cauwenberghe, M.</au><au>Beynet, J.</au><au>Kaneko, S.</au><au>Struyf, H.</au><au>Baklanov, M.</au><au>Matsushita, K.</au><au>Kobayashi, N.</au><au>Sprey, H.</au><au>Beyer, G.</au><format>book</format><genre>proceeding</genre><ristype>CONF</ristype><atitle>Key factors to sustain the extension of a MHM-based integration scheme to medium and high porosity PECVD low-k materials</atitle><btitle>2008 International Interconnect Technology Conference</btitle><stitle>IITC</stitle><date>2008-06</date><risdate>2008</risdate><spage>52</spage><epage>54</epage><pages>52-54</pages><issn>2380-632X</issn><eissn>2380-6338</eissn><isbn>1424419115</isbn><isbn>9781424419111</isbn><eisbn>9781424419128</eisbn><eisbn>1424419123</eisbn><abstract>Interconnect solutions for advanced technology nodes using PECVD techniques for low-k deposition require the use of porogen-based process with post deposition UV cure. By using two different UV cure lamps (A, B) in combination with different porogen loads, three different micro-porous low-k films are developed: Aurora® ELK HM (k~2.5; porosity (P) ~25%), Aurora® ELK A (k~2.3; P~34%) and Aurora® ELK B (k~2.2; P~37%). Integrating these materials is complex and challenging. We discuss key factors that are instrumental to the extension of a metal hard mask (MHM)-based integration scheme to these 3 low-k films. Our findings: (I) for sub-100nm dimensions, patterning and low-k interactions affect the dynamic of organic residue formation and thereby impact electrical yield; (II) choosing the right ash, etch and clean sequence is mandatory to control plasma damage, profile, residues and corrosion on top of the MHM; (III) Cu reduction plasmas must be adjusted when porosity is increased to mitigate field damage.</abstract><pub>IEEE</pub><doi>10.1109/IITC.2008.4546923</doi><tpages>3</tpages></addata></record> |
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subjects | Ash Corrosion Dielectrics Instruments Lamps Plasma applications Plasma chemistry Polymer films Resists Wet etching |
title | Key factors to sustain the extension of a MHM-based integration scheme to medium and high porosity PECVD low-k materials |
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