A simple modeling of the early voltage of MOSFETs in weak and moderate inversion

A simple modeling of the early voltage of MOSFETs in weak and moderate inversion

This paper presents a simple model of the Early voltage for the MOS transistor operating in weak and moderate inversion. The model is based on a decomposition of the transistor channel into a region where the gradual-channel approximation holds and a region that is modeled as a reverse-biased juntio...

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Hauptverfasser: Radin, R. L., Moreira, G. L., Galup-Montoro, C., Schneider, M. C.
Format: Tagungsbericht
Sprache:eng
Schlagworte:
Capacitance measurement
Channel bank filters
Current measurement
Electrostatic analysis
Electrostatic measurements
Length measurement
MOSFETs
Semiconductor device modeling
Surface fitting
Voltage
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Beschreibung
Zusammenfassung:This paper presents a simple model of the Early voltage for the MOS transistor operating in weak and moderate inversion. The model is based on a decomposition of the transistor channel into a region where the gradual-channel approximation holds and a region that is modeled as a reverse-biased juntion. Measurements of the characteristics of both nand p-channel transistors with different channel lengths in a 0.35 μm technology demonstrate the feasibility of the proposed model.
ISSN:0271-4302
2158-1525
DOI:10.1109/ISCAS.2008.4541769