Mechanism of nickel disilicide growth caused by RIE plasma-induced damage on silicon substrate

Effects of dry-etching damage at the surface of p-type silicon on pyramidal spike growth of nickel disilicide (NiSi 2 ) were investigated by using sheet resistance (Rs) measurement, cross sectional SEM7TEM, UV Raman spectroscopy and elastic recoil detection analysis (ERDA), and as a result, a model...

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Hauptverfasser:	Kashihara, K., Kihara, K., Yamaguchi, T., Okudaira, T., Tsutsumi, T., Maekawa, K., Sakamori, S., Matsumoto, J., Yokoi, T., Asai, K., Kojima, M.
Format:	Tagungsbericht
Sprache:	eng
Schlagworte:	Electrical resistance measurement Nickel Plasma applications Plasma immersion ion implantation Plasma measurements Raman scattering Shape Silicon Spectroscopy Surface resistance
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