Mechanism of nickel disilicide growth caused by RIE plasma-induced damage on silicon substrate
Effects of dry-etching damage at the surface of p-type silicon on pyramidal spike growth of nickel disilicide (NiSi 2 ) were investigated by using sheet resistance (Rs) measurement, cross sectional SEM7TEM, UV Raman spectroscopy and elastic recoil detection analysis (ERDA), and as a result, a model...
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| creator | Kashihara, K. Kihara, K. Yamaguchi, T. Okudaira, T. Tsutsumi, T. Maekawa, K. Sakamori, S. Matsumoto, J. Yokoi, T. Asai, K. Kojima, M. |
| description | Effects of dry-etching damage at the surface of p-type silicon on pyramidal spike growth of nickel disilicide (NiSi 2 ) were investigated by using sheet resistance (Rs) measurement, cross sectional SEM7TEM, UV Raman spectroscopy and elastic recoil detection analysis (ERDA), and as a result, a model for nickel diffusion induced by vacancies was proposed. According to this model, the pyramidal spike shape growth of NiSi 2 is enhanced by vacancies in silicon substrate generated by H ions projected during reactive ion etching (RIE). To confirm this model, Si ions were implanted prior to nickel deposition instead of RIE process, and the vacancies with the same depth in silicon substrate as those caused by H + ions during RIE were generated. The Rs increase of NiSi was successfully reproduced by this Si ion implantation technique. Then, it is concluded that pyramidal spike growth of MS12 is caused by the vacancies generated by H ion projected during RIE process before nickel silicidation. |
| doi_str_mv | 10.1109/IWJT.2008.4540038 |
| format | Conference Proceeding |
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According to this model, the pyramidal spike shape growth of NiSi 2 is enhanced by vacancies in silicon substrate generated by H ions projected during reactive ion etching (RIE). To confirm this model, Si ions were implanted prior to nickel deposition instead of RIE process, and the vacancies with the same depth in silicon substrate as those caused by H + ions during RIE were generated. The Rs increase of NiSi was successfully reproduced by this Si ion implantation technique. Then, it is concluded that pyramidal spike growth of MS12 is caused by the vacancies generated by H ion projected during RIE process before nickel silicidation.</description><identifier>ISBN: 1424417376</identifier><identifier>ISBN: 9781424417377</identifier><identifier>EISBN: 1424417384</identifier><identifier>EISBN: 9781424417384</identifier><identifier>DOI: 10.1109/IWJT.2008.4540038</identifier><identifier>LCCN: 2007906912</identifier><language>eng</language><publisher>IEEE</publisher><subject>Electrical resistance measurement ; Nickel ; Plasma applications ; Plasma immersion ion implantation ; Plasma measurements ; Raman scattering ; Shape ; Silicon ; Spectroscopy ; Surface resistance</subject><ispartof>Extended Abstracts - 2008 8th International Workshop on Junction Technology (IWJT '08), 2008, p.154-157</ispartof><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://ieeexplore.ieee.org/document/4540038$$EHTML$$P50$$Gieee$$H</linktohtml><link.rule.ids>309,310,776,780,785,786,2052,27902,54895</link.rule.ids><linktorsrc>$$Uhttps://ieeexplore.ieee.org/document/4540038$$EView_record_in_IEEE$$FView_record_in_$$GIEEE</linktorsrc></links><search><creatorcontrib>Kashihara, K.</creatorcontrib><creatorcontrib>Kihara, K.</creatorcontrib><creatorcontrib>Yamaguchi, T.</creatorcontrib><creatorcontrib>Okudaira, T.</creatorcontrib><creatorcontrib>Tsutsumi, T.</creatorcontrib><creatorcontrib>Maekawa, K.</creatorcontrib><creatorcontrib>Sakamori, S.</creatorcontrib><creatorcontrib>Matsumoto, J.</creatorcontrib><creatorcontrib>Yokoi, T.</creatorcontrib><creatorcontrib>Asai, K.</creatorcontrib><creatorcontrib>Kojima, M.</creatorcontrib><title>Mechanism of nickel disilicide growth caused by RIE plasma-induced damage on silicon substrate</title><title>Extended Abstracts - 2008 8th International Workshop on Junction Technology (IWJT '08)</title><addtitle>IWJT</addtitle><description>Effects of dry-etching damage at the surface of p-type silicon on pyramidal spike growth of nickel disilicide (NiSi 2 ) were investigated by using sheet resistance (Rs) measurement, cross sectional SEM7TEM, UV Raman spectroscopy and elastic recoil detection analysis (ERDA), and as a result, a model for nickel diffusion induced by vacancies was proposed. According to this model, the pyramidal spike shape growth of NiSi 2 is enhanced by vacancies in silicon substrate generated by H ions projected during reactive ion etching (RIE). To confirm this model, Si ions were implanted prior to nickel deposition instead of RIE process, and the vacancies with the same depth in silicon substrate as those caused by H + ions during RIE were generated. The Rs increase of NiSi was successfully reproduced by this Si ion implantation technique. Then, it is concluded that pyramidal spike growth of MS12 is caused by the vacancies generated by H ion projected during RIE process before nickel silicidation.</description><subject>Electrical resistance measurement</subject><subject>Nickel</subject><subject>Plasma applications</subject><subject>Plasma immersion ion implantation</subject><subject>Plasma measurements</subject><subject>Raman scattering</subject><subject>Shape</subject><subject>Silicon</subject><subject>Spectroscopy</subject><subject>Surface resistance</subject><isbn>1424417376</isbn><isbn>9781424417377</isbn><isbn>1424417384</isbn><isbn>9781424417384</isbn><fulltext>true</fulltext><rsrctype>conference_proceeding</rsrctype><creationdate>2008</creationdate><recordtype>conference_proceeding</recordtype><sourceid>6IE</sourceid><sourceid>RIE</sourceid><recordid>eNpFUNtKw0AUXJGCtvYDxJf9gcSzl1z2UUrVSEWQgG-Wk720q7mUbIL0741acF7mzDBzHoaQawYxY6Bui7enMuYAeSwTCSDyMzJnkkvJMpHL83-RpTMyn4KZglQxfkGWIXzABJkIwdUleX-2eo-tDw3tHG29_rQ1NT742mtvLN313dewpxrHYA2tjvS1WNNDjaHByLdm1JNrsMGdpV1Lf2s_PFZh6HGwV2TmsA52eeIFKe_X5eox2rw8FKu7TeQVDJEyGjhWwug80dwkPJFOK8sEmOmo0pRjXoFDBgIB0HDhBGrHXVJJ5nIUC3Lz99Zba7eH3jfYH7enbcQ3N7tXYw</recordid><startdate>200805</startdate><enddate>200805</enddate><creator>Kashihara, K.</creator><creator>Kihara, K.</creator><creator>Yamaguchi, T.</creator><creator>Okudaira, T.</creator><creator>Tsutsumi, T.</creator><creator>Maekawa, K.</creator><creator>Sakamori, S.</creator><creator>Matsumoto, J.</creator><creator>Yokoi, T.</creator><creator>Asai, K.</creator><creator>Kojima, M.</creator><general>IEEE</general><scope>6IE</scope><scope>6IL</scope><scope>CBEJK</scope><scope>RIE</scope><scope>RIL</scope></search><sort><creationdate>200805</creationdate><title>Mechanism of nickel disilicide growth caused by RIE plasma-induced damage on silicon substrate</title><author>Kashihara, K. ; Kihara, K. ; Yamaguchi, T. ; Okudaira, T. ; Tsutsumi, T. ; Maekawa, K. ; Sakamori, S. ; Matsumoto, J. ; Yokoi, T. ; Asai, K. ; Kojima, M.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-i90t-9dc02ab3dc85c2d5254fc9e130d4fcb662a8b0fa103a00ad23f3acf2f5b41f8a3</frbrgroupid><rsrctype>conference_proceedings</rsrctype><prefilter>conference_proceedings</prefilter><language>eng</language><creationdate>2008</creationdate><topic>Electrical resistance measurement</topic><topic>Nickel</topic><topic>Plasma applications</topic><topic>Plasma immersion ion implantation</topic><topic>Plasma measurements</topic><topic>Raman scattering</topic><topic>Shape</topic><topic>Silicon</topic><topic>Spectroscopy</topic><topic>Surface resistance</topic><toplevel>online_resources</toplevel><creatorcontrib>Kashihara, K.</creatorcontrib><creatorcontrib>Kihara, K.</creatorcontrib><creatorcontrib>Yamaguchi, T.</creatorcontrib><creatorcontrib>Okudaira, T.</creatorcontrib><creatorcontrib>Tsutsumi, T.</creatorcontrib><creatorcontrib>Maekawa, K.</creatorcontrib><creatorcontrib>Sakamori, S.</creatorcontrib><creatorcontrib>Matsumoto, J.</creatorcontrib><creatorcontrib>Yokoi, T.</creatorcontrib><creatorcontrib>Asai, K.</creatorcontrib><creatorcontrib>Kojima, M.</creatorcontrib><collection>IEEE Electronic Library (IEL) Conference Proceedings</collection><collection>IEEE Proceedings Order Plan All Online (POP All Online) 1998-present by volume</collection><collection>IEEE Xplore All Conference Proceedings</collection><collection>IEEE Xplore</collection><collection>IEEE Proceedings Order Plans (POP All) 1998-Present</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Kashihara, K.</au><au>Kihara, K.</au><au>Yamaguchi, T.</au><au>Okudaira, T.</au><au>Tsutsumi, T.</au><au>Maekawa, K.</au><au>Sakamori, S.</au><au>Matsumoto, J.</au><au>Yokoi, T.</au><au>Asai, K.</au><au>Kojima, M.</au><format>book</format><genre>proceeding</genre><ristype>CONF</ristype><atitle>Mechanism of nickel disilicide growth caused by RIE plasma-induced damage on silicon substrate</atitle><btitle>Extended Abstracts - 2008 8th International Workshop on Junction Technology (IWJT '08)</btitle><stitle>IWJT</stitle><date>2008-05</date><risdate>2008</risdate><spage>154</spage><epage>157</epage><pages>154-157</pages><isbn>1424417376</isbn><isbn>9781424417377</isbn><eisbn>1424417384</eisbn><eisbn>9781424417384</eisbn><abstract>Effects of dry-etching damage at the surface of p-type silicon on pyramidal spike growth of nickel disilicide (NiSi 2 ) were investigated by using sheet resistance (Rs) measurement, cross sectional SEM7TEM, UV Raman spectroscopy and elastic recoil detection analysis (ERDA), and as a result, a model for nickel diffusion induced by vacancies was proposed. According to this model, the pyramidal spike shape growth of NiSi 2 is enhanced by vacancies in silicon substrate generated by H ions projected during reactive ion etching (RIE). To confirm this model, Si ions were implanted prior to nickel deposition instead of RIE process, and the vacancies with the same depth in silicon substrate as those caused by H + ions during RIE were generated. The Rs increase of NiSi was successfully reproduced by this Si ion implantation technique. Then, it is concluded that pyramidal spike growth of MS12 is caused by the vacancies generated by H ion projected during RIE process before nickel silicidation.</abstract><pub>IEEE</pub><doi>10.1109/IWJT.2008.4540038</doi><tpages>4</tpages></addata></record> |
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| language | eng |
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| source | IEEE Electronic Library (IEL) Conference Proceedings |
| subjects | Electrical resistance measurement Nickel Plasma applications Plasma immersion ion implantation Plasma measurements Raman scattering Shape Silicon Spectroscopy Surface resistance |
| title | Mechanism of nickel disilicide growth caused by RIE plasma-induced damage on silicon substrate |
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