High power AlGaN/GaN HFET with a high breakdown voltage of over 1.8 kV on 4 inch Si substrates and the suppression of current collapse
In this paper, we successfully demonstrate an AlGaN HFET with a high breakdown voltage of over 1.8 kV on 4 inch Si substrates. In order to obtain the high breakdown voltage and to improve the crystalline quality of GaN layers, a thick GaN epitaxial layer including a buffer layer with a total thickne...
Gespeichert in:
| Hauptverfasser: | , , , , , |
|---|---|
| Format: | Tagungsbericht |
| Sprache: | eng |
| Schlagworte: | |
| Online-Zugang: | Volltext bestellen |
| Tags: |
Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
|
| container_end_page | 290 |
|---|---|
| container_issue | |
| container_start_page | 287 |
| container_title | |
| container_volume | |
| creator | Ikeda, N. Kaya, S. Jiang Li Sato, Y. Kato, S. Yoshida, S. |
| description | In this paper, we successfully demonstrate an AlGaN HFET with a high breakdown voltage of over 1.8 kV on 4 inch Si substrates. In order to obtain the high breakdown voltage and to improve the crystalline quality of GaN layers, a thick GaN epitaxial layer including a buffer layer with a total thickness of over 6 mum was grown. The breakdown voltage and the maximum drain current were achieved to be over 1.8 kV and 120 A, respectively. Furthermore, the suppression of the current collapse phenomenon is examined. The on-resistance is not so significantly increased up to the high drain off-bias-stress of 1.0 kV. |
| doi_str_mv | 10.1109/ISPSD.2008.4538955 |
| format | Conference Proceeding |
| fullrecord | <record><control><sourceid>ieee_6IE</sourceid><recordid>TN_cdi_ieee_primary_4538955</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><ieee_id>4538955</ieee_id><sourcerecordid>4538955</sourcerecordid><originalsourceid>FETCH-LOGICAL-i175t-949b436e7cca9ea366b3a362c47fd6ec7b7f5494d549c2d7bb5dc490b77a52b83</originalsourceid><addsrcrecordid>eNpVUEtOwzAQNZ9KlNILwGYukNSO7TheVgXaShUgFdhWtuM0piGJ4rQVF-DcGNENI80bad5Ho0HoluCYECwny_XL-j5OMM5ixmkmOT9DYykywhLGCKeUn6MhkSyNcILJxT8uyS4Dh1MapRlnA3QdYoTEnODsCo29_8ChQipleIi-F25bQtscbQfTaq6eJqFh8fjwCkfXl6Cg_BXozqpd3hxrODRVr7YWmgKaQzCROIPdOzQ1MHC1KWHtwO-17zvVWw-qzqEvbVi1bWe9d0EYrGbfdbbuwTRVpVpvb9CgUJW349McobdwwmwRrZ7ny9l0FTkieB9JJjWjqRXGKGkVTVNNAyaGiSJPrRFaFJxJlgcwSS605rlhEmshFE90Rkfo7i_XWWs3bec-Vfe1Ob2Y_gCabmi_</addsrcrecordid><sourcetype>Publisher</sourcetype><iscdi>true</iscdi><recordtype>conference_proceeding</recordtype></control><display><type>conference_proceeding</type><title>High power AlGaN/GaN HFET with a high breakdown voltage of over 1.8 kV on 4 inch Si substrates and the suppression of current collapse</title><source>IEEE Electronic Library (IEL) Conference Proceedings</source><creator>Ikeda, N. ; Kaya, S. ; Jiang Li ; Sato, Y. ; Kato, S. ; Yoshida, S.</creator><creatorcontrib>Ikeda, N. ; Kaya, S. ; Jiang Li ; Sato, Y. ; Kato, S. ; Yoshida, S.</creatorcontrib><description>In this paper, we successfully demonstrate an AlGaN HFET with a high breakdown voltage of over 1.8 kV on 4 inch Si substrates. In order to obtain the high breakdown voltage and to improve the crystalline quality of GaN layers, a thick GaN epitaxial layer including a buffer layer with a total thickness of over 6 mum was grown. The breakdown voltage and the maximum drain current were achieved to be over 1.8 kV and 120 A, respectively. Furthermore, the suppression of the current collapse phenomenon is examined. The on-resistance is not so significantly increased up to the high drain off-bias-stress of 1.0 kV.</description><identifier>ISSN: 1063-6854</identifier><identifier>ISBN: 9781424415328</identifier><identifier>ISBN: 1424415322</identifier><identifier>EISSN: 1946-0201</identifier><identifier>EISBN: 9781424415335</identifier><identifier>EISBN: 1424415330</identifier><identifier>DOI: 10.1109/ISPSD.2008.4538955</identifier><identifier>LCCN: 2007905108</identifier><language>eng</language><publisher>IEEE</publisher><subject>Aluminum gallium nitride ; Buffer layers ; Epitaxial layers ; FETs ; Gallium nitride ; Gold ; HEMTs ; Leakage current ; MODFETs ; Substrates</subject><ispartof>2008 20th International Symposium on Power Semiconductor Devices and IC's, 2008, p.287-290</ispartof><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://ieeexplore.ieee.org/document/4538955$$EHTML$$P50$$Gieee$$H</linktohtml><link.rule.ids>309,310,776,780,785,786,2052,27902,54895</link.rule.ids><linktorsrc>$$Uhttps://ieeexplore.ieee.org/document/4538955$$EView_record_in_IEEE$$FView_record_in_$$GIEEE</linktorsrc></links><search><creatorcontrib>Ikeda, N.</creatorcontrib><creatorcontrib>Kaya, S.</creatorcontrib><creatorcontrib>Jiang Li</creatorcontrib><creatorcontrib>Sato, Y.</creatorcontrib><creatorcontrib>Kato, S.</creatorcontrib><creatorcontrib>Yoshida, S.</creatorcontrib><title>High power AlGaN/GaN HFET with a high breakdown voltage of over 1.8 kV on 4 inch Si substrates and the suppression of current collapse</title><title>2008 20th International Symposium on Power Semiconductor Devices and IC's</title><addtitle>ISPSD</addtitle><description>In this paper, we successfully demonstrate an AlGaN HFET with a high breakdown voltage of over 1.8 kV on 4 inch Si substrates. In order to obtain the high breakdown voltage and to improve the crystalline quality of GaN layers, a thick GaN epitaxial layer including a buffer layer with a total thickness of over 6 mum was grown. The breakdown voltage and the maximum drain current were achieved to be over 1.8 kV and 120 A, respectively. Furthermore, the suppression of the current collapse phenomenon is examined. The on-resistance is not so significantly increased up to the high drain off-bias-stress of 1.0 kV.</description><subject>Aluminum gallium nitride</subject><subject>Buffer layers</subject><subject>Epitaxial layers</subject><subject>FETs</subject><subject>Gallium nitride</subject><subject>Gold</subject><subject>HEMTs</subject><subject>Leakage current</subject><subject>MODFETs</subject><subject>Substrates</subject><issn>1063-6854</issn><issn>1946-0201</issn><isbn>9781424415328</isbn><isbn>1424415322</isbn><isbn>9781424415335</isbn><isbn>1424415330</isbn><fulltext>true</fulltext><rsrctype>conference_proceeding</rsrctype><creationdate>2008</creationdate><recordtype>conference_proceeding</recordtype><sourceid>6IE</sourceid><sourceid>RIE</sourceid><recordid>eNpVUEtOwzAQNZ9KlNILwGYukNSO7TheVgXaShUgFdhWtuM0piGJ4rQVF-DcGNENI80bad5Ho0HoluCYECwny_XL-j5OMM5ixmkmOT9DYykywhLGCKeUn6MhkSyNcILJxT8uyS4Dh1MapRlnA3QdYoTEnODsCo29_8ChQipleIi-F25bQtscbQfTaq6eJqFh8fjwCkfXl6Cg_BXozqpd3hxrODRVr7YWmgKaQzCROIPdOzQ1MHC1KWHtwO-17zvVWw-qzqEvbVi1bWe9d0EYrGbfdbbuwTRVpVpvb9CgUJW349McobdwwmwRrZ7ny9l0FTkieB9JJjWjqRXGKGkVTVNNAyaGiSJPrRFaFJxJlgcwSS605rlhEmshFE90Rkfo7i_XWWs3bec-Vfe1Ob2Y_gCabmi_</recordid><startdate>200805</startdate><enddate>200805</enddate><creator>Ikeda, N.</creator><creator>Kaya, S.</creator><creator>Jiang Li</creator><creator>Sato, Y.</creator><creator>Kato, S.</creator><creator>Yoshida, S.</creator><general>IEEE</general><scope>6IE</scope><scope>6IH</scope><scope>CBEJK</scope><scope>RIE</scope><scope>RIO</scope></search><sort><creationdate>200805</creationdate><title>High power AlGaN/GaN HFET with a high breakdown voltage of over 1.8 kV on 4 inch Si substrates and the suppression of current collapse</title><author>Ikeda, N. ; Kaya, S. ; Jiang Li ; Sato, Y. ; Kato, S. ; Yoshida, S.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-i175t-949b436e7cca9ea366b3a362c47fd6ec7b7f5494d549c2d7bb5dc490b77a52b83</frbrgroupid><rsrctype>conference_proceedings</rsrctype><prefilter>conference_proceedings</prefilter><language>eng</language><creationdate>2008</creationdate><topic>Aluminum gallium nitride</topic><topic>Buffer layers</topic><topic>Epitaxial layers</topic><topic>FETs</topic><topic>Gallium nitride</topic><topic>Gold</topic><topic>HEMTs</topic><topic>Leakage current</topic><topic>MODFETs</topic><topic>Substrates</topic><toplevel>online_resources</toplevel><creatorcontrib>Ikeda, N.</creatorcontrib><creatorcontrib>Kaya, S.</creatorcontrib><creatorcontrib>Jiang Li</creatorcontrib><creatorcontrib>Sato, Y.</creatorcontrib><creatorcontrib>Kato, S.</creatorcontrib><creatorcontrib>Yoshida, S.</creatorcontrib><collection>IEEE Electronic Library (IEL) Conference Proceedings</collection><collection>IEEE Proceedings Order Plan (POP) 1998-present by volume</collection><collection>IEEE Xplore All Conference Proceedings</collection><collection>IEEE Electronic Library (IEL)</collection><collection>IEEE Proceedings Order Plans (POP) 1998-present</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Ikeda, N.</au><au>Kaya, S.</au><au>Jiang Li</au><au>Sato, Y.</au><au>Kato, S.</au><au>Yoshida, S.</au><format>book</format><genre>proceeding</genre><ristype>CONF</ristype><atitle>High power AlGaN/GaN HFET with a high breakdown voltage of over 1.8 kV on 4 inch Si substrates and the suppression of current collapse</atitle><btitle>2008 20th International Symposium on Power Semiconductor Devices and IC's</btitle><stitle>ISPSD</stitle><date>2008-05</date><risdate>2008</risdate><spage>287</spage><epage>290</epage><pages>287-290</pages><issn>1063-6854</issn><eissn>1946-0201</eissn><isbn>9781424415328</isbn><isbn>1424415322</isbn><eisbn>9781424415335</eisbn><eisbn>1424415330</eisbn><abstract>In this paper, we successfully demonstrate an AlGaN HFET with a high breakdown voltage of over 1.8 kV on 4 inch Si substrates. In order to obtain the high breakdown voltage and to improve the crystalline quality of GaN layers, a thick GaN epitaxial layer including a buffer layer with a total thickness of over 6 mum was grown. The breakdown voltage and the maximum drain current were achieved to be over 1.8 kV and 120 A, respectively. Furthermore, the suppression of the current collapse phenomenon is examined. The on-resistance is not so significantly increased up to the high drain off-bias-stress of 1.0 kV.</abstract><pub>IEEE</pub><doi>10.1109/ISPSD.2008.4538955</doi><tpages>4</tpages></addata></record> |
| fulltext | fulltext_linktorsrc |
| identifier | ISSN: 1063-6854 |
| ispartof | 2008 20th International Symposium on Power Semiconductor Devices and IC's, 2008, p.287-290 |
| issn | 1063-6854 1946-0201 |
| language | eng |
| recordid | cdi_ieee_primary_4538955 |
| source | IEEE Electronic Library (IEL) Conference Proceedings |
| subjects | Aluminum gallium nitride Buffer layers Epitaxial layers FETs Gallium nitride Gold HEMTs Leakage current MODFETs Substrates |
| title | High power AlGaN/GaN HFET with a high breakdown voltage of over 1.8 kV on 4 inch Si substrates and the suppression of current collapse |
| url | https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-02-07T22%3A48%3A14IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-ieee_6IE&rft_val_fmt=info:ofi/fmt:kev:mtx:book&rft.genre=proceeding&rft.atitle=High%20power%20AlGaN/GaN%20HFET%20with%20a%20high%20breakdown%20voltage%20of%20over%201.8%20kV%20on%204%20inch%20Si%20substrates%20and%20the%20suppression%20of%20current%20collapse&rft.btitle=2008%2020th%20International%20Symposium%20on%20Power%20Semiconductor%20Devices%20and%20IC's&rft.au=Ikeda,%20N.&rft.date=2008-05&rft.spage=287&rft.epage=290&rft.pages=287-290&rft.issn=1063-6854&rft.eissn=1946-0201&rft.isbn=9781424415328&rft.isbn_list=1424415322&rft_id=info:doi/10.1109/ISPSD.2008.4538955&rft_dat=%3Cieee_6IE%3E4538955%3C/ieee_6IE%3E%3Curl%3E%3C/url%3E&rft.eisbn=9781424415335&rft.eisbn_list=1424415330&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_id=info:pmid/&rft_ieee_id=4538955&rfr_iscdi=true |