The effect of the temperature on the Bipolar Degradation of 3.3 kV 4H-SiC PiN diodes

Abstract- 4H-SiC PiN diodes have been manufactured on a Norstel epitaxied P+ZN/N* substrate with a combination of Mesa and JTE as edge termination. A breakdown voltage of 3.3 kV has been measured at lmuA regardless the active area (0.16 and 2.56 mm 2 ). A differential on-resistance of 1.7 mOmega.cm...

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Hauptverfasser: Brosselard, P., Tomas, A.P., Camara, N., Hassan, J., Jorda, X., Vellvehi, M., Godignon, P., Millan, J., Bergman, J.P.
Format: Tagungsbericht
Sprache:eng
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Zusammenfassung:Abstract- 4H-SiC PiN diodes have been manufactured on a Norstel epitaxied P+ZN/N* substrate with a combination of Mesa and JTE as edge termination. A breakdown voltage of 3.3 kV has been measured at lmuA regardless the active area (0.16 and 2.56 mm 2 ). A differential on-resistance of 1.7 mOmega.cm 2 was extracted at 15A-25degC. The recovery charge was only of 300 nC for a switched current of 15A at 300degC at a blocking voltage of 500V. 50% of the diodes exhibit a voltage shift of about IV, after a 60 hours DC- stress (25degC-225degC). The leakage current level remains unaffected after the DC stress.
ISSN:1063-6854
1946-0201
DOI:10.1109/ISPSD.2008.4538942