Retrograded Channel SOI LIGBTs with Enhanced Safe Operating Area
A retrograded doping profile(RDP) is directly introduced into the lateral diffused channel region for an insulated gate bipolar transistor (RDP-LIGBT) on silicon-on-insulator (SOI) substrate to improve its current capability and robustness. The profile is implemented by ion-implantation with energy...
Gespeichert in:
| Hauptverfasser: | , , , , |
|---|---|
| Format: | Tagungsbericht |
| Sprache: | eng |
| Schlagworte: | |
| Online-Zugang: | Volltext bestellen |
| Tags: |
Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
|
| container_end_page | 35 |
|---|---|
| container_issue | |
| container_start_page | 32 |
| container_title | |
| container_volume | |
| creator | Lu, D.H. Mizushima, T. Kitamura, A. Iwamuro, N. Fujishima, N. |
| description | A retrograded doping profile(RDP) is directly introduced into the lateral diffused channel region for an insulated gate bipolar transistor (RDP-LIGBT) on silicon-on-insulator (SOI) substrate to improve its current capability and robustness. The profile is implemented by ion-implantation with energy less than 180 KeV before gate oxidation. The threshold voltage is well controlled by considering the mask proximity effect (MPE). The new LIGBT has a current capability of 1.2-1.6 times larger than that of its conventional counterpart. Its short-circuit capability is 1.2 J/cm 2 , while its conventional counterpart's is 0.192 J/cm 2 , at a voltage of 180-210 V and a current density of 1.4 KA/cm 2 . |
| doi_str_mv | 10.1109/ISPSD.2008.4538890 |
| format | Conference Proceeding |
| fullrecord | <record><control><sourceid>ieee_6IE</sourceid><recordid>TN_cdi_ieee_primary_4538890</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><ieee_id>4538890</ieee_id><sourcerecordid>4538890</sourcerecordid><originalsourceid>FETCH-LOGICAL-i175t-45883abcf9ae7f7af140646e88a6dba023452cf2da674965dd9d45824b40c6e63</originalsourceid><addsrcrecordid>eNpVkMtOwzAQRc2jEqX0B2DjH0gZ22PH3lFCKZEqBZGyrtx40gaVUCWREH-PJbphNndx7j2LYexWwEwIcPd5-Vo-zSSAnaFW1jo4Y1OXWoESUWil9DkbC4cmAQni4h-T9jIyMCoxVuOIXUdN6kALsFds2vcfEC9aFcKYPbzR0H3tOh8o8Gzv25YOvCxyvsqXj-uefzfDni_aCKpYKH1NvDhS54em3fF5R_6GjWp_6Gl6ygl7f16ss5dkVSzzbL5KGpHqIUFtrfLbqnae0jr1tUAwaMhab8LWg1SoZVXL4E2KzugQXIgbiVuEypBRE3b3522IaHPsmk_f_WxOz1G_pMNPgQ</addsrcrecordid><sourcetype>Publisher</sourcetype><iscdi>true</iscdi><recordtype>conference_proceeding</recordtype></control><display><type>conference_proceeding</type><title>Retrograded Channel SOI LIGBTs with Enhanced Safe Operating Area</title><source>IEEE Electronic Library (IEL) Conference Proceedings</source><creator>Lu, D.H. ; Mizushima, T. ; Kitamura, A. ; Iwamuro, N. ; Fujishima, N.</creator><creatorcontrib>Lu, D.H. ; Mizushima, T. ; Kitamura, A. ; Iwamuro, N. ; Fujishima, N.</creatorcontrib><description>A retrograded doping profile(RDP) is directly introduced into the lateral diffused channel region for an insulated gate bipolar transistor (RDP-LIGBT) on silicon-on-insulator (SOI) substrate to improve its current capability and robustness. The profile is implemented by ion-implantation with energy less than 180 KeV before gate oxidation. The threshold voltage is well controlled by considering the mask proximity effect (MPE). The new LIGBT has a current capability of 1.2-1.6 times larger than that of its conventional counterpart. Its short-circuit capability is 1.2 J/cm 2 , while its conventional counterpart's is 0.192 J/cm 2 , at a voltage of 180-210 V and a current density of 1.4 KA/cm 2 .</description><identifier>ISSN: 1063-6854</identifier><identifier>ISBN: 9781424415328</identifier><identifier>ISBN: 1424415322</identifier><identifier>EISSN: 1946-0201</identifier><identifier>EISBN: 9781424415335</identifier><identifier>EISBN: 1424415330</identifier><identifier>DOI: 10.1109/ISPSD.2008.4538890</identifier><identifier>LCCN: 2007905108</identifier><language>eng</language><publisher>IEEE</publisher><subject>Application specific integrated circuits ; Dielectric substrates ; Doping profiles ; Insulated gate bipolar transistors ; Logic devices ; Power semiconductor devices ; Robustness ; Silicon on insulator technology ; Surface resistance ; Voltage</subject><ispartof>2008 20th International Symposium on Power Semiconductor Devices and IC's, 2008, p.32-35</ispartof><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://ieeexplore.ieee.org/document/4538890$$EHTML$$P50$$Gieee$$H</linktohtml><link.rule.ids>309,310,776,780,785,786,2052,27902,54895</link.rule.ids><linktorsrc>$$Uhttps://ieeexplore.ieee.org/document/4538890$$EView_record_in_IEEE$$FView_record_in_$$GIEEE</linktorsrc></links><search><creatorcontrib>Lu, D.H.</creatorcontrib><creatorcontrib>Mizushima, T.</creatorcontrib><creatorcontrib>Kitamura, A.</creatorcontrib><creatorcontrib>Iwamuro, N.</creatorcontrib><creatorcontrib>Fujishima, N.</creatorcontrib><title>Retrograded Channel SOI LIGBTs with Enhanced Safe Operating Area</title><title>2008 20th International Symposium on Power Semiconductor Devices and IC's</title><addtitle>ISPSD</addtitle><description>A retrograded doping profile(RDP) is directly introduced into the lateral diffused channel region for an insulated gate bipolar transistor (RDP-LIGBT) on silicon-on-insulator (SOI) substrate to improve its current capability and robustness. The profile is implemented by ion-implantation with energy less than 180 KeV before gate oxidation. The threshold voltage is well controlled by considering the mask proximity effect (MPE). The new LIGBT has a current capability of 1.2-1.6 times larger than that of its conventional counterpart. Its short-circuit capability is 1.2 J/cm 2 , while its conventional counterpart's is 0.192 J/cm 2 , at a voltage of 180-210 V and a current density of 1.4 KA/cm 2 .</description><subject>Application specific integrated circuits</subject><subject>Dielectric substrates</subject><subject>Doping profiles</subject><subject>Insulated gate bipolar transistors</subject><subject>Logic devices</subject><subject>Power semiconductor devices</subject><subject>Robustness</subject><subject>Silicon on insulator technology</subject><subject>Surface resistance</subject><subject>Voltage</subject><issn>1063-6854</issn><issn>1946-0201</issn><isbn>9781424415328</isbn><isbn>1424415322</isbn><isbn>9781424415335</isbn><isbn>1424415330</isbn><fulltext>true</fulltext><rsrctype>conference_proceeding</rsrctype><creationdate>2008</creationdate><recordtype>conference_proceeding</recordtype><sourceid>6IE</sourceid><sourceid>RIE</sourceid><recordid>eNpVkMtOwzAQRc2jEqX0B2DjH0gZ22PH3lFCKZEqBZGyrtx40gaVUCWREH-PJbphNndx7j2LYexWwEwIcPd5-Vo-zSSAnaFW1jo4Y1OXWoESUWil9DkbC4cmAQni4h-T9jIyMCoxVuOIXUdN6kALsFds2vcfEC9aFcKYPbzR0H3tOh8o8Gzv25YOvCxyvsqXj-uefzfDni_aCKpYKH1NvDhS54em3fF5R_6GjWp_6Gl6ygl7f16ss5dkVSzzbL5KGpHqIUFtrfLbqnae0jr1tUAwaMhab8LWg1SoZVXL4E2KzugQXIgbiVuEypBRE3b3522IaHPsmk_f_WxOz1G_pMNPgQ</recordid><startdate>200805</startdate><enddate>200805</enddate><creator>Lu, D.H.</creator><creator>Mizushima, T.</creator><creator>Kitamura, A.</creator><creator>Iwamuro, N.</creator><creator>Fujishima, N.</creator><general>IEEE</general><scope>6IE</scope><scope>6IH</scope><scope>CBEJK</scope><scope>RIE</scope><scope>RIO</scope></search><sort><creationdate>200805</creationdate><title>Retrograded Channel SOI LIGBTs with Enhanced Safe Operating Area</title><author>Lu, D.H. ; Mizushima, T. ; Kitamura, A. ; Iwamuro, N. ; Fujishima, N.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-i175t-45883abcf9ae7f7af140646e88a6dba023452cf2da674965dd9d45824b40c6e63</frbrgroupid><rsrctype>conference_proceedings</rsrctype><prefilter>conference_proceedings</prefilter><language>eng</language><creationdate>2008</creationdate><topic>Application specific integrated circuits</topic><topic>Dielectric substrates</topic><topic>Doping profiles</topic><topic>Insulated gate bipolar transistors</topic><topic>Logic devices</topic><topic>Power semiconductor devices</topic><topic>Robustness</topic><topic>Silicon on insulator technology</topic><topic>Surface resistance</topic><topic>Voltage</topic><toplevel>online_resources</toplevel><creatorcontrib>Lu, D.H.</creatorcontrib><creatorcontrib>Mizushima, T.</creatorcontrib><creatorcontrib>Kitamura, A.</creatorcontrib><creatorcontrib>Iwamuro, N.</creatorcontrib><creatorcontrib>Fujishima, N.</creatorcontrib><collection>IEEE Electronic Library (IEL) Conference Proceedings</collection><collection>IEEE Proceedings Order Plan (POP) 1998-present by volume</collection><collection>IEEE Xplore All Conference Proceedings</collection><collection>IEEE Electronic Library (IEL)</collection><collection>IEEE Proceedings Order Plans (POP) 1998-present</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Lu, D.H.</au><au>Mizushima, T.</au><au>Kitamura, A.</au><au>Iwamuro, N.</au><au>Fujishima, N.</au><format>book</format><genre>proceeding</genre><ristype>CONF</ristype><atitle>Retrograded Channel SOI LIGBTs with Enhanced Safe Operating Area</atitle><btitle>2008 20th International Symposium on Power Semiconductor Devices and IC's</btitle><stitle>ISPSD</stitle><date>2008-05</date><risdate>2008</risdate><spage>32</spage><epage>35</epage><pages>32-35</pages><issn>1063-6854</issn><eissn>1946-0201</eissn><isbn>9781424415328</isbn><isbn>1424415322</isbn><eisbn>9781424415335</eisbn><eisbn>1424415330</eisbn><abstract>A retrograded doping profile(RDP) is directly introduced into the lateral diffused channel region for an insulated gate bipolar transistor (RDP-LIGBT) on silicon-on-insulator (SOI) substrate to improve its current capability and robustness. The profile is implemented by ion-implantation with energy less than 180 KeV before gate oxidation. The threshold voltage is well controlled by considering the mask proximity effect (MPE). The new LIGBT has a current capability of 1.2-1.6 times larger than that of its conventional counterpart. Its short-circuit capability is 1.2 J/cm 2 , while its conventional counterpart's is 0.192 J/cm 2 , at a voltage of 180-210 V and a current density of 1.4 KA/cm 2 .</abstract><pub>IEEE</pub><doi>10.1109/ISPSD.2008.4538890</doi><tpages>4</tpages></addata></record> |
| fulltext | fulltext_linktorsrc |
| identifier | ISSN: 1063-6854 |
| ispartof | 2008 20th International Symposium on Power Semiconductor Devices and IC's, 2008, p.32-35 |
| issn | 1063-6854 1946-0201 |
| language | eng |
| recordid | cdi_ieee_primary_4538890 |
| source | IEEE Electronic Library (IEL) Conference Proceedings |
| subjects | Application specific integrated circuits Dielectric substrates Doping profiles Insulated gate bipolar transistors Logic devices Power semiconductor devices Robustness Silicon on insulator technology Surface resistance Voltage |
| title | Retrograded Channel SOI LIGBTs with Enhanced Safe Operating Area |
| url | https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-02-02T00%3A22%3A58IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-ieee_6IE&rft_val_fmt=info:ofi/fmt:kev:mtx:book&rft.genre=proceeding&rft.atitle=Retrograded%20Channel%20SOI%20LIGBTs%20with%20Enhanced%20Safe%20Operating%20Area&rft.btitle=2008%2020th%20International%20Symposium%20on%20Power%20Semiconductor%20Devices%20and%20IC's&rft.au=Lu,%20D.H.&rft.date=2008-05&rft.spage=32&rft.epage=35&rft.pages=32-35&rft.issn=1063-6854&rft.eissn=1946-0201&rft.isbn=9781424415328&rft.isbn_list=1424415322&rft_id=info:doi/10.1109/ISPSD.2008.4538890&rft_dat=%3Cieee_6IE%3E4538890%3C/ieee_6IE%3E%3Curl%3E%3C/url%3E&rft.eisbn=9781424415335&rft.eisbn_list=1424415330&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_id=info:pmid/&rft_ieee_id=4538890&rfr_iscdi=true |