Effect of Thickness of the p-AlGaN Electron Blocking Layer on the Improvement of ESD Characteristics in GaN-Based LEDs

The following letter presents a study regarding GaN-based light-emitting diodes (LEDs) with p-type AlGaN electron blocking layers (EBLs) of different thicknesses. The study revealed that the LEDs could endure higher electrostatic discharge (ESD) levels as the thickness of the AlGaN EBL increased. Th...

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Veröffentlicht in:	IEEE photonics technology letters 2008-07, Vol.20 (13), p.1142-1144
Hauptverfasser:	Chung-Hsun Jang, Sheu, J.K., Tsai, C.M., Shei, S.C., Lai, W.C., Chang, S.J.
Format:	Artikel
Sprache:	eng
Schlagworte:	AlGaN Aluminum gallium nitride Aluminum gallium nitrides Capacitive sensors Dislocations Durability Electric potential electron blocking layer (EBL) Electrons Electrostatic discharge electrostatic discharge (ESD) Endurance Gallium nitride Gallium nitrides GaN light-emitting diode (LED) Light emitting diodes Pits Power generation Quantum well devices Static electricity Surface discharges Voltage
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