Novel One-Dimensional Scattering Bar Rule via Computer Aided Design
Although one-dimensional scattering bars (SB) are designed to consolidate photolithography patterns to extend process tolerance, but the inability of covering diverse layout environments by employing simple SB rules collected from empirical measurements makes it impossible to utilize SB as a reliabl...
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creator | Chun Yu Lin Liou, B. Feng Yuan Chiou Chen Hung Ku |
description | Although one-dimensional scattering bars (SB) are designed to consolidate photolithography patterns to extend process tolerance, but the inability of covering diverse layout environments by employing simple SB rules collected from empirical measurements makes it impossible to utilize SB as a reliable resolution enhancement technology (RET). Therefore, this study presents a novel one-dimensional SB scheme called computational scattering bar rule (CSBR) that assures line-space layouts get suitable SB. An empirical data can be measured and a physical model can then be built to fit the data. Next, basing on such model, wafer images are simulated over numerous critical dimensions (CD) of main feature (MF) with different SB widths and SB spaces to locate optimized SB rules. Two approaches of optimization strategies are proposed to meet different requirements, and are verified by commercial software. This novel scheme significantly contributes to utility of SB. |
doi_str_mv | 10.1109/ASMC.2008.4529024 |
format | Conference Proceeding |
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Therefore, this study presents a novel one-dimensional SB scheme called computational scattering bar rule (CSBR) that assures line-space layouts get suitable SB. An empirical data can be measured and a physical model can then be built to fit the data. Next, basing on such model, wafer images are simulated over numerous critical dimensions (CD) of main feature (MF) with different SB widths and SB spaces to locate optimized SB rules. Two approaches of optimization strategies are proposed to meet different requirements, and are verified by commercial software. This novel scheme significantly contributes to utility of SB.</description><identifier>ISSN: 1078-8743</identifier><identifier>ISBN: 1424419646</identifier><identifier>ISBN: 9781424419647</identifier><identifier>EISSN: 2376-6697</identifier><identifier>EISBN: 9781424419654</identifier><identifier>EISBN: 1424419654</identifier><identifier>DOI: 10.1109/ASMC.2008.4529024</identifier><language>eng</language><publisher>IEEE</publisher><subject>Bars ; computer aided design ; Focusing ; Lighting ; Lithography ; Optical computing ; optical proximity correction ; Optical scattering ; Optical sensors ; resolution enhancement technology ; Scattering Bar ; Semiconductor device modeling ; Space technology ; sub-resolution assist feature ; Testing</subject><ispartof>2008 IEEE/SEMI Advanced Semiconductor Manufacturing Conference, 2008, p.173-178</ispartof><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://ieeexplore.ieee.org/document/4529024$$EHTML$$P50$$Gieee$$H</linktohtml><link.rule.ids>309,310,778,782,787,788,2054,27908,54903</link.rule.ids><linktorsrc>$$Uhttps://ieeexplore.ieee.org/document/4529024$$EView_record_in_IEEE$$FView_record_in_$$GIEEE</linktorsrc></links><search><creatorcontrib>Chun Yu Lin</creatorcontrib><creatorcontrib>Liou, B.</creatorcontrib><creatorcontrib>Feng Yuan Chiou</creatorcontrib><creatorcontrib>Chen Hung Ku</creatorcontrib><title>Novel One-Dimensional Scattering Bar Rule via Computer Aided Design</title><title>2008 IEEE/SEMI Advanced Semiconductor Manufacturing Conference</title><addtitle>ASMC</addtitle><description>Although one-dimensional scattering bars (SB) are designed to consolidate photolithography patterns to extend process tolerance, but the inability of covering diverse layout environments by employing simple SB rules collected from empirical measurements makes it impossible to utilize SB as a reliable resolution enhancement technology (RET). Therefore, this study presents a novel one-dimensional SB scheme called computational scattering bar rule (CSBR) that assures line-space layouts get suitable SB. An empirical data can be measured and a physical model can then be built to fit the data. Next, basing on such model, wafer images are simulated over numerous critical dimensions (CD) of main feature (MF) with different SB widths and SB spaces to locate optimized SB rules. Two approaches of optimization strategies are proposed to meet different requirements, and are verified by commercial software. This novel scheme significantly contributes to utility of SB.</description><subject>Bars</subject><subject>computer aided design</subject><subject>Focusing</subject><subject>Lighting</subject><subject>Lithography</subject><subject>Optical computing</subject><subject>optical proximity correction</subject><subject>Optical scattering</subject><subject>Optical sensors</subject><subject>resolution enhancement technology</subject><subject>Scattering Bar</subject><subject>Semiconductor device modeling</subject><subject>Space technology</subject><subject>sub-resolution assist feature</subject><subject>Testing</subject><issn>1078-8743</issn><issn>2376-6697</issn><isbn>1424419646</isbn><isbn>9781424419647</isbn><isbn>9781424419654</isbn><isbn>1424419654</isbn><fulltext>true</fulltext><rsrctype>conference_proceeding</rsrctype><creationdate>2008</creationdate><recordtype>conference_proceeding</recordtype><sourceid>6IE</sourceid><sourceid>RIE</sourceid><recordid>eNo1kMlOwzAURc0kUUo-ALHxD7h4ePGwLCmTVKhEYV259ktllCZVklbi7xuJcjd3cY7u4hJyJ_hECO4epsv3YiI5txPIpeMSzkjmjBUgAYTTOZyTkVRGM62duSA3_wD0JRkJbiyzBtQ1ybruhw-BXA3GiBQfzQEruqiRzdIW6y41ta_oMvi-xzbVG_roW_q5r5AekqdFs93tB0CnKWKkM-zSpr4lV6WvOsxOPSbfz09fxSubL17eiumcJWHynqFXEgNYE6NbB8Bggsgd9x5D1AqCcK5UnEs0JnKNca0QlOYByyCs0FaNyf3fbkLE1a5NW9_-rk5_qCPMsk8I</recordid><startdate>200805</startdate><enddate>200805</enddate><creator>Chun Yu Lin</creator><creator>Liou, B.</creator><creator>Feng Yuan Chiou</creator><creator>Chen Hung Ku</creator><general>IEEE</general><scope>6IE</scope><scope>6IH</scope><scope>CBEJK</scope><scope>RIE</scope><scope>RIO</scope></search><sort><creationdate>200805</creationdate><title>Novel One-Dimensional Scattering Bar Rule via Computer Aided Design</title><author>Chun Yu Lin ; Liou, B. ; Feng Yuan Chiou ; Chen Hung Ku</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-i175t-ea32ec487dd9bc4ec7c1590aaecd634c199f3002e77d06edb3e4360cefc181683</frbrgroupid><rsrctype>conference_proceedings</rsrctype><prefilter>conference_proceedings</prefilter><language>eng</language><creationdate>2008</creationdate><topic>Bars</topic><topic>computer aided design</topic><topic>Focusing</topic><topic>Lighting</topic><topic>Lithography</topic><topic>Optical computing</topic><topic>optical proximity correction</topic><topic>Optical scattering</topic><topic>Optical sensors</topic><topic>resolution enhancement technology</topic><topic>Scattering Bar</topic><topic>Semiconductor device modeling</topic><topic>Space technology</topic><topic>sub-resolution assist feature</topic><topic>Testing</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Chun Yu Lin</creatorcontrib><creatorcontrib>Liou, B.</creatorcontrib><creatorcontrib>Feng Yuan Chiou</creatorcontrib><creatorcontrib>Chen Hung Ku</creatorcontrib><collection>IEEE Electronic Library (IEL) Conference Proceedings</collection><collection>IEEE Proceedings Order Plan (POP) 1998-present by volume</collection><collection>IEEE Xplore All Conference Proceedings</collection><collection>IEEE Electronic Library (IEL)</collection><collection>IEEE Proceedings Order Plans (POP) 1998-present</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Chun Yu Lin</au><au>Liou, B.</au><au>Feng Yuan Chiou</au><au>Chen Hung Ku</au><format>book</format><genre>proceeding</genre><ristype>CONF</ristype><atitle>Novel One-Dimensional Scattering Bar Rule via Computer Aided Design</atitle><btitle>2008 IEEE/SEMI Advanced Semiconductor Manufacturing Conference</btitle><stitle>ASMC</stitle><date>2008-05</date><risdate>2008</risdate><spage>173</spage><epage>178</epage><pages>173-178</pages><issn>1078-8743</issn><eissn>2376-6697</eissn><isbn>1424419646</isbn><isbn>9781424419647</isbn><eisbn>9781424419654</eisbn><eisbn>1424419654</eisbn><abstract>Although one-dimensional scattering bars (SB) are designed to consolidate photolithography patterns to extend process tolerance, but the inability of covering diverse layout environments by employing simple SB rules collected from empirical measurements makes it impossible to utilize SB as a reliable resolution enhancement technology (RET). Therefore, this study presents a novel one-dimensional SB scheme called computational scattering bar rule (CSBR) that assures line-space layouts get suitable SB. An empirical data can be measured and a physical model can then be built to fit the data. Next, basing on such model, wafer images are simulated over numerous critical dimensions (CD) of main feature (MF) with different SB widths and SB spaces to locate optimized SB rules. Two approaches of optimization strategies are proposed to meet different requirements, and are verified by commercial software. This novel scheme significantly contributes to utility of SB.</abstract><pub>IEEE</pub><doi>10.1109/ASMC.2008.4529024</doi><tpages>6</tpages></addata></record> |
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source | IEEE Electronic Library (IEL) Conference Proceedings |
subjects | Bars computer aided design Focusing Lighting Lithography Optical computing optical proximity correction Optical scattering Optical sensors resolution enhancement technology Scattering Bar Semiconductor device modeling Space technology sub-resolution assist feature Testing |
title | Novel One-Dimensional Scattering Bar Rule via Computer Aided Design |
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