Defectivity Characterization of post-CMP Voiding in 32nm Cu Metallization

Defectivity Characterization of post-CMP Voiding in 32nm Cu Metallization

The effects of various process parameters, including liner/seed deposition, electrodeposition process and chemistry, and CMP (chemical mechanical planarization), on the formation of void defects in 32 nm copper metallization was investigated using a KLA-Tencor brightfield defect detection system. Op...

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Hauptverfasser: Boye, C.A., Kelly, J.J., Canaperi, D.
Format: Tagungsbericht
Sprache:eng
Schlagworte:
Additives
Chemistry
Copper
Filling
Manufacturing processes
Metallization
Planarization
Pulp manufacturing
Semiconductor device manufacture
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creator Boye, C.A.
Kelly, J.J.
Canaperi, D.
description The effects of various process parameters, including liner/seed deposition, electrodeposition process and chemistry, and CMP (chemical mechanical planarization), on the formation of void defects in 32 nm copper metallization was investigated using a KLA-Tencor brightfield defect detection system. Optimum process conditions were determined based on void defectivity levels.
doi_str_mv 10.1109/ASMC.2008.4529008
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source IEEE Electronic Library (IEL) Conference Proceedings
subjects Additives
Chemistry
Copper
Filling
Manufacturing processes
Metallization
Planarization
Pulp manufacturing
Semiconductor device manufacture
title Defectivity Characterization of post-CMP Voiding in 32nm Cu Metallization
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