SEM-based methodology for root cause analysis of wafer edge and bevel defects
Monitoring detectivity of the wafer edge, bevel and apex - the areas beyond the pattern - is becoming increasingly important in the yield enhancement efforts of high-end fabs. In this paper we present a methodology for root cause analysis of edge and bevel defects, based on inline SEM review and EDX...
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| creator | Porat, R. Dotan, K. Hemar, S. Levin, L. Li, K. Sung, G. |
| description | Monitoring detectivity of the wafer edge, bevel and apex - the areas beyond the pattern - is becoming increasingly important in the yield enhancement efforts of high-end fabs. In this paper we present a methodology for root cause analysis of edge and bevel defects, based on inline SEM review and EDX-based material analysis. |
| doi_str_mv | 10.1109/ASMC.2008.4528998 |
| format | Conference Proceeding |
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In this paper we present a methodology for root cause analysis of edge and bevel defects, based on inline SEM review and EDX-based material analysis.</description><subject>Image edge detection</subject><subject>Monitoring</subject><subject>Morphology</subject><subject>Optical control</subject><subject>Optical films</subject><subject>Optical microscopy</subject><subject>Optical polymers</subject><subject>Scanning electron microscopy</subject><subject>Semiconductor device manufacture</subject><subject>Semiconductor materials</subject><issn>1078-8743</issn><issn>2376-6697</issn><isbn>1424419646</isbn><isbn>9781424419647</isbn><isbn>9781424419654</isbn><isbn>1424419654</isbn><fulltext>true</fulltext><rsrctype>conference_proceeding</rsrctype><creationdate>2008</creationdate><recordtype>conference_proceeding</recordtype><sourceid>6IE</sourceid><sourceid>RIE</sourceid><recordid>eNo1kMlOwzAYhM0mEUoeAHHxC6R4X45V1AJSIw6Fc-XYv0tQilEcQHl7iihzGWm-0RwGoRtK5pQSe7fYNPWcEWLmQjJjrTlBpdWGCiYEtUqKU1QwrlWllNVn6OofCHWOCkq0qYwW_BKVOb-Rg4Tkh0aBms2yqVqXIeA9jK8ppD7tJhzTgIeURuzdZwbs3l0_5S7jFPG3izBgCLvfOOAWvqDHASL4MV-ji-j6DOXRZ-hltXyuH6r10_1jvVhXHdVyrDj1imrNjGyZIN6CBE9VgBC5EKZ1nCsbFPGeS-GIohxMNEQp76g1Llo-Q7d_ux0AbD-Gbu-GaXt8hv8AWPtSEg</recordid><startdate>200805</startdate><enddate>200805</enddate><creator>Porat, R.</creator><creator>Dotan, K.</creator><creator>Hemar, S.</creator><creator>Levin, L.</creator><creator>Li, K.</creator><creator>Sung, G.</creator><general>IEEE</general><scope>6IE</scope><scope>6IH</scope><scope>CBEJK</scope><scope>RIE</scope><scope>RIO</scope></search><sort><creationdate>200805</creationdate><title>SEM-based methodology for root cause analysis of wafer edge and bevel defects</title><author>Porat, R. ; Dotan, K. ; Hemar, S. ; Levin, L. ; Li, K. ; Sung, G.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-i175t-31c6177285b240c9e5ec16dedf3448ba3369d60cc354a0613e8f8066ca198af93</frbrgroupid><rsrctype>conference_proceedings</rsrctype><prefilter>conference_proceedings</prefilter><language>eng</language><creationdate>2008</creationdate><topic>Image edge detection</topic><topic>Monitoring</topic><topic>Morphology</topic><topic>Optical control</topic><topic>Optical films</topic><topic>Optical microscopy</topic><topic>Optical polymers</topic><topic>Scanning electron microscopy</topic><topic>Semiconductor device manufacture</topic><topic>Semiconductor materials</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Porat, R.</creatorcontrib><creatorcontrib>Dotan, K.</creatorcontrib><creatorcontrib>Hemar, S.</creatorcontrib><creatorcontrib>Levin, L.</creatorcontrib><creatorcontrib>Li, K.</creatorcontrib><creatorcontrib>Sung, G.</creatorcontrib><collection>IEEE Electronic Library (IEL) Conference Proceedings</collection><collection>IEEE Proceedings Order Plan (POP) 1998-present by volume</collection><collection>IEEE Xplore All Conference Proceedings</collection><collection>IEEE Electronic Library (IEL)</collection><collection>IEEE Proceedings Order Plans (POP) 1998-present</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Porat, R.</au><au>Dotan, K.</au><au>Hemar, S.</au><au>Levin, L.</au><au>Li, K.</au><au>Sung, G.</au><format>book</format><genre>proceeding</genre><ristype>CONF</ristype><atitle>SEM-based methodology for root cause analysis of wafer edge and bevel defects</atitle><btitle>2008 IEEE/SEMI Advanced Semiconductor Manufacturing Conference</btitle><stitle>ASMC</stitle><date>2008-05</date><risdate>2008</risdate><spage>11</spage><epage>14</epage><pages>11-14</pages><issn>1078-8743</issn><eissn>2376-6697</eissn><isbn>1424419646</isbn><isbn>9781424419647</isbn><eisbn>9781424419654</eisbn><eisbn>1424419654</eisbn><abstract>Monitoring detectivity of the wafer edge, bevel and apex - the areas beyond the pattern - is becoming increasingly important in the yield enhancement efforts of high-end fabs. 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| identifier | ISSN: 1078-8743 |
| ispartof | 2008 IEEE/SEMI Advanced Semiconductor Manufacturing Conference, 2008, p.11-14 |
| issn | 1078-8743 2376-6697 |
| language | eng |
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| source | IEEE Electronic Library (IEL) Conference Proceedings |
| subjects | Image edge detection Monitoring Morphology Optical control Optical films Optical microscopy Optical polymers Scanning electron microscopy Semiconductor device manufacture Semiconductor materials |
| title | SEM-based methodology for root cause analysis of wafer edge and bevel defects |
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