Ge-Rich (70%) SiGe Nanowire MOSFET Fabricated Using Pattern-Dependent Ge-Condensation Technique

A top-down approach of forming SiGe-nanowire (SGNW) MOSFET, with Ge concentration modulated along the source/drain (Si 0.7 Ge 0.3 ) to channel (Si 0.3 Ge 0.7 ) regions, is presented. Fabricated by utilizing a pattern-size-dependent Ge-condensation technique, the SGNW heterostructure PMOS device exhi...

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Veröffentlicht in:	IEEE electron device letters 2008-06, Vol.29 (6), p.595-598
Hauptverfasser:	Jiang, Y., Singh, N., Liow, T.Y., Loh, W.Y., Balakumar, S., Hoe, K.M., Tung, C.H., Bliznetsov, V., Rustagi, S.C., Lo, G.Q., Chan, D.S.H., Kwong, D.L.
Format:	Artikel
Sprache:	eng
Schlagworte:	Applied sciences Channels Compound structure devices Devices Electronics Exact sciences and technology FETs Ge condensation Germanium Germanium silicon alloys Heterojunctions heterostructure Laboratories Microelectronics MOSFET circuits MOSFETs Nanocomposites Nanomaterials Nanostructure Nanowires Oxidation Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices SiGe nanowires (SGNWs) Silicon germanides Silicon germanium Substrates Transconductance Transistors
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