The mechanical influence of the porosity and nano-scale pore size effect of the SiOC(H) dielectric film

We propose a molecular modeling method which is capable of modeling the mechanical impact of the porosity and pore size to the amorphous silicon-based low-dielectric (low-k) material. Due to the electronic requirement of advanced electronic devices, low-k materials are in demand for the IC backend s...

Ausführliche Beschreibung

Bibliographische Detailangaben

Hauptverfasser:	Yuan, C., Flower, A.E., van der Sluis, O., Zhang, G.Q., Ernst, L.J., Cherkaoui, M., van Driel, W.D.
Format:	Tagungsbericht
Sprache:	eng
Schlagworte:	Amorphous materials Chemicals Delay effects Dielectric films Dielectric materials Equations Materials reliability Organic materials Semiconductor materials Silicon compounds
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