Quality assessment of CdZnTe (Zn ∼ 4 %) crystals

We have studied the as grown and annealed CdZnTe (Zn ~ 4 %) crystals for the assessment of their crystalline quality. As grown crystals suffer from tellurium precipitates and cadmium vacancies, which are inherent, due to retrograde solid solubility curve in the phase diagram. This is reflected in th...

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Hauptverfasser: Kulkarni, G.A., Rao, K.S.R., Raman, R., Pandey, A., Sharma, R.K., Garg, A.K., Srivastava, M.
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creator Kulkarni, G.A.
Rao, K.S.R.
Raman, R.
Pandey, A.
Sharma, R.K.
Garg, A.K.
Srivastava, M.
description We have studied the as grown and annealed CdZnTe (Zn ~ 4 %) crystals for the assessment of their crystalline quality. As grown crystals suffer from tellurium precipitates and cadmium vacancies, which are inherent, due to retrograde solid solubility curve in the phase diagram. This is reflected in the Fourier transform infrared (FTIR) spectra over the 400 - 4500 c -1 range by a strong absorption around 2661 cm -1 which corresponds to the band gap of tellurium confirming their presence, whereas a monotonic decrease in the transmission with the decrease in wave number indicates the presence of cadmium vacancies. Obviously the presence of Cd vacancies lead to the formation of tellurium precipitates confirming their presence. Annealed samples under cadmium + zinc ambient at 650 degC for 6 hours show an improvement in the transmission over the same range. This can be attributed to thermo-migration of tellurium precipitates and hence bonding with Cd or Zn to form CdZnTe. This is further supported by the reduced full width at half maximum in the X-ray diffraction rocking curve of these CdZnTe crystals. Cadmium annealing although can passivate Cd vacancy related defects and reduce the Te precipitates, as is observed in our low temperature Photoluminescence (PL) spectra, alone may not be sufficient possibly due to the loss of Zn. Vacuum annealing at 650 degC for 6 hours further deteriorated the material quality as is reflected in the low temperature PL spectra by the introduction of a new defect band around 0.85 eV and reduced IR transmission.
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As grown crystals suffer from tellurium precipitates and cadmium vacancies, which are inherent, due to retrograde solid solubility curve in the phase diagram. This is reflected in the Fourier transform infrared (FTIR) spectra over the 400 - 4500 c -1 range by a strong absorption around 2661 cm -1 which corresponds to the band gap of tellurium confirming their presence, whereas a monotonic decrease in the transmission with the decrease in wave number indicates the presence of cadmium vacancies. Obviously the presence of Cd vacancies lead to the formation of tellurium precipitates confirming their presence. Annealed samples under cadmium + zinc ambient at 650 degC for 6 hours show an improvement in the transmission over the same range. This can be attributed to thermo-migration of tellurium precipitates and hence bonding with Cd or Zn to form CdZnTe. This is further supported by the reduced full width at half maximum in the X-ray diffraction rocking curve of these CdZnTe crystals. Cadmium annealing although can passivate Cd vacancy related defects and reduce the Te precipitates, as is observed in our low temperature Photoluminescence (PL) spectra, alone may not be sufficient possibly due to the loss of Zn. 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As grown crystals suffer from tellurium precipitates and cadmium vacancies, which are inherent, due to retrograde solid solubility curve in the phase diagram. This is reflected in the Fourier transform infrared (FTIR) spectra over the 400 - 4500 c -1 range by a strong absorption around 2661 cm -1 which corresponds to the band gap of tellurium confirming their presence, whereas a monotonic decrease in the transmission with the decrease in wave number indicates the presence of cadmium vacancies. Obviously the presence of Cd vacancies lead to the formation of tellurium precipitates confirming their presence. Annealed samples under cadmium + zinc ambient at 650 degC for 6 hours show an improvement in the transmission over the same range. This can be attributed to thermo-migration of tellurium precipitates and hence bonding with Cd or Zn to form CdZnTe. This is further supported by the reduced full width at half maximum in the X-ray diffraction rocking curve of these CdZnTe crystals. Cadmium annealing although can passivate Cd vacancy related defects and reduce the Te precipitates, as is observed in our low temperature Photoluminescence (PL) spectra, alone may not be sufficient possibly due to the loss of Zn. Vacuum annealing at 650 degC for 6 hours further deteriorated the material quality as is reflected in the low temperature PL spectra by the introduction of a new defect band around 0.85 eV and reduced IR transmission.</description><subject>Annealing</subject><subject>Cadmium</subject><subject>CdZnTe</subject><subject>Crystallization</subject><subject>Fourier transforms</subject><subject>FTIR</subject><subject>Infrared spectra</subject><subject>Photoluminescence</subject><subject>precipitates</subject><subject>Quality assessment</subject><subject>retrograde</subject><subject>Solids</subject><subject>Tellurium</subject><subject>Temperature</subject><subject>thermomigration</subject><subject>Zinc</subject><isbn>9781424417278</isbn><isbn>1424417279</isbn><isbn>1424417287</isbn><isbn>9781424417285</isbn><fulltext>true</fulltext><rsrctype>conference_proceeding</rsrctype><creationdate>2007</creationdate><recordtype>conference_proceeding</recordtype><sourceid>6IE</sourceid><sourceid>RIE</sourceid><recordid>eNo1j89Kw0AYxFekoK15Ab3sRdBD4vftn-zuUVKthYKKAaGXstndQKSNko2HvIEP5dP4JEZaYeDHMMPAEHKOkCGCuVm-Pr3MMwagMiEUk0IdkSkKJgQqptUxSYzS_17pCZn-dQ3ko05IEuMbAKDKBeb8lLDnT7tt-oHaGEOMu9D29L2mhV-3ZaBX65b-fH1TQS-vqeuG2NttPCOTekRIDpyR8v6uLB7S1eNiWdyu0gaV7FOBrkLtJXdaVswEF5xk3mpfWwF5Xgs0jnngHh23tnIVKG3GnAUfrJN8Ri72s00IYfPRNTvbDZvDZf4LT6FH-A</recordid><startdate>200712</startdate><enddate>200712</enddate><creator>Kulkarni, G.A.</creator><creator>Rao, K.S.R.</creator><creator>Raman, R.</creator><creator>Pandey, A.</creator><creator>Sharma, R.K.</creator><creator>Garg, A.K.</creator><creator>Srivastava, M.</creator><general>IEEE</general><scope>6IE</scope><scope>6IL</scope><scope>CBEJK</scope><scope>RIE</scope><scope>RIL</scope></search><sort><creationdate>200712</creationdate><title>Quality assessment of CdZnTe (Zn ∼ 4 %) crystals</title><author>Kulkarni, G.A. ; Rao, K.S.R. ; Raman, R. ; Pandey, A. ; Sharma, R.K. ; Garg, A.K. ; Srivastava, M.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-i175t-41cb18d53c85b29ecec52da8dfa4066f419c2d03d1c3aabcb0789da82edeac53</frbrgroupid><rsrctype>conference_proceedings</rsrctype><prefilter>conference_proceedings</prefilter><language>eng</language><creationdate>2007</creationdate><topic>Annealing</topic><topic>Cadmium</topic><topic>CdZnTe</topic><topic>Crystallization</topic><topic>Fourier transforms</topic><topic>FTIR</topic><topic>Infrared spectra</topic><topic>Photoluminescence</topic><topic>precipitates</topic><topic>Quality assessment</topic><topic>retrograde</topic><topic>Solids</topic><topic>Tellurium</topic><topic>Temperature</topic><topic>thermomigration</topic><topic>Zinc</topic><toplevel>online_resources</toplevel><creatorcontrib>Kulkarni, G.A.</creatorcontrib><creatorcontrib>Rao, K.S.R.</creatorcontrib><creatorcontrib>Raman, R.</creatorcontrib><creatorcontrib>Pandey, A.</creatorcontrib><creatorcontrib>Sharma, R.K.</creatorcontrib><creatorcontrib>Garg, A.K.</creatorcontrib><creatorcontrib>Srivastava, M.</creatorcontrib><collection>IEEE Electronic Library (IEL) Conference Proceedings</collection><collection>IEEE Proceedings Order Plan All Online (POP All Online) 1998-present by volume</collection><collection>IEEE Xplore All Conference Proceedings</collection><collection>IEEE Electronic Library (IEL)</collection><collection>IEEE Proceedings Order Plans (POP All) 1998-Present</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Kulkarni, G.A.</au><au>Rao, K.S.R.</au><au>Raman, R.</au><au>Pandey, A.</au><au>Sharma, R.K.</au><au>Garg, A.K.</au><au>Srivastava, M.</au><format>book</format><genre>proceeding</genre><ristype>CONF</ristype><atitle>Quality assessment of CdZnTe (Zn ∼ 4 %) crystals</atitle><btitle>2007 International Workshop on Physics of Semiconductor Devices</btitle><stitle>IWPSD</stitle><date>2007-12</date><risdate>2007</risdate><spage>453</spage><epage>455</epage><pages>453-455</pages><isbn>9781424417278</isbn><isbn>1424417279</isbn><eisbn>1424417287</eisbn><eisbn>9781424417285</eisbn><abstract>We have studied the as grown and annealed CdZnTe (Zn ~ 4 %) crystals for the assessment of their crystalline quality. As grown crystals suffer from tellurium precipitates and cadmium vacancies, which are inherent, due to retrograde solid solubility curve in the phase diagram. This is reflected in the Fourier transform infrared (FTIR) spectra over the 400 - 4500 c -1 range by a strong absorption around 2661 cm -1 which corresponds to the band gap of tellurium confirming their presence, whereas a monotonic decrease in the transmission with the decrease in wave number indicates the presence of cadmium vacancies. Obviously the presence of Cd vacancies lead to the formation of tellurium precipitates confirming their presence. Annealed samples under cadmium + zinc ambient at 650 degC for 6 hours show an improvement in the transmission over the same range. This can be attributed to thermo-migration of tellurium precipitates and hence bonding with Cd or Zn to form CdZnTe. This is further supported by the reduced full width at half maximum in the X-ray diffraction rocking curve of these CdZnTe crystals. Cadmium annealing although can passivate Cd vacancy related defects and reduce the Te precipitates, as is observed in our low temperature Photoluminescence (PL) spectra, alone may not be sufficient possibly due to the loss of Zn. Vacuum annealing at 650 degC for 6 hours further deteriorated the material quality as is reflected in the low temperature PL spectra by the introduction of a new defect band around 0.85 eV and reduced IR transmission.</abstract><pub>IEEE</pub><doi>10.1109/IWPSD.2007.4472547</doi><tpages>3</tpages></addata></record>
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identifier ISBN: 9781424417278
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subjects Annealing
Cadmium
CdZnTe
Crystallization
Fourier transforms
FTIR
Infrared spectra
Photoluminescence
precipitates
Quality assessment
retrograde
Solids
Tellurium
Temperature
thermomigration
Zinc
title Quality assessment of CdZnTe (Zn ∼ 4 %) crystals
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