Porous SiO2 thin films for ULSI applications
The SiO 2 porous dielectric thin films have been sucessfully deposited by spin coating technique using HF as catalyst. The FTIR shows the main stretching Si-O-Si peak at 1074 cm -1 confirms the deposition of SiO 2 thin film. The refractive index (RI) and thickness of deposited film measured using el...
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| creator | Joshi, B.N. Mahajan, A.M. |
| description | The SiO 2 porous dielectric thin films have been sucessfully deposited by spin coating technique using HF as catalyst. The FTIR shows the main stretching Si-O-Si peak at 1074 cm -1 confirms the deposition of SiO 2 thin film. The refractive index (RI) and thickness of deposited film measured using ellipsometer is 1.3332 and 2868 A 0 respectively. The porosity calculated from the RI is 27.4 % and dielectric constant is determined to be of 3.1. The SEM image confirms the presence of nanopores in the films. These nanopores enhance the film strength and lowers the dielectric constant which improves the suitability of the film to be used as an interlayer dielectrics for ULSI applications. |
| doi_str_mv | 10.1109/IWPSD.2007.4472496 |
| format | Conference Proceeding |
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The FTIR shows the main stretching Si-O-Si peak at 1074 cm -1 confirms the deposition of SiO 2 thin film. The refractive index (RI) and thickness of deposited film measured using ellipsometer is 1.3332 and 2868 A 0 respectively. The porosity calculated from the RI is 27.4 % and dielectric constant is determined to be of 3.1. The SEM image confirms the presence of nanopores in the films. These nanopores enhance the film strength and lowers the dielectric constant which improves the suitability of the film to be used as an interlayer dielectrics for ULSI applications.</description><identifier>ISBN: 9781424417278</identifier><identifier>ISBN: 1424417279</identifier><identifier>EISBN: 1424417287</identifier><identifier>EISBN: 9781424417285</identifier><identifier>DOI: 10.1109/IWPSD.2007.4472496</identifier><identifier>LCCN: 2007906906</identifier><language>eng</language><publisher>IEEE</publisher><subject>Coatings ; Dielectric constant ; Dielectric measurements ; Dielectric thin films ; Hafnium ; HF catalyst ; Interlayer dielectrics ; low dielectric constant ; nanopores ; Nanoporous materials ; Optical films ; Porous SiO 2 ; Refractive index ; Sputtering ; Thickness measurement</subject><ispartof>2007 International Workshop on Physics of Semiconductor Devices, 2007, p.261-263</ispartof><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://ieeexplore.ieee.org/document/4472496$$EHTML$$P50$$Gieee$$H</linktohtml><link.rule.ids>309,310,776,780,785,786,2052,27902,54895</link.rule.ids><linktorsrc>$$Uhttps://ieeexplore.ieee.org/document/4472496$$EView_record_in_IEEE$$FView_record_in_$$GIEEE</linktorsrc></links><search><creatorcontrib>Joshi, B.N.</creatorcontrib><creatorcontrib>Mahajan, A.M.</creatorcontrib><title>Porous SiO2 thin films for ULSI applications</title><title>2007 International Workshop on Physics of Semiconductor Devices</title><addtitle>IWPSD</addtitle><description>The SiO 2 porous dielectric thin films have been sucessfully deposited by spin coating technique using HF as catalyst. The FTIR shows the main stretching Si-O-Si peak at 1074 cm -1 confirms the deposition of SiO 2 thin film. The refractive index (RI) and thickness of deposited film measured using ellipsometer is 1.3332 and 2868 A 0 respectively. The porosity calculated from the RI is 27.4 % and dielectric constant is determined to be of 3.1. The SEM image confirms the presence of nanopores in the films. These nanopores enhance the film strength and lowers the dielectric constant which improves the suitability of the film to be used as an interlayer dielectrics for ULSI applications.</description><subject>Coatings</subject><subject>Dielectric constant</subject><subject>Dielectric measurements</subject><subject>Dielectric thin films</subject><subject>Hafnium</subject><subject>HF catalyst</subject><subject>Interlayer dielectrics</subject><subject>low dielectric constant</subject><subject>nanopores</subject><subject>Nanoporous materials</subject><subject>Optical films</subject><subject>Porous SiO 2</subject><subject>Refractive index</subject><subject>Sputtering</subject><subject>Thickness measurement</subject><isbn>9781424417278</isbn><isbn>1424417279</isbn><isbn>1424417287</isbn><isbn>9781424417285</isbn><fulltext>true</fulltext><rsrctype>conference_proceeding</rsrctype><creationdate>2007</creationdate><recordtype>conference_proceeding</recordtype><sourceid>6IE</sourceid><sourceid>RIE</sourceid><recordid>eNo1j11LwzAYhSMy0G39A3qTH2BrPt7mTS5lfhUKG3TDy5HYBCPdWpp64b934oQDhwMPh3MIueGs4JyZ--pt0zwWgjEsAFCAURdkzkEAcBQaL0lmUP9n1DMy_2UNUyddkSylT8YYRwVcyWtyt-nH_ivRJq4FnT7ikYbYHRIN_Uh3dVNROwxdfLdT7I9pSWbBdslnZ1-Q3fPTdvWa1-uXavVQ55FjOeWlNG3rtbbCO2OkY8KZ0xJEgxKU0lgy7sBqFMEHlApK761tpXMctVAoF-T2rzd67_fDGA92_N6f38ofDmJD_A</recordid><startdate>200712</startdate><enddate>200712</enddate><creator>Joshi, B.N.</creator><creator>Mahajan, A.M.</creator><general>IEEE</general><scope>6IE</scope><scope>6IL</scope><scope>CBEJK</scope><scope>RIE</scope><scope>RIL</scope></search><sort><creationdate>200712</creationdate><title>Porous SiO2 thin films for ULSI applications</title><author>Joshi, B.N. ; Mahajan, A.M.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-i175t-539dde88a2eb993b02b92787797346687501b4a872fef73645eeaad3bb1782673</frbrgroupid><rsrctype>conference_proceedings</rsrctype><prefilter>conference_proceedings</prefilter><language>eng</language><creationdate>2007</creationdate><topic>Coatings</topic><topic>Dielectric constant</topic><topic>Dielectric measurements</topic><topic>Dielectric thin films</topic><topic>Hafnium</topic><topic>HF catalyst</topic><topic>Interlayer dielectrics</topic><topic>low dielectric constant</topic><topic>nanopores</topic><topic>Nanoporous materials</topic><topic>Optical films</topic><topic>Porous SiO 2</topic><topic>Refractive index</topic><topic>Sputtering</topic><topic>Thickness measurement</topic><toplevel>online_resources</toplevel><creatorcontrib>Joshi, B.N.</creatorcontrib><creatorcontrib>Mahajan, A.M.</creatorcontrib><collection>IEEE Electronic Library (IEL) Conference Proceedings</collection><collection>IEEE Proceedings Order Plan All Online (POP All Online) 1998-present by volume</collection><collection>IEEE Xplore All Conference Proceedings</collection><collection>IEEE Xplore</collection><collection>IEEE Proceedings Order Plans (POP All) 1998-Present</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Joshi, B.N.</au><au>Mahajan, A.M.</au><format>book</format><genre>proceeding</genre><ristype>CONF</ristype><atitle>Porous SiO2 thin films for ULSI applications</atitle><btitle>2007 International Workshop on Physics of Semiconductor Devices</btitle><stitle>IWPSD</stitle><date>2007-12</date><risdate>2007</risdate><spage>261</spage><epage>263</epage><pages>261-263</pages><isbn>9781424417278</isbn><isbn>1424417279</isbn><eisbn>1424417287</eisbn><eisbn>9781424417285</eisbn><abstract>The SiO 2 porous dielectric thin films have been sucessfully deposited by spin coating technique using HF as catalyst. The FTIR shows the main stretching Si-O-Si peak at 1074 cm -1 confirms the deposition of SiO 2 thin film. The refractive index (RI) and thickness of deposited film measured using ellipsometer is 1.3332 and 2868 A 0 respectively. The porosity calculated from the RI is 27.4 % and dielectric constant is determined to be of 3.1. The SEM image confirms the presence of nanopores in the films. These nanopores enhance the film strength and lowers the dielectric constant which improves the suitability of the film to be used as an interlayer dielectrics for ULSI applications.</abstract><pub>IEEE</pub><doi>10.1109/IWPSD.2007.4472496</doi><tpages>3</tpages></addata></record> |
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| subjects | Coatings Dielectric constant Dielectric measurements Dielectric thin films Hafnium HF catalyst Interlayer dielectrics low dielectric constant nanopores Nanoporous materials Optical films Porous SiO 2 Refractive index Sputtering Thickness measurement |
| title | Porous SiO2 thin films for ULSI applications |
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