A Highly pH-Sensitive Eelectrolyte Insulator Semi-conductor Element Using A Stack of Anodic Gd Oxide/Silicon Oxide
In this paper, the Gd 2 O 3 /SiO 2 stacks were fabricated in an anodic oxidation method and used as a pH-sensitive electrolyte insulator semiconductor (EIS) element for pH value test. Several outstanding results are obtained, they are: (1) The higher pH-value solution the EIS samples were immersed i...
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| creator | Huang, C.T. Chen, M.Y. Chen, J.Y. Chen, S.N. Ko, H.H. |
| description | In this paper, the Gd 2 O 3 /SiO 2 stacks were fabricated in an anodic oxidation method and used as a pH-sensitive electrolyte insulator semiconductor (EIS) element for pH value test. Several outstanding results are obtained, they are: (1) The higher pH-value solution the EIS samples were immersed in, the more rugged surface the films were observed. (2) The etched thickness of the Gd 2 O 3 layer almost linearly increases with the decrease of pH value. (3) The C-V curves for EIS samples etched with decedent pH- value solutions were shifted to right in a ratio around 56.72 mV/pH. (4) When fixing in the same capacitance, the linear factor of the voltage compared with a fitting linear curve is 99.98%, which is much closed to ideal case. From those results, the Gd 2 O 3 oxide can be adequately regarded as a pH-sensitive EIS device for the bio-medicine test of the human blood, urine and even saliva, of which pH-values may be changed by different syndromes of diseases. |
| doi_str_mv | 10.1109/EDSSC.2007.4450250 |
| format | Conference Proceeding |
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Several outstanding results are obtained, they are: (1) The higher pH-value solution the EIS samples were immersed in, the more rugged surface the films were observed. (2) The etched thickness of the Gd 2 O 3 layer almost linearly increases with the decrease of pH value. (3) The C-V curves for EIS samples etched with decedent pH- value solutions were shifted to right in a ratio around 56.72 mV/pH. (4) When fixing in the same capacitance, the linear factor of the voltage compared with a fitting linear curve is 99.98%, which is much closed to ideal case. From those results, the Gd 2 O 3 oxide can be adequately regarded as a pH-sensitive EIS device for the bio-medicine test of the human blood, urine and even saliva, of which pH-values may be changed by different syndromes of diseases.</description><identifier>ISBN: 1424406366</identifier><identifier>ISBN: 9781424406364</identifier><identifier>EISBN: 1424406374</identifier><identifier>EISBN: 9781424406371</identifier><identifier>DOI: 10.1109/EDSSC.2007.4450250</identifier><language>eng</language><publisher>IEEE</publisher><subject>Capacitance ; Capacitance-voltage characteristics ; Etching ; Insulation ; Insulator testing ; Oxidation ; Semiconductor device testing ; Semiconductor films ; Silicon ; Voltage</subject><ispartof>2007 IEEE Conference on Electron Devices and Solid-State Circuits, 2007, p.813-816</ispartof><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://ieeexplore.ieee.org/document/4450250$$EHTML$$P50$$Gieee$$H</linktohtml><link.rule.ids>309,310,776,780,785,786,2052,27904,54898</link.rule.ids><linktorsrc>$$Uhttps://ieeexplore.ieee.org/document/4450250$$EView_record_in_IEEE$$FView_record_in_$$GIEEE</linktorsrc></links><search><creatorcontrib>Huang, C.T.</creatorcontrib><creatorcontrib>Chen, M.Y.</creatorcontrib><creatorcontrib>Chen, J.Y.</creatorcontrib><creatorcontrib>Chen, S.N.</creatorcontrib><creatorcontrib>Ko, H.H.</creatorcontrib><title>A Highly pH-Sensitive Eelectrolyte Insulator Semi-conductor Element Using A Stack of Anodic Gd Oxide/Silicon Oxide</title><title>2007 IEEE Conference on Electron Devices and Solid-State Circuits</title><addtitle>EDSSC</addtitle><description>In this paper, the Gd 2 O 3 /SiO 2 stacks were fabricated in an anodic oxidation method and used as a pH-sensitive electrolyte insulator semiconductor (EIS) element for pH value test. Several outstanding results are obtained, they are: (1) The higher pH-value solution the EIS samples were immersed in, the more rugged surface the films were observed. (2) The etched thickness of the Gd 2 O 3 layer almost linearly increases with the decrease of pH value. (3) The C-V curves for EIS samples etched with decedent pH- value solutions were shifted to right in a ratio around 56.72 mV/pH. (4) When fixing in the same capacitance, the linear factor of the voltage compared with a fitting linear curve is 99.98%, which is much closed to ideal case. 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Several outstanding results are obtained, they are: (1) The higher pH-value solution the EIS samples were immersed in, the more rugged surface the films were observed. (2) The etched thickness of the Gd 2 O 3 layer almost linearly increases with the decrease of pH value. (3) The C-V curves for EIS samples etched with decedent pH- value solutions were shifted to right in a ratio around 56.72 mV/pH. (4) When fixing in the same capacitance, the linear factor of the voltage compared with a fitting linear curve is 99.98%, which is much closed to ideal case. From those results, the Gd 2 O 3 oxide can be adequately regarded as a pH-sensitive EIS device for the bio-medicine test of the human blood, urine and even saliva, of which pH-values may be changed by different syndromes of diseases.</abstract><pub>IEEE</pub><doi>10.1109/EDSSC.2007.4450250</doi></addata></record> |
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| subjects | Capacitance Capacitance-voltage characteristics Etching Insulation Insulator testing Oxidation Semiconductor device testing Semiconductor films Silicon Voltage |
| title | A Highly pH-Sensitive Eelectrolyte Insulator Semi-conductor Element Using A Stack of Anodic Gd Oxide/Silicon Oxide |
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