A New Analytical Method for Robust Extraction of the Small-Signal Equivalent Circuit for SiGe HBTs Operating at Cryogenic Temperatures
We present a new analytical direct parameter-extraction methodology for obtaining the small-signal equivalent circuit of HBTs. It is applied to cryogenically operated SiGe HBTs as a means to allow circuit design of SiGe HBT low-noise amplifiers for cooled radio astronomy applications. We split the t...
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| Veröffentlicht in: | IEEE transactions on microwave theory and techniques 2008-03, Vol.56 (3), p.568-574 |
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| container_title | IEEE transactions on microwave theory and techniques |
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| creator | Olvera-Cervantes, J.-L. Cressler, J.D. Medina-Monroy, J.-L. Thrivikraman, T. Banerjee, B. Laskar, J. |
| description | We present a new analytical direct parameter-extraction methodology for obtaining the small-signal equivalent circuit of HBTs. It is applied to cryogenically operated SiGe HBTs as a means to allow circuit design of SiGe HBT low-noise amplifiers for cooled radio astronomy applications. We split the transistor into an intrinsic transistor (IT) piece modeled as a Pi-topology, and the quasi-intrinsic transistor (QIT), obtained from the IT after that the base resistance (R b ) has been removed. The relations between Z-Y-parameters of the IT and QIT are then established, allowing us to propose a new methodology for determining R b . The present extraction method differs from previous studies in that each of the model elements are obtained from exact equations that do not require any approximations, numerical optimization, or post-processing. The validity of this new extraction methodology is demonstrated by applying it to third-generation SiGe HBTs operating at liquid-nitrogen temperature (77 K) across the frequency range of 2-22 GHz. |
| doi_str_mv | 10.1109/TMTT.2008.916917 |
| format | Article |
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It is applied to cryogenically operated SiGe HBTs as a means to allow circuit design of SiGe HBT low-noise amplifiers for cooled radio astronomy applications. We split the transistor into an intrinsic transistor (IT) piece modeled as a Pi-topology, and the quasi-intrinsic transistor (QIT), obtained from the IT after that the base resistance (R b ) has been removed. The relations between Z-Y-parameters of the IT and QIT are then established, allowing us to propose a new methodology for determining R b . The present extraction method differs from previous studies in that each of the model elements are obtained from exact equations that do not require any approximations, numerical optimization, or post-processing. The validity of this new extraction methodology is demonstrated by applying it to third-generation SiGe HBTs operating at liquid-nitrogen temperature (77 K) across the frequency range of 2-22 GHz.</description><identifier>ISSN: 0018-9480</identifier><identifier>EISSN: 1557-9670</identifier><identifier>DOI: 10.1109/TMTT.2008.916917</identifier><identifier>CODEN: IETMAB</identifier><language>eng</language><publisher>New York, NY: IEEE</publisher><subject>Amplifiers ; Applied sciences ; Base resistance ; Circuit properties ; Circuit synthesis ; cryogenic electronics ; Cryogenics ; Electric, optical and optoelectronic circuits ; Electronic circuits ; Electronics ; Equivalent circuits ; Exact sciences and technology ; Extraction ; Germanium silicon alloys ; Heterojunction bipolar transistors ; Information technology ; Low-noise amplifiers ; Mathematical analysis ; Mathematical models ; Methodology ; Microwave and submillimeter wave devices, electron transfer devices ; microwave SiGe HBTs ; Radio astronomy ; Robustness ; S -parameters ; Semiconductor devices ; Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices ; Silicon germanides ; Silicon germanium ; small-signal equivalent circuit ; Studies ; Temperature ; Transistors</subject><ispartof>IEEE transactions on microwave theory and techniques, 2008-03, Vol.56 (3), p.568-574</ispartof><rights>2008 INIST-CNRS</rights><rights>Copyright The Institute of Electrical and Electronics Engineers, Inc. (IEEE) 2008</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c298t-1da4fcaa0709e439676ab6c5b7a565809a47bfa9f19f6df7a170abb388d32343</citedby><cites>FETCH-LOGICAL-c298t-1da4fcaa0709e439676ab6c5b7a565809a47bfa9f19f6df7a170abb388d32343</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://ieeexplore.ieee.org/document/4449067$$EHTML$$P50$$Gieee$$H</linktohtml><link.rule.ids>314,780,784,796,27924,27925,54758</link.rule.ids><linktorsrc>$$Uhttps://ieeexplore.ieee.org/document/4449067$$EView_record_in_IEEE$$FView_record_in_$$GIEEE</linktorsrc><backlink>$$Uhttp://pascal-francis.inist.fr/vibad/index.php?action=getRecordDetail&idt=20188619$$DView record in Pascal Francis$$Hfree_for_read</backlink></links><search><creatorcontrib>Olvera-Cervantes, J.-L.</creatorcontrib><creatorcontrib>Cressler, J.D.</creatorcontrib><creatorcontrib>Medina-Monroy, J.-L.</creatorcontrib><creatorcontrib>Thrivikraman, T.</creatorcontrib><creatorcontrib>Banerjee, B.</creatorcontrib><creatorcontrib>Laskar, J.</creatorcontrib><title>A New Analytical Method for Robust Extraction of the Small-Signal Equivalent Circuit for SiGe HBTs Operating at Cryogenic Temperatures</title><title>IEEE transactions on microwave theory and techniques</title><addtitle>TMTT</addtitle><description>We present a new analytical direct parameter-extraction methodology for obtaining the small-signal equivalent circuit of HBTs. It is applied to cryogenically operated SiGe HBTs as a means to allow circuit design of SiGe HBT low-noise amplifiers for cooled radio astronomy applications. We split the transistor into an intrinsic transistor (IT) piece modeled as a Pi-topology, and the quasi-intrinsic transistor (QIT), obtained from the IT after that the base resistance (R b ) has been removed. The relations between Z-Y-parameters of the IT and QIT are then established, allowing us to propose a new methodology for determining R b . The present extraction method differs from previous studies in that each of the model elements are obtained from exact equations that do not require any approximations, numerical optimization, or post-processing. The validity of this new extraction methodology is demonstrated by applying it to third-generation SiGe HBTs operating at liquid-nitrogen temperature (77 K) across the frequency range of 2-22 GHz.</description><subject>Amplifiers</subject><subject>Applied sciences</subject><subject>Base resistance</subject><subject>Circuit properties</subject><subject>Circuit synthesis</subject><subject>cryogenic electronics</subject><subject>Cryogenics</subject><subject>Electric, optical and optoelectronic circuits</subject><subject>Electronic circuits</subject><subject>Electronics</subject><subject>Equivalent circuits</subject><subject>Exact sciences and technology</subject><subject>Extraction</subject><subject>Germanium silicon alloys</subject><subject>Heterojunction bipolar transistors</subject><subject>Information technology</subject><subject>Low-noise amplifiers</subject><subject>Mathematical analysis</subject><subject>Mathematical models</subject><subject>Methodology</subject><subject>Microwave and submillimeter wave devices, electron transfer devices</subject><subject>microwave SiGe HBTs</subject><subject>Radio astronomy</subject><subject>Robustness</subject><subject>S -parameters</subject><subject>Semiconductor devices</subject><subject>Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices</subject><subject>Silicon germanides</subject><subject>Silicon germanium</subject><subject>small-signal equivalent circuit</subject><subject>Studies</subject><subject>Temperature</subject><subject>Transistors</subject><issn>0018-9480</issn><issn>1557-9670</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2008</creationdate><recordtype>article</recordtype><sourceid>RIE</sourceid><recordid>eNp9kUFv0zAYhi0EEmVwR-JiIcFOKZ8TJ7aPpeo2pI1JNPfoi2t3ntK4sx2gf4DfjbtOO3DgZFnf876yv4eQ9wzmjIH60t607bwEkHPFGsXECzJjdS0K1Qh4SWYATBaKS3hN3sR4n6-8Bjkjfxb0u_lFFyMOh-Q0DvTGpDu_odYH-sP3U0x09TsF1Mn5kXpL052h6x0OQ7F22xyjq4fJ_cTBjIkuXdCTS4_htbs09OprG-nt3gRMbtxSzEg4-K0Znaat2T0OpmDiW_LK4hDNu6fzjLQXq3Z5VVzfXn5bLq4LXSqZCrZBbjUiCFCGV_lvDfaNrnuBdVNLUMhFb1FZpmyzsQKZAOz7SspNVVa8OiPnp9p98A-TianbuajNMOBo_BQ7KWrgDVMsk5__S1Z5fZwDZPDjP-C9n0LeS25rSiahqmSG4ATp4GMMxnb74HYYDh2D7qivO-rrjvq6k74c-fTUizFrsQFH7eJzrsw-ZX5p5j6cOGeMeR5zzhU0ovoLU8Sjnw</recordid><startdate>200803</startdate><enddate>200803</enddate><creator>Olvera-Cervantes, J.-L.</creator><creator>Cressler, J.D.</creator><creator>Medina-Monroy, J.-L.</creator><creator>Thrivikraman, T.</creator><creator>Banerjee, B.</creator><creator>Laskar, J.</creator><general>IEEE</general><general>Institute of Electrical and Electronics Engineers</general><general>The Institute of Electrical and Electronics Engineers, Inc. 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Microelectronics. Optoelectronics. Solid state devices</topic><topic>Silicon germanides</topic><topic>Silicon germanium</topic><topic>small-signal equivalent circuit</topic><topic>Studies</topic><topic>Temperature</topic><topic>Transistors</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Olvera-Cervantes, J.-L.</creatorcontrib><creatorcontrib>Cressler, J.D.</creatorcontrib><creatorcontrib>Medina-Monroy, J.-L.</creatorcontrib><creatorcontrib>Thrivikraman, T.</creatorcontrib><creatorcontrib>Banerjee, B.</creatorcontrib><creatorcontrib>Laskar, J.</creatorcontrib><collection>IEEE All-Society Periodicals Package (ASPP) 2005-present</collection><collection>IEEE All-Society Periodicals Package (ASPP) 1998-Present</collection><collection>IEEE Electronic Library (IEL)</collection><collection>Pascal-Francis</collection><collection>CrossRef</collection><collection>Electronics & Communications Abstracts</collection><collection>Technology Research Database</collection><collection>Advanced Technologies Database with Aerospace</collection><collection>ANTE: Abstracts in New Technology & Engineering</collection><collection>Engineering Research Database</collection><jtitle>IEEE transactions on microwave theory and techniques</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Olvera-Cervantes, J.-L.</au><au>Cressler, J.D.</au><au>Medina-Monroy, J.-L.</au><au>Thrivikraman, T.</au><au>Banerjee, B.</au><au>Laskar, J.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>A New Analytical Method for Robust Extraction of the Small-Signal Equivalent Circuit for SiGe HBTs Operating at Cryogenic Temperatures</atitle><jtitle>IEEE transactions on microwave theory and techniques</jtitle><stitle>TMTT</stitle><date>2008-03</date><risdate>2008</risdate><volume>56</volume><issue>3</issue><spage>568</spage><epage>574</epage><pages>568-574</pages><issn>0018-9480</issn><eissn>1557-9670</eissn><coden>IETMAB</coden><abstract>We present a new analytical direct parameter-extraction methodology for obtaining the small-signal equivalent circuit of HBTs. It is applied to cryogenically operated SiGe HBTs as a means to allow circuit design of SiGe HBT low-noise amplifiers for cooled radio astronomy applications. We split the transistor into an intrinsic transistor (IT) piece modeled as a Pi-topology, and the quasi-intrinsic transistor (QIT), obtained from the IT after that the base resistance (R b ) has been removed. The relations between Z-Y-parameters of the IT and QIT are then established, allowing us to propose a new methodology for determining R b . The present extraction method differs from previous studies in that each of the model elements are obtained from exact equations that do not require any approximations, numerical optimization, or post-processing. The validity of this new extraction methodology is demonstrated by applying it to third-generation SiGe HBTs operating at liquid-nitrogen temperature (77 K) across the frequency range of 2-22 GHz.</abstract><cop>New York, NY</cop><pub>IEEE</pub><doi>10.1109/TMTT.2008.916917</doi><tpages>7</tpages></addata></record> |
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| subjects | Amplifiers Applied sciences Base resistance Circuit properties Circuit synthesis cryogenic electronics Cryogenics Electric, optical and optoelectronic circuits Electronic circuits Electronics Equivalent circuits Exact sciences and technology Extraction Germanium silicon alloys Heterojunction bipolar transistors Information technology Low-noise amplifiers Mathematical analysis Mathematical models Methodology Microwave and submillimeter wave devices, electron transfer devices microwave SiGe HBTs Radio astronomy Robustness S -parameters Semiconductor devices Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices Silicon germanides Silicon germanium small-signal equivalent circuit Studies Temperature Transistors |
| title | A New Analytical Method for Robust Extraction of the Small-Signal Equivalent Circuit for SiGe HBTs Operating at Cryogenic Temperatures |
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