Tunable Highly Linear Floating-Gate CMOS Resistor Using Common-Mode Linearization Technique
In this paper, an implementation of a tunable highly linear floating resistor that can be fully integrated in CMOS technology is presented. The second-order effects of a single MOS transistor operating in the triode operation regime are described, and a common-mode linearization technique is applied...
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| Veröffentlicht in: | IEEE transactions on circuits and systems. I, Regular papers Regular papers, 2008-05, Vol.55 (4), p.999-1010 |
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| container_title | IEEE transactions on circuits and systems. I, Regular papers |
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| creator | Ozalevli, E. Hasler, P.E. |
| description | In this paper, an implementation of a tunable highly linear floating resistor that can be fully integrated in CMOS technology is presented. The second-order effects of a single MOS transistor operating in the triode operation regime are described, and a common-mode linearization technique is applied to suppress these nonlinearities. This technique is implemented by utilizing a low-power circuit design strategy that exploits the capacitive coupling and the charge storage properties of floating-gate transistors. The resistance of the proposed circuit is tuned by utilizing the Fowler-Nordheim tunneling and hot-electron injection quantum-mechanical phenomena. We demonstrate the use of this resistor in highly linear amplifier. We present experimental data from the chips that were fabricated in a 0.5- CMOS process. We show that this resistor exhibits 0.024% total harmonic distortion (THD) for a sine wave with amplitude. Also, we show the programmability of the amplifier gain using the proposed tunable resistor. |
| doi_str_mv | 10.1109/TCSI.2008.916459 |
| format | Article |
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The second-order effects of a single MOS transistor operating in the triode operation regime are described, and a common-mode linearization technique is applied to suppress these nonlinearities. This technique is implemented by utilizing a low-power circuit design strategy that exploits the capacitive coupling and the charge storage properties of floating-gate transistors. The resistance of the proposed circuit is tuned by utilizing the Fowler-Nordheim tunneling and hot-electron injection quantum-mechanical phenomena. We demonstrate the use of this resistor in highly linear amplifier. We present experimental data from the chips that were fabricated in a 0.5- CMOS process. We show that this resistor exhibits 0.024% total harmonic distortion (THD) for a sine wave with amplitude. Also, we show the programmability of the amplifier gain using the proposed tunable resistor.</description><identifier>ISSN: 1549-8328</identifier><identifier>EISSN: 1558-0806</identifier><identifier>DOI: 10.1109/TCSI.2008.916459</identifier><identifier>CODEN: ITCSCH</identifier><language>eng</language><publisher>New York: IEEE</publisher><subject>Circuit design ; Circuit synthesis ; Circuits ; CMOS ; CMOS technology ; Coupling circuits ; floating gate ; Integrated circuit technology ; Linearization ; Linearization techniques ; MOSFETs ; resistor ; Resistors ; Semiconductor devices ; Sine waves ; Transistors ; tunable ; Tunable circuits and devices ; Tuned circuits ; Tunneling</subject><ispartof>IEEE transactions on circuits and systems. I, Regular papers, 2008-05, Vol.55 (4), p.999-1010</ispartof><rights>Copyright The Institute of Electrical and Electronics Engineers, Inc. (IEEE) 2008</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c353t-d3b659dc7132396b7629a9254476a04107b2820b51d36bc6f1bc28f4c951dadf3</citedby><cites>FETCH-LOGICAL-c353t-d3b659dc7132396b7629a9254476a04107b2820b51d36bc6f1bc28f4c951dadf3</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://ieeexplore.ieee.org/document/4433428$$EHTML$$P50$$Gieee$$H</linktohtml><link.rule.ids>314,776,780,792,27901,27902,54733</link.rule.ids><linktorsrc>$$Uhttps://ieeexplore.ieee.org/document/4433428$$EView_record_in_IEEE$$FView_record_in_$$GIEEE</linktorsrc></links><search><creatorcontrib>Ozalevli, E.</creatorcontrib><creatorcontrib>Hasler, P.E.</creatorcontrib><title>Tunable Highly Linear Floating-Gate CMOS Resistor Using Common-Mode Linearization Technique</title><title>IEEE transactions on circuits and systems. I, Regular papers</title><addtitle>TCSI</addtitle><description>In this paper, an implementation of a tunable highly linear floating resistor that can be fully integrated in CMOS technology is presented. The second-order effects of a single MOS transistor operating in the triode operation regime are described, and a common-mode linearization technique is applied to suppress these nonlinearities. This technique is implemented by utilizing a low-power circuit design strategy that exploits the capacitive coupling and the charge storage properties of floating-gate transistors. The resistance of the proposed circuit is tuned by utilizing the Fowler-Nordheim tunneling and hot-electron injection quantum-mechanical phenomena. We demonstrate the use of this resistor in highly linear amplifier. We present experimental data from the chips that were fabricated in a 0.5- CMOS process. We show that this resistor exhibits 0.024% total harmonic distortion (THD) for a sine wave with amplitude. Also, we show the programmability of the amplifier gain using the proposed tunable resistor.</description><subject>Circuit design</subject><subject>Circuit synthesis</subject><subject>Circuits</subject><subject>CMOS</subject><subject>CMOS technology</subject><subject>Coupling circuits</subject><subject>floating gate</subject><subject>Integrated circuit technology</subject><subject>Linearization</subject><subject>Linearization techniques</subject><subject>MOSFETs</subject><subject>resistor</subject><subject>Resistors</subject><subject>Semiconductor devices</subject><subject>Sine waves</subject><subject>Transistors</subject><subject>tunable</subject><subject>Tunable circuits and devices</subject><subject>Tuned circuits</subject><subject>Tunneling</subject><issn>1549-8328</issn><issn>1558-0806</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2008</creationdate><recordtype>article</recordtype><sourceid>RIE</sourceid><recordid>eNp9kTtPwzAUhSMEEqWwI7FEDDClXD9jjyiiD6lVJdpODJaTOK2rNIY4Hcqvx1UrBgYmX_l-575OFN0jGCAE8mWZLSYDDCAGEnHK5EXUQ4yJBATwy2NMZSIIFtfRjfdbACyBoF70sdw3Oq9NPLbrTX2Ip7Yxuo2HtdOdbdbJSHcmzmbzRfxuvPWda-OVD4k4c7uda5KZK81ZZL-DxDXx0hSbxn7tzW10Venam7vz249Ww7dlNk6m89Eke50mBWGkS0qScybLIkUEE8nzlGOpJWaUplwDRZDmWGDIGSoJzwteobzAoqKFDD-6rEg_ej7V_WxdaOs7tbO-MHWtG-P2XolwAgahVyCf_iUJZYSlgAP4-Afcun3bhC2U4GFMQDINEJygonXet6ZSn63d6fagEKijKepoijqaok6mBMnDSWKNMb84pYRQLMgPnICGjA</recordid><startdate>20080501</startdate><enddate>20080501</enddate><creator>Ozalevli, E.</creator><creator>Hasler, P.E.</creator><general>IEEE</general><general>The Institute of Electrical and Electronics Engineers, Inc. (IEEE)</general><scope>97E</scope><scope>RIA</scope><scope>RIE</scope><scope>AAYXX</scope><scope>CITATION</scope><scope>7SP</scope><scope>8FD</scope><scope>L7M</scope><scope>F28</scope><scope>FR3</scope></search><sort><creationdate>20080501</creationdate><title>Tunable Highly Linear Floating-Gate CMOS Resistor Using Common-Mode Linearization Technique</title><author>Ozalevli, E. ; Hasler, P.E.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c353t-d3b659dc7132396b7629a9254476a04107b2820b51d36bc6f1bc28f4c951dadf3</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2008</creationdate><topic>Circuit design</topic><topic>Circuit synthesis</topic><topic>Circuits</topic><topic>CMOS</topic><topic>CMOS technology</topic><topic>Coupling circuits</topic><topic>floating gate</topic><topic>Integrated circuit technology</topic><topic>Linearization</topic><topic>Linearization techniques</topic><topic>MOSFETs</topic><topic>resistor</topic><topic>Resistors</topic><topic>Semiconductor devices</topic><topic>Sine waves</topic><topic>Transistors</topic><topic>tunable</topic><topic>Tunable circuits and devices</topic><topic>Tuned circuits</topic><topic>Tunneling</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Ozalevli, E.</creatorcontrib><creatorcontrib>Hasler, P.E.</creatorcontrib><collection>IEEE All-Society Periodicals Package (ASPP) 2005-present</collection><collection>IEEE All-Society Periodicals Package (ASPP) 1998-Present</collection><collection>IEEE Electronic Library (IEL)</collection><collection>CrossRef</collection><collection>Electronics & Communications Abstracts</collection><collection>Technology Research Database</collection><collection>Advanced Technologies Database with Aerospace</collection><collection>ANTE: Abstracts in New Technology & Engineering</collection><collection>Engineering Research Database</collection><jtitle>IEEE transactions on circuits and systems. I, Regular papers</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Ozalevli, E.</au><au>Hasler, P.E.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Tunable Highly Linear Floating-Gate CMOS Resistor Using Common-Mode Linearization Technique</atitle><jtitle>IEEE transactions on circuits and systems. I, Regular papers</jtitle><stitle>TCSI</stitle><date>2008-05-01</date><risdate>2008</risdate><volume>55</volume><issue>4</issue><spage>999</spage><epage>1010</epage><pages>999-1010</pages><issn>1549-8328</issn><eissn>1558-0806</eissn><coden>ITCSCH</coden><abstract>In this paper, an implementation of a tunable highly linear floating resistor that can be fully integrated in CMOS technology is presented. The second-order effects of a single MOS transistor operating in the triode operation regime are described, and a common-mode linearization technique is applied to suppress these nonlinearities. This technique is implemented by utilizing a low-power circuit design strategy that exploits the capacitive coupling and the charge storage properties of floating-gate transistors. The resistance of the proposed circuit is tuned by utilizing the Fowler-Nordheim tunneling and hot-electron injection quantum-mechanical phenomena. We demonstrate the use of this resistor in highly linear amplifier. We present experimental data from the chips that were fabricated in a 0.5- CMOS process. We show that this resistor exhibits 0.024% total harmonic distortion (THD) for a sine wave with amplitude. Also, we show the programmability of the amplifier gain using the proposed tunable resistor.</abstract><cop>New York</cop><pub>IEEE</pub><doi>10.1109/TCSI.2008.916459</doi><tpages>12</tpages></addata></record> |
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| ispartof | IEEE transactions on circuits and systems. I, Regular papers, 2008-05, Vol.55 (4), p.999-1010 |
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| language | eng |
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| source | IEEE Electronic Library (IEL) |
| subjects | Circuit design Circuit synthesis Circuits CMOS CMOS technology Coupling circuits floating gate Integrated circuit technology Linearization Linearization techniques MOSFETs resistor Resistors Semiconductor devices Sine waves Transistors tunable Tunable circuits and devices Tuned circuits Tunneling |
| title | Tunable Highly Linear Floating-Gate CMOS Resistor Using Common-Mode Linearization Technique |
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