Atomic scale defects in 4H SiC/SiO2 using electron spin resonance

In this study we report on ESR results on silicon carbide blanket wafers. The samples studied had p-type 4H-SiC substrates with a resistivity of 1000 ohm-cm. The SiC wafers had a 5mum epitaxially grown surface layer which was doped with Al to 5e15 cm -3 . The oxide (about 500Aring thick) was grown u...

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Hauptverfasser:	Rape, A., Lenahan, P.M., Lelis, A.J.
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Sprache:	eng
Schlagworte:	Educational institutions Electron traps Magnetic fields Magnetic resonance Metal-insulator structures Paramagnetic materials Paramagnetic resonance Physics Silicon carbide
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creator	Rape, A. Lenahan, P.M. Lelis, A.J.
description	In this study we report on ESR results on silicon carbide blanket wafers. The samples studied had p-type 4H-SiC substrates with a resistivity of 1000 ohm-cm. The SiC wafers had a 5mum epitaxially grown surface layer which was doped with Al to 5e15 cm -3 . The oxide (about 500Aring thick) was grown using Cree's standard dry-wet process with a NO post-oxidation anneal.
doi_str_mv	10.1109/ISDRS.2007.4422484
format	Conference Proceeding
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The samples studied had p-type 4H-SiC substrates with a resistivity of 1000 ohm-cm. The SiC wafers had a 5mum epitaxially grown surface layer which was doped with Al to 5e15 cm -3 . The oxide (about 500Aring thick) was grown using Cree's standard dry-wet process with a NO post-oxidation anneal.</abstract><pub>IEEE</pub><doi>10.1109/ISDRS.2007.4422484</doi><tpages>2</tpages></addata></record>
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identifier	ISBN: 9781424418916
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source	IEEE Electronic Library (IEL) Conference Proceedings
subjects	Educational institutions Electron traps Magnetic fields Magnetic resonance Metal-insulator structures Paramagnetic materials Paramagnetic resonance Physics Silicon carbide
title	Atomic scale defects in 4H SiC/SiO2 using electron spin resonance
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