Atomic scale defects in 4H SiC/SiO2 using electron spin resonance

Atomic scale defects in 4H SiC/SiO2 using electron spin resonance

In this study we report on ESR results on silicon carbide blanket wafers. The samples studied had p-type 4H-SiC substrates with a resistivity of 1000 ohm-cm. The SiC wafers had a 5mum epitaxially grown surface layer which was doped with Al to 5e15 cm -3 . The oxide (about 500Aring thick) was grown u...

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Bibliographische Detailangaben
Hauptverfasser: Rape, A., Lenahan, P.M., Lelis, A.J.
Format: Tagungsbericht
Sprache:eng
Schlagworte:
Educational institutions
Electron traps
Magnetic fields
Magnetic resonance
Metal-insulator structures
Paramagnetic materials
Paramagnetic resonance
Physics
Silicon carbide
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Beschreibung
Zusammenfassung:In this study we report on ESR results on silicon carbide blanket wafers. The samples studied had p-type 4H-SiC substrates with a resistivity of 1000 ohm-cm. The SiC wafers had a 5mum epitaxially grown surface layer which was doped with Al to 5e15 cm -3 . The oxide (about 500Aring thick) was grown using Cree's standard dry-wet process with a NO post-oxidation anneal.
DOI:10.1109/ISDRS.2007.4422484