610 GHz InAlAs/In0.75GaAs Metamorphic HEMTs with an Ultra-Short 15-nm-Gate

Ultra-short-gate InAlAs/InGaAs high electron mobility transistors (HEMTs) have been successfully fabricated with nano-gate fabrication technology and epitaxial optimization. We obtained an extrinsic maximum transconductance (G m,max ) of 1.65 S/mm and a current gain cutoff frequency (f T ) of 610 GH...

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Bibliographische Detailangaben

Hauptverfasser:	Seong-Jin Yeon, Myonghwan Park, JeHyuk Choi, Kwangseok Seo
Format:	Tagungsbericht
Sprache:	eng
Schlagworte:	Cutoff frequency Fabrication Gallium arsenide HEMTs Indium compounds Indium gallium arsenide mHEMTs MODFETs Substrates Transconductance
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