Record RF performance of 45-nm SOI CMOS Technology

We report record RF performance in 45-nm silicon-on- insulator (SOI) CMOS technology. RF performance scaling with channel length and layout optimization is demonstrated. Peak f T 's of 485 GHz and 345 GHz are measured in floating- body NFET and PFET with nearby wiring parasitics (i.e., gate- to...

Ausführliche Beschreibung

Bibliographische Detailangaben

Hauptverfasser:	Sungjae Lee, Jagannathan, B., Narasimha, S., Chou, A., Zamdmer, N., Johnson, J., Williams, R., Wagner, L., Jonghae Kim, Plouchart, J.-O., Pekarik, J., Springer, S., Freeman, G.
Format:	Tagungsbericht
Sprache:	eng
Schlagworte:	Capacitance measurement CMOS technology FETs Insulation Leakage current Length measurement Parasitic capacitance Radio frequency Silicon on insulator technology Wiring
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