Threshold voltage modeling of deep-submicron double-gate fully-depleted SOI MOSFET

In this paper, the threshold voltage model using a quasi -2D approximation for deep submicron double-gate fully-depleted SOI PMOS devices was described by solving basic semiconductor physical equations. Taking into consideration the distribution of minority carriers in the silicon film, the analytic...

Ausführliche Beschreibung

Bibliographische Detailangaben

Hauptverfasser:	Zhang Zhengfan, Fang Jian, Li Ruzhang, Zhang Zhengyuan, Li Zhaoji
Format:	Tagungsbericht
Sprache:	eng
Schlagworte:	Analytical models Circuit simulation Equations Integrated circuit modeling Medical simulation MOS devices MOSFET circuits Semiconductor films Silicon Threshold voltage
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