Integration of CMP Modeling in RC Extraction and Timing Flow

As technology scaling progresses into 65 nm and below nodes, on chip variation (OCV) specifically interconnect thickness variation due to chemical mechanical polishing (CMP) becomes relatively larger, as such it needs to be taken into consideration in the post layout RC extraction and timing flow. T...

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Bibliographische Detailangaben

Hauptverfasser:	Hongmei Liao, Li Song, Jakatdar, N., Radojcic, R.
Format:	Tagungsbericht
Sprache:	eng
Schlagworte:	Capacitance Chemical technology Differential equations Libraries Lithography Manufacturing processes Polynomials Process design Timing Topology
Online-Zugang:	Volltext bestellen
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