High performance K-band MEMS switches
This paper presents a comparison of the design, construction, and performance of broadband RF MEMS switches operating in the K-band from DC to 26.5 GHz and DC to 35 GHz. Both devices exploit proven elements from previous DC - 7 GHz SPDT MEMS switch designs. Two different switch configurations have b...
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creator | McKillop, J.S. Goins, D.A. |
description | This paper presents a comparison of the design, construction, and performance of broadband RF MEMS switches operating in the K-band from DC to 26.5 GHz and DC to 35 GHz. Both devices exploit proven elements from previous DC - 7 GHz SPDT MEMS switch designs. Two different switch configurations have been investigated to address RF resonance deficiencies, including one with a modified switch contact structure. Prototype samples of the both switch structures have demonstrated outstanding electrical performance, from DC to 26.5 GHz and from DC to 35 GHz, with less than 0.4 dB insertion loss, more than 20 dB return loss, and 20 dB isolation (all at 20 GHz). |
doi_str_mv | 10.1109/EUMC.2007.4405423 |
format | Conference Proceeding |
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Both devices exploit proven elements from previous DC - 7 GHz SPDT MEMS switch designs. Two different switch configurations have been investigated to address RF resonance deficiencies, including one with a modified switch contact structure. Prototype samples of the both switch structures have demonstrated outstanding electrical performance, from DC to 26.5 GHz and from DC to 35 GHz, with less than 0.4 dB insertion loss, more than 20 dB return loss, and 20 dB isolation (all at 20 GHz).</description><identifier>ISBN: 9782874870019</identifier><identifier>ISBN: 2874870013</identifier><identifier>DOI: 10.1109/EUMC.2007.4405423</identifier><language>eng</language><publisher>IEEE</publisher><subject>Contacts ; Insertion loss ; K-band ; MEMS Switches ; Microswitches ; ohmic contacts ; Performance loss ; phase shifters ; Prototypes ; Radio frequency ; Radiofrequency microelectromechanical systems ; Resonance ; Switches ; tunable filters</subject><ispartof>2007 European Microwave Conference, 2007, p.1233-1236</ispartof><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://ieeexplore.ieee.org/document/4405423$$EHTML$$P50$$Gieee$$H</linktohtml><link.rule.ids>309,310,780,784,789,790,2058,27925,54920</link.rule.ids><linktorsrc>$$Uhttps://ieeexplore.ieee.org/document/4405423$$EView_record_in_IEEE$$FView_record_in_$$GIEEE</linktorsrc></links><search><creatorcontrib>McKillop, J.S.</creatorcontrib><creatorcontrib>Goins, D.A.</creatorcontrib><title>High performance K-band MEMS switches</title><title>2007 European Microwave Conference</title><addtitle>EUMC</addtitle><description>This paper presents a comparison of the design, construction, and performance of broadband RF MEMS switches operating in the K-band from DC to 26.5 GHz and DC to 35 GHz. Both devices exploit proven elements from previous DC - 7 GHz SPDT MEMS switch designs. Two different switch configurations have been investigated to address RF resonance deficiencies, including one with a modified switch contact structure. Prototype samples of the both switch structures have demonstrated outstanding electrical performance, from DC to 26.5 GHz and from DC to 35 GHz, with less than 0.4 dB insertion loss, more than 20 dB return loss, and 20 dB isolation (all at 20 GHz).</description><subject>Contacts</subject><subject>Insertion loss</subject><subject>K-band</subject><subject>MEMS Switches</subject><subject>Microswitches</subject><subject>ohmic contacts</subject><subject>Performance loss</subject><subject>phase shifters</subject><subject>Prototypes</subject><subject>Radio frequency</subject><subject>Radiofrequency microelectromechanical systems</subject><subject>Resonance</subject><subject>Switches</subject><subject>tunable filters</subject><isbn>9782874870019</isbn><isbn>2874870013</isbn><fulltext>true</fulltext><rsrctype>conference_proceeding</rsrctype><creationdate>2007</creationdate><recordtype>conference_proceeding</recordtype><sourceid>6IE</sourceid><sourceid>RIE</sourceid><recordid>eNotj81Kw0AURgdEUGoeQNxk4zLxzv_MUkK0YoOLtutyM3PHjthaMgXx7a3Y1XdWh_Mxdsuh5Rz8Q78eulYA2FYp0ErIC1Z564SzylkA7q9YVcoH_KEx3vlrdj_P79v6QFP6mna4D1S_NiPuYz30w7Iu3_kYtlRu2GXCz0LVeWds_dSvunmzeHt-6R4XTeZWHxuDSqNKIyehEY1PnquYnLXqFJBwBB9MJHnq0VwKIzkZoCQCRqcwhShn7O7fm4loc5jyDqefzfmM_AWcMj3L</recordid><startdate>200710</startdate><enddate>200710</enddate><creator>McKillop, J.S.</creator><creator>Goins, D.A.</creator><general>IEEE</general><scope>6IE</scope><scope>6IL</scope><scope>CBEJK</scope><scope>RIE</scope><scope>RIL</scope></search><sort><creationdate>200710</creationdate><title>High performance K-band MEMS switches</title><author>McKillop, J.S. ; Goins, D.A.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-i175t-6a45a4fb1e25aa69f914df8774748fab09c6de32875132631e60ef2cad84afcd3</frbrgroupid><rsrctype>conference_proceedings</rsrctype><prefilter>conference_proceedings</prefilter><language>eng</language><creationdate>2007</creationdate><topic>Contacts</topic><topic>Insertion loss</topic><topic>K-band</topic><topic>MEMS Switches</topic><topic>Microswitches</topic><topic>ohmic contacts</topic><topic>Performance loss</topic><topic>phase shifters</topic><topic>Prototypes</topic><topic>Radio frequency</topic><topic>Radiofrequency microelectromechanical systems</topic><topic>Resonance</topic><topic>Switches</topic><topic>tunable filters</topic><toplevel>online_resources</toplevel><creatorcontrib>McKillop, J.S.</creatorcontrib><creatorcontrib>Goins, D.A.</creatorcontrib><collection>IEEE Electronic Library (IEL) Conference Proceedings</collection><collection>IEEE Proceedings Order Plan All Online (POP All Online) 1998-present by volume</collection><collection>IEEE Xplore All Conference Proceedings</collection><collection>IEEE Electronic Library (IEL)</collection><collection>IEEE Proceedings Order Plans (POP All) 1998-Present</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>McKillop, J.S.</au><au>Goins, D.A.</au><format>book</format><genre>proceeding</genre><ristype>CONF</ristype><atitle>High performance K-band MEMS switches</atitle><btitle>2007 European Microwave Conference</btitle><stitle>EUMC</stitle><date>2007-10</date><risdate>2007</risdate><spage>1233</spage><epage>1236</epage><pages>1233-1236</pages><isbn>9782874870019</isbn><isbn>2874870013</isbn><abstract>This paper presents a comparison of the design, construction, and performance of broadband RF MEMS switches operating in the K-band from DC to 26.5 GHz and DC to 35 GHz. Both devices exploit proven elements from previous DC - 7 GHz SPDT MEMS switch designs. Two different switch configurations have been investigated to address RF resonance deficiencies, including one with a modified switch contact structure. Prototype samples of the both switch structures have demonstrated outstanding electrical performance, from DC to 26.5 GHz and from DC to 35 GHz, with less than 0.4 dB insertion loss, more than 20 dB return loss, and 20 dB isolation (all at 20 GHz).</abstract><pub>IEEE</pub><doi>10.1109/EUMC.2007.4405423</doi><tpages>4</tpages></addata></record> |
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subjects | Contacts Insertion loss K-band MEMS Switches Microswitches ohmic contacts Performance loss phase shifters Prototypes Radio frequency Radiofrequency microelectromechanical systems Resonance Switches tunable filters |
title | High performance K-band MEMS switches |
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