GaN HEMT Based Doherty Amplifier for 3.5-GHz WiMAX Applications

We have implemented a Doherty amplifier for 3.5-GHz World Interoperability for Microwave Access (WiMAX) applications using Eudyna 90-W (P 3dB ) Gallium-Nitride (GaN) High Electron Mobility Transistor (HEMT) because of the poor efficiency of a standard class AB amplifier when the linearity performanc...

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Bibliographische Detailangaben

Hauptverfasser:	Junghwan Moon, Jangheon Kim, Ildu Kim, Young Yun Woo, Sungchul Hong, Han Seok Kim, Jong Sung Lee, Bumman Kim
Format:	Tagungsbericht
Sprache:	eng
Schlagworte:	Gallium nitride HEMTs Linearity Microwave amplifiers Microwave devices MODFETs Power amplifiers Power generation Power measurement WiMAX
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