GaN HEMT Based Doherty Amplifier for 3.5-GHz WiMAX Applications

We have implemented a Doherty amplifier for 3.5-GHz World Interoperability for Microwave Access (WiMAX) applications using Eudyna 90-W (P 3dB ) Gallium-Nitride (GaN) High Electron Mobility Transistor (HEMT) because of the poor efficiency of a standard class AB amplifier when the linearity performanc...

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Hauptverfasser:	Junghwan Moon, Jangheon Kim, Ildu Kim, Young Yun Woo, Sungchul Hong, Han Seok Kim, Jong Sung Lee, Bumman Kim
Format:	Tagungsbericht
Sprache:	eng
Schlagworte:	Gallium nitride HEMTs Linearity Microwave amplifiers Microwave devices MODFETs Power amplifiers Power generation Power measurement WiMAX
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creator	Junghwan Moon Jangheon Kim Ildu Kim Young Yun Woo Sungchul Hong Han Seok Kim Jong Sung Lee Bumman Kim
description	We have implemented a Doherty amplifier for 3.5-GHz World Interoperability for Microwave Access (WiMAX) applications using Eudyna 90-W (P 3dB ) Gallium-Nitride (GaN) High Electron Mobility Transistor (HEMT) because of the poor efficiency of a standard class AB amplifier when the linearity performance is good. The load modulation performance of the GaN HEMT device for the Doherty operation is rather moderate but workable. The linearity is improved using the in-band error cancellation technique of the Doherty amplifier. The implemented Doherty amplifier has been designed at an average output power of 43 dBm, backed-off about 8 dB from the 51 dBm (P 3dB ). For WiMAX signal with 28 MHz signal bandwidth, the measured drain efficiency of the amplifier is 27.8%, and the measured Relative Constellation Error (RCE) is -33.17 dB, while those of the comparable class AB amplifier are 19.42% and -24.26 dB, respectively, at the same average output power level.
doi_str_mv	10.1109/ECWT.2007.4404030
format	Conference Proceeding
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The load modulation performance of the GaN HEMT device for the Doherty operation is rather moderate but workable. The linearity is improved using the in-band error cancellation technique of the Doherty amplifier. The implemented Doherty amplifier has been designed at an average output power of 43 dBm, backed-off about 8 dB from the 51 dBm (P 3dB ). For WiMAX signal with 28 MHz signal bandwidth, the measured drain efficiency of the amplifier is 27.8%, and the measured Relative Constellation Error (RCE) is -33.17 dB, while those of the comparable class AB amplifier are 19.42% and -24.26 dB, respectively, at the same average output power level.</description><identifier>ISBN: 287487003X</identifier><identifier>ISBN: 9782874870033</identifier><identifier>DOI: 10.1109/ECWT.2007.4404030</identifier><language>eng</language><publisher>IEEE</publisher><subject>Gallium nitride ; HEMTs ; Linearity ; Microwave amplifiers ; Microwave devices ; MODFETs ; Power amplifiers ; Power generation ; Power measurement ; WiMAX</subject><ispartof>2007 European Conference on Wireless Technologies, 2007, p.395-398</ispartof><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://ieeexplore.ieee.org/document/4404030$$EHTML$$P50$$Gieee$$H</linktohtml><link.rule.ids>309,310,780,784,789,790,2058,27925,54920</link.rule.ids><linktorsrc>$$Uhttps://ieeexplore.ieee.org/document/4404030$$EView_record_in_IEEE$$FView_record_in_$$GIEEE</linktorsrc></links><search><creatorcontrib>Junghwan Moon</creatorcontrib><creatorcontrib>Jangheon Kim</creatorcontrib><creatorcontrib>Ildu Kim</creatorcontrib><creatorcontrib>Young Yun Woo</creatorcontrib><creatorcontrib>Sungchul Hong</creatorcontrib><creatorcontrib>Han Seok Kim</creatorcontrib><creatorcontrib>Jong Sung Lee</creatorcontrib><creatorcontrib>Bumman Kim</creatorcontrib><title>GaN HEMT Based Doherty Amplifier for 3.5-GHz WiMAX Applications</title><title>2007 European Conference on Wireless Technologies</title><addtitle>ECWT</addtitle><description>We have implemented a Doherty amplifier for 3.5-GHz World Interoperability for Microwave Access (WiMAX) applications using Eudyna 90-W (P 3dB ) Gallium-Nitride (GaN) High Electron Mobility Transistor (HEMT) because of the poor efficiency of a standard class AB amplifier when the linearity performance is good. The load modulation performance of the GaN HEMT device for the Doherty operation is rather moderate but workable. The linearity is improved using the in-band error cancellation technique of the Doherty amplifier. The implemented Doherty amplifier has been designed at an average output power of 43 dBm, backed-off about 8 dB from the 51 dBm (P 3dB ). For WiMAX signal with 28 MHz signal bandwidth, the measured drain efficiency of the amplifier is 27.8%, and the measured Relative Constellation Error (RCE) is -33.17 dB, while those of the comparable class AB amplifier are 19.42% and -24.26 dB, respectively, at the same average output power level.</description><subject>Gallium nitride</subject><subject>HEMTs</subject><subject>Linearity</subject><subject>Microwave amplifiers</subject><subject>Microwave devices</subject><subject>MODFETs</subject><subject>Power amplifiers</subject><subject>Power generation</subject><subject>Power measurement</subject><subject>WiMAX</subject><isbn>287487003X</isbn><isbn>9782874870033</isbn><fulltext>true</fulltext><rsrctype>conference_proceeding</rsrctype><creationdate>2007</creationdate><recordtype>conference_proceeding</recordtype><sourceid>6IE</sourceid><sourceid>RIE</sourceid><recordid>eNp9jr0OgjAYAJsYE_94AOPyvQD1g4LAZBARFpxIYCONllgDQloWfHoZmL3lhluOkL2F1LIwOMZRkVMb0aOOgw4yXJCN7XuO7yGyckUMrd84wYJT4Ltrck74HdI4y-HCtXjCtXsJNYwQtn0jaykU1J0CRl0zSb9QyCwsIeyn9uCD7D56R5Y1b7QwZm_J4RbnUWpKIUTVK9lyNVbzC_tff2foNfE</recordid><startdate>200710</startdate><enddate>200710</enddate><creator>Junghwan Moon</creator><creator>Jangheon Kim</creator><creator>Ildu Kim</creator><creator>Young Yun Woo</creator><creator>Sungchul Hong</creator><creator>Han Seok Kim</creator><creator>Jong Sung Lee</creator><creator>Bumman Kim</creator><general>IEEE</general><scope>6IE</scope><scope>6IL</scope><scope>CBEJK</scope><scope>RIE</scope><scope>RIL</scope></search><sort><creationdate>200710</creationdate><title>GaN HEMT Based Doherty Amplifier for 3.5-GHz WiMAX Applications</title><author>Junghwan Moon ; Jangheon Kim ; Ildu Kim ; Young Yun Woo ; Sungchul Hong ; Han Seok Kim ; Jong Sung Lee ; Bumman Kim</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-ieee_primary_44040303</frbrgroupid><rsrctype>conference_proceedings</rsrctype><prefilter>conference_proceedings</prefilter><language>eng</language><creationdate>2007</creationdate><topic>Gallium nitride</topic><topic>HEMTs</topic><topic>Linearity</topic><topic>Microwave amplifiers</topic><topic>Microwave devices</topic><topic>MODFETs</topic><topic>Power amplifiers</topic><topic>Power generation</topic><topic>Power measurement</topic><topic>WiMAX</topic><toplevel>online_resources</toplevel><creatorcontrib>Junghwan Moon</creatorcontrib><creatorcontrib>Jangheon Kim</creatorcontrib><creatorcontrib>Ildu Kim</creatorcontrib><creatorcontrib>Young Yun Woo</creatorcontrib><creatorcontrib>Sungchul Hong</creatorcontrib><creatorcontrib>Han Seok Kim</creatorcontrib><creatorcontrib>Jong Sung Lee</creatorcontrib><creatorcontrib>Bumman Kim</creatorcontrib><collection>IEEE Electronic Library (IEL) Conference Proceedings</collection><collection>IEEE Proceedings Order Plan All Online (POP All Online) 1998-present by volume</collection><collection>IEEE Xplore All Conference Proceedings</collection><collection>IEEE Electronic Library (IEL)</collection><collection>IEEE Proceedings Order Plans (POP All) 1998-Present</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Junghwan Moon</au><au>Jangheon Kim</au><au>Ildu Kim</au><au>Young Yun Woo</au><au>Sungchul Hong</au><au>Han Seok Kim</au><au>Jong Sung Lee</au><au>Bumman Kim</au><format>book</format><genre>proceeding</genre><ristype>CONF</ristype><atitle>GaN HEMT Based Doherty Amplifier for 3.5-GHz WiMAX Applications</atitle><btitle>2007 European Conference on Wireless Technologies</btitle><stitle>ECWT</stitle><date>2007-10</date><risdate>2007</risdate><spage>395</spage><epage>398</epage><pages>395-398</pages><isbn>287487003X</isbn><isbn>9782874870033</isbn><abstract>We have implemented a Doherty amplifier for 3.5-GHz World Interoperability for Microwave Access (WiMAX) applications using Eudyna 90-W (P 3dB ) Gallium-Nitride (GaN) High Electron Mobility Transistor (HEMT) because of the poor efficiency of a standard class AB amplifier when the linearity performance is good. The load modulation performance of the GaN HEMT device for the Doherty operation is rather moderate but workable. The linearity is improved using the in-band error cancellation technique of the Doherty amplifier. The implemented Doherty amplifier has been designed at an average output power of 43 dBm, backed-off about 8 dB from the 51 dBm (P 3dB ). For WiMAX signal with 28 MHz signal bandwidth, the measured drain efficiency of the amplifier is 27.8%, and the measured Relative Constellation Error (RCE) is -33.17 dB, while those of the comparable class AB amplifier are 19.42% and -24.26 dB, respectively, at the same average output power level.</abstract><pub>IEEE</pub><doi>10.1109/ECWT.2007.4404030</doi></addata></record>
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identifier	ISBN: 287487003X
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source	IEEE Electronic Library (IEL) Conference Proceedings
subjects	Gallium nitride HEMTs Linearity Microwave amplifiers Microwave devices MODFETs Power amplifiers Power generation Power measurement WiMAX
title	GaN HEMT Based Doherty Amplifier for 3.5-GHz WiMAX Applications
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