Tunable diode protection for GMR and TMR sensors
TMR and GMR sensors used today are highly susceptible to ESD damage with failure voltages as low as 0.5 V. Diode protection using a single diode connected in parallel with the sensor does not work for many advanced MR sensors due to the fact that the voltage at which diodes begin conducting signific...
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| creator | Iben, I.E.T. Czarnecki, S. Herget, P. |
| description | TMR and GMR sensors used today are highly susceptible to ESD damage with failure voltages as low as 0.5 V. Diode protection using a single diode connected in parallel with the sensor does not work for many advanced MR sensors due to the fact that the voltage at which diodes begin conducting significant current exceeds the damage voltage of many advanced MR sensors. This is due to limitations of the band gaps of the diode materials (Si and Ge) and the resistance of the diodes while conducting. Here we report several novel diode protection circuits which enable protecting the most sensitive devices while tuning the circuits to the electrical characteristics of the particular sensor being used. |
| doi_str_mv | 10.1109/EOSESD.2007.4401741 |
| format | Conference Proceeding |
| fullrecord | <record><control><sourceid>ieee_6IE</sourceid><recordid>TN_cdi_ieee_primary_4401741</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><ieee_id>4401741</ieee_id><sourcerecordid>4401741</sourcerecordid><originalsourceid>FETCH-LOGICAL-i90t-5461af6f32ed149b62066c3af7cd2b593640a355c0fd291eca58f2e0999f98113</originalsourceid><addsrcrecordid>eNotj8tKw0AUQAdEUGq-oJv5gcR755XcpdRYhZaCzb5MMncgUpMyExf-vQV7Nmd34AixRqgQgZ7bw7E9vlYKoK6MAawN3omC6gZtY3WN2tkHUeT8BVc0adPQo4DuZ_L9mWUY58DykuaFh2WcJxnnJLf7T-mnILurM095TvlJ3Ed_zlzcvBLdW9tt3svdYfuxedmVI8FSWuPQRxe14oCGeqfAuUH7WA9B9Za0M-C1tQPEoAh58LaJioGIIjWIeiXW_9mRmU-XNH779Hu6bek_J5JBiA</addsrcrecordid><sourcetype>Publisher</sourcetype><iscdi>true</iscdi><recordtype>conference_proceeding</recordtype></control><display><type>conference_proceeding</type><title>Tunable diode protection for GMR and TMR sensors</title><source>IEEE Electronic Library (IEL) Conference Proceedings</source><creator>Iben, I.E.T. ; Czarnecki, S. ; Herget, P.</creator><creatorcontrib>Iben, I.E.T. ; Czarnecki, S. ; Herget, P.</creatorcontrib><description>TMR and GMR sensors used today are highly susceptible to ESD damage with failure voltages as low as 0.5 V. Diode protection using a single diode connected in parallel with the sensor does not work for many advanced MR sensors due to the fact that the voltage at which diodes begin conducting significant current exceeds the damage voltage of many advanced MR sensors. This is due to limitations of the band gaps of the diode materials (Si and Ge) and the resistance of the diodes while conducting. Here we report several novel diode protection circuits which enable protecting the most sensitive devices while tuning the circuits to the electrical characteristics of the particular sensor being used.</description><identifier>ISBN: 9781585371365</identifier><identifier>ISBN: 158537136X</identifier><identifier>DOI: 10.1109/EOSESD.2007.4401741</identifier><language>eng</language><publisher>IEEE</publisher><subject>Circuit optimization ; Conducting materials ; Diodes ; Electric resistance ; Electrostatic discharge ; Low voltage ; Photonic band gap ; Protection ; Sensor phenomena and characterization ; Tunable circuits and devices</subject><ispartof>2007 29th Electrical Overstress/Electrostatic Discharge Symposium (EOS/ESD), 2007, p.2B.3-1-2B.3-9</ispartof><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://ieeexplore.ieee.org/document/4401741$$EHTML$$P50$$Gieee$$H</linktohtml><link.rule.ids>309,310,780,784,789,790,2058,27925,54920</link.rule.ids><linktorsrc>$$Uhttps://ieeexplore.ieee.org/document/4401741$$EView_record_in_IEEE$$FView_record_in_$$GIEEE</linktorsrc></links><search><creatorcontrib>Iben, I.E.T.</creatorcontrib><creatorcontrib>Czarnecki, S.</creatorcontrib><creatorcontrib>Herget, P.</creatorcontrib><title>Tunable diode protection for GMR and TMR sensors</title><title>2007 29th Electrical Overstress/Electrostatic Discharge Symposium (EOS/ESD)</title><addtitle>EOSESD</addtitle><description>TMR and GMR sensors used today are highly susceptible to ESD damage with failure voltages as low as 0.5 V. Diode protection using a single diode connected in parallel with the sensor does not work for many advanced MR sensors due to the fact that the voltage at which diodes begin conducting significant current exceeds the damage voltage of many advanced MR sensors. This is due to limitations of the band gaps of the diode materials (Si and Ge) and the resistance of the diodes while conducting. Here we report several novel diode protection circuits which enable protecting the most sensitive devices while tuning the circuits to the electrical characteristics of the particular sensor being used.</description><subject>Circuit optimization</subject><subject>Conducting materials</subject><subject>Diodes</subject><subject>Electric resistance</subject><subject>Electrostatic discharge</subject><subject>Low voltage</subject><subject>Photonic band gap</subject><subject>Protection</subject><subject>Sensor phenomena and characterization</subject><subject>Tunable circuits and devices</subject><isbn>9781585371365</isbn><isbn>158537136X</isbn><fulltext>true</fulltext><rsrctype>conference_proceeding</rsrctype><creationdate>2007</creationdate><recordtype>conference_proceeding</recordtype><sourceid>6IE</sourceid><sourceid>RIE</sourceid><recordid>eNotj8tKw0AUQAdEUGq-oJv5gcR755XcpdRYhZaCzb5MMncgUpMyExf-vQV7Nmd34AixRqgQgZ7bw7E9vlYKoK6MAawN3omC6gZtY3WN2tkHUeT8BVc0adPQo4DuZ_L9mWUY58DykuaFh2WcJxnnJLf7T-mnILurM095TvlJ3Ed_zlzcvBLdW9tt3svdYfuxedmVI8FSWuPQRxe14oCGeqfAuUH7WA9B9Za0M-C1tQPEoAh58LaJioGIIjWIeiXW_9mRmU-XNH779Hu6bek_J5JBiA</recordid><startdate>200709</startdate><enddate>200709</enddate><creator>Iben, I.E.T.</creator><creator>Czarnecki, S.</creator><creator>Herget, P.</creator><general>IEEE</general><scope>6IE</scope><scope>6IL</scope><scope>CBEJK</scope><scope>RIE</scope><scope>RIL</scope></search><sort><creationdate>200709</creationdate><title>Tunable diode protection for GMR and TMR sensors</title><author>Iben, I.E.T. ; Czarnecki, S. ; Herget, P.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-i90t-5461af6f32ed149b62066c3af7cd2b593640a355c0fd291eca58f2e0999f98113</frbrgroupid><rsrctype>conference_proceedings</rsrctype><prefilter>conference_proceedings</prefilter><language>eng</language><creationdate>2007</creationdate><topic>Circuit optimization</topic><topic>Conducting materials</topic><topic>Diodes</topic><topic>Electric resistance</topic><topic>Electrostatic discharge</topic><topic>Low voltage</topic><topic>Photonic band gap</topic><topic>Protection</topic><topic>Sensor phenomena and characterization</topic><topic>Tunable circuits and devices</topic><toplevel>online_resources</toplevel><creatorcontrib>Iben, I.E.T.</creatorcontrib><creatorcontrib>Czarnecki, S.</creatorcontrib><creatorcontrib>Herget, P.</creatorcontrib><collection>IEEE Electronic Library (IEL) Conference Proceedings</collection><collection>IEEE Proceedings Order Plan All Online (POP All Online) 1998-present by volume</collection><collection>IEEE Xplore All Conference Proceedings</collection><collection>IEEE Electronic Library (IEL)</collection><collection>IEEE Proceedings Order Plans (POP All) 1998-Present</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Iben, I.E.T.</au><au>Czarnecki, S.</au><au>Herget, P.</au><format>book</format><genre>proceeding</genre><ristype>CONF</ristype><atitle>Tunable diode protection for GMR and TMR sensors</atitle><btitle>2007 29th Electrical Overstress/Electrostatic Discharge Symposium (EOS/ESD)</btitle><stitle>EOSESD</stitle><date>2007-09</date><risdate>2007</risdate><spage>2B.3-1</spage><epage>2B.3-9</epage><pages>2B.3-1-2B.3-9</pages><isbn>9781585371365</isbn><isbn>158537136X</isbn><abstract>TMR and GMR sensors used today are highly susceptible to ESD damage with failure voltages as low as 0.5 V. Diode protection using a single diode connected in parallel with the sensor does not work for many advanced MR sensors due to the fact that the voltage at which diodes begin conducting significant current exceeds the damage voltage of many advanced MR sensors. This is due to limitations of the band gaps of the diode materials (Si and Ge) and the resistance of the diodes while conducting. Here we report several novel diode protection circuits which enable protecting the most sensitive devices while tuning the circuits to the electrical characteristics of the particular sensor being used.</abstract><pub>IEEE</pub><doi>10.1109/EOSESD.2007.4401741</doi></addata></record> |
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| ispartof | 2007 29th Electrical Overstress/Electrostatic Discharge Symposium (EOS/ESD), 2007, p.2B.3-1-2B.3-9 |
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| language | eng |
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| source | IEEE Electronic Library (IEL) Conference Proceedings |
| subjects | Circuit optimization Conducting materials Diodes Electric resistance Electrostatic discharge Low voltage Photonic band gap Protection Sensor phenomena and characterization Tunable circuits and devices |
| title | Tunable diode protection for GMR and TMR sensors |
| url | https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2024-12-28T16%3A50%3A13IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-ieee_6IE&rft_val_fmt=info:ofi/fmt:kev:mtx:book&rft.genre=proceeding&rft.atitle=Tunable%20diode%20protection%20for%20GMR%20and%20TMR%20sensors&rft.btitle=2007%2029th%20Electrical%20Overstress/Electrostatic%20Discharge%20Symposium%20(EOS/ESD)&rft.au=Iben,%20I.E.T.&rft.date=2007-09&rft.spage=2B.3-1&rft.epage=2B.3-9&rft.pages=2B.3-1-2B.3-9&rft.isbn=9781585371365&rft.isbn_list=158537136X&rft_id=info:doi/10.1109/EOSESD.2007.4401741&rft_dat=%3Cieee_6IE%3E4401741%3C/ieee_6IE%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_id=info:pmid/&rft_ieee_id=4401741&rfr_iscdi=true |